Engineering topics
Publications and source records attributed to Liliental-Weber, Z..
Interfacial compositional disordering in InGaAs/GaAs quantom dots has been used to tune their intersublevel energy spaceings (delta E subscript [(i + 1) - i]).
The mechanism of the ohmic behavior commonly observed after annealing Au/n-GaAs 110-oriented Schottky diodes was investigated using electron-beam-induced current (EBIC) measurements, secondary electron imaging (SEI), and SEM and TEM observations. The results showed that the ohmic behavior of annealed Schottky diodes originates from a shunt current pathway at the diode periphery. The SEI, EBIC, and electrical measurements indicated that the ohmic leakage current is due to the surface recombinations at the exposed surface of GaAs between elongated Au crystallites.