Engineering topics

Lillington, D. R.

Publications and source records attributed to Lillington, D. R..

7 records

NASA NTRS1991

Progress toward the development of dual junction GaAs/Ge solar cells

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Lillington, D. R.↗

NASA NTRS1989

High efficiency GaAs-Ge tandem solar cells grown by MOCVD

High conversion efficiency and low weight are obviously desirable for solar cells intended for space applications. One promising structure is GaAs on Ge. The advantages of using Ge wafers as substrates include the following: they offer high efficiency by forming a two-junction tandem cell; low weight combined with superior strength allows usage of thin (3 mil) wafers; and they are a good substrate for GaAs, being lattice matched, thermal expansion matched, and available as large-area wafers.

Vernon, S. M.↗

NASA NTRS1989

Gallium Arsenide welded panel technology for advanced spaceflight applications

A significant impediment to the widespread use of GaAs solar cells in space is the cost and weight of the GaAs substrate. In order to overcome these problems, Spectrolab is pursuing thin cell technologies encompassing both liquid phase epitaxy (LPE) GaAs on GaAs and MOCVD GaAs on Ge cells. Spectrolab's experience in the manufacture of 4 to 6 mil 2 cm x 4 cm GaAs cells on a LPE production line is discussed. By thinning the cells at a late state of processing, production yields comparable to 12 mil cells have been achieved. Data are presented showing that GaAs cells can be welded without degradation and have achieved minimum average efficiencies of 18 percent AM0, 28 C with efficiencies up to 20 percent. Spectrolab, in conjunction with Spire Corporation has also been pursuing GaAs on Ge cell technology in support of larger area lighter weight power systems. Data are presented showing that individual 2 cm x 2 cm, 8 mil cell efficiencies up to 21.7 percent have been achieved. Efficiencies up to 24 percent AM0 will be possible by optimizing the GaAs/Ge interface. Cells have been welded without degradation using silver interconnects and have been laid down on an aluminum honeycomb/graphite facesheet substrate to produce a small coupon. The efficiency was 18.1 percent at AM0, 28 C.

Lillington, D. R.↗

NASA NTRS1988

High efficiency GaAs/Ge monolithic tandem solar cells

Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

Tobin, S. P.↗

NASA NTRS1988

Optimization of silicon 8 cm x 8 cm wrapthrough Space Station cells for 'on orbit' operation

The optimization of Space Station cells for on-orbit performance is described. Design trades were performed in which back DAR coating thickness was traded against thermal absorptance and performance under front and back (albedo) illumination. Typical examples of modeled cell performance under different scenarios are given. Experimental illuminated output data under back illumination for specific DAR coating thicknesses are also given. Computer modeling of the solar array using TRASYS and SINDA programs also provide on-orbit thermal data and performance predictions. The overall backside response from albedo illumination was found to make a considerable contribution to the total array performance, particularly during the early stages of space station assembly when the arrays are feathered.

Lillington, D. R.↗

NASA NTRS1987

Development of 8 cm x 8 cm silicon gridded back solar cell for space station

The 8-cm x 8-cm gridded back cell being developed for the space station photovoltaic array is described. Modeling studies show that the beginning of life power output of 1.039 W per cell may be met by several different configurations, the most promising being either a fielded or nonfielded 2 ohm-cm planar 8-mil cell. Experimental data are presented which show that a thermal alpha of 0.63 is achievable on a planar cell but at the expense of some Isc. Planar cells are found to possess short-circuit currents which are 9 percent lower than on textured cells due to the loss of near-IR radiation by transmission through the cell. Preliminary modeling shows that the efficiency of the textured cell exceeds the planar cell by approximately 9 percent at 25 C but the situation is reversed in orbit due to the high thermal alpha of textured cells (0.82). Experimental data show that the IR absorption in textured cells can be reduced by about 3 alpha points without loss of efficiency by controlling the doping concentration in the diffused layers, thus increasing the efficiency in orbit.

Lillington, D. R.↗

NASA NTRS1986

Further advances in silicon solar cell technology for space application

Recent improvements relating to the design of high efficiency cells are presented. A conceptual design using passivation techniques is discussed, which potentially increases the open circuit voltage to approximately 650 mV. This concept is supported by experimental data using only silicon passivation beneath contacts. The use of thin thermal oxides of silicon for passivation between contacts is also discussed. A number of novel structures have also been fabricated to investigate reduction in the thermal alpha of planar and sculptured cells. It is shown that this may be as low as 0.63 on glassed gridded back cells, and that the IR rejection beyond 1.1 microns may approach 100 percent if the backside is AR coated. Finally, experimental data is given to support the existence of free electron absorption in heavily doped emitters on sculptured cells.

Lillington, D. R.↗