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Lin, Qing

Publications and source records attributed to Lin, Qing.

Search for Solar Boosted Dark Matter Particles at the PandaX-4T Experiment

We present a novel constraint on light dark matter utilizing 1.54 metric ton/year of data acquired from the PandaX-4T dual-phase xenon time projection chamber. This constraint is derived through detecting electronic recoil signals resulting from the interaction with solar-enhanced dark matter flux. Low-mass dark matter particles, lighter than a few MeV / c 2 , can scatter with the thermal electrons in the Sun. Consequently, with higher kinetic energy, the boosted dark matter component becomes detectable via contact scattering with xenon electrons, resulting in a few keV energy deposition that exceeds the threshold of PandaX-4T. We calculate the expected recoil energy in PandaX-4T considering the Sun’s acceleration with heavy mediators and the detection capabilities of the xenon detector. The first experimental search results using the xenon detector yield the most stringent upper limits cross section of 3.51 × 10 − 39 cm 2 at 0.08 MeV / c 2 for a solar boosted dark matter mass ranging from 0.02 to 10 MeV / c 2 , achieving a 23-fold improvement compared with earlier experimental studies. Published by the American Physical Society 2025

Shen, Guofang↗

Electrically driven light emission from single quantum dots using pulsed MOS capacitors

Robust, nanoscale light-emitting devices are attractive for emerging photonic and quantum engineering applications. However, conventional approaches suffer from fabrication challenges or lack the potential to address individual nanostructures, such as quantum dots. In this paper, we present a device that can produce electrically driven light emission from a single quantum dot using a single carbon nanotube as the charge injection contact. Here, the device has a metal-oxide-semiconductor capacitor structure and operates based on an unconventional mechanism of electroluminescence, which relies on the use of bipolar voltage pulses. The proposed device can be fabricated in a simple manner using conventional lithographic processes, offering a scalable approach toward the development of optoelectronic devices at the single dot level.

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