Lin, Zhuonan | Search NASA

DOE OSTI2023

Linearized frequency domain Landau-Lifshitz-Gilbert equation formulation

We present a general finite element linearized Landau-Lifshitz-Gilbert equation (LLGE) solver for magnetic systems under weak time-harmonic excitation field. The linearized LLGE is obtained by assuming a small deviation around the equilibrium state of the magnetic system. Inserting such expansion into LLGE and keeping only first order terms gives the linearized LLGE, which gives a frequency domain solution for the complex magnetization amplitudes under an external time-harmonic applied field of a given frequency. We solve the linear system with an iterative solver using generalized minimal residual method. We construct a preconditioner matrix to effectively solve the linear system. The validity, effectiveness, speed, and scalability of the linear solver are demonstrated via numerical examples.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Switching current reduction in magnetoresistive random access memories

We present an approach for minimizing the critical current for the magnetization switching in magnetic tunnel junctions by optimizing the spatial distribution of the current density. We show that such a minimization is possible because critical current is determined by the condition of making one of the magnetization eigenstates grow in time. The excitation of the eigenstates is enhanced when the spatial distributions of the eigenstates and current density overlap. Critical current can be viewed as a functional of the current density spatial distribution and it can be minimized by optimizing this distribution. Such an optimization results in a major reduction of the critical current and increase of the switching efficiency, viz. the ratio between the energy barrier and critical current. The minimized critical current increases approximately linearly with the magnetic tunnel junction size, which is much slower than critical current for the case of a uniform current density. The optimized efficiency can be approximately a constant with respect to the magnetic tunnel junction size, which is much higher than the efficiency for the uniform current density. Additional optimization can be achieved by spatially modulating the material parameters, e.g., the saturation magnetization. The presented approach and obtained scaling of the critical current and efficiency offers opportunities for the magnetic tunnel junction optimization.

36 MATERIALS SCIENCE↗