Preparation and properties of nonheat-treated single crystal Cu2S-CdS heterojunctions.
Abstract missing.
Engineering topics
Publications and source records attributed to Lindquist, P. F..
Abstract missing.
The influence of trapped charge on the photovoltaic properties of an efficient Cu2S-CdS single-crystal heterojunction has been studied by a photocapacitance technique. For the nonheat-treated cell, a persistent increment in capacitance as high as 70% of the dark capacitance remained after illumination of the junction by band-gap light at 100 K. The additional capacitance is due to holes trapped in deep levels in the CdS depletion region near the interface. The trapped holes enhanced the 100 K photocurrent spectrum uniformly by a factor of 3 before heat treatment. After a 200 C heat treatment in air, the maximum trapped charge at 100 K enhanced the photocurrent by two orders of magnitude. The results are interpreted in terms of the tunneling through a conduction band spike of electrons photoexcited in the Cu2S.
Trapped charging and photovoltaic performance of Cu2S-CdS cell including heat treatment effects
Electronic transitions involved in photocapacitance at Cd2S-CdS heterojunction
Temperature effects on photocapacitance properties of photovoltaic cells
Photovoltaic effect in group 2-6 compounds
Current gain mechanism in copper sulfide-cadmium sulfide diode upon photoexcitation in presence of reverse bias