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Liu, Lingmei

Publications and source records attributed to Liu, Lingmei.

Formation of pyrophosphates across grain boundaries induces the formation of mismatched but oriented interfaces in silver phosphate polypods

The interfaces and their misfit defects determine the materials properties for a wide range of applications, such as electronic devices, photocatalysis, and mechanical engineering, etc. However, current understanding of atomic interfacial structures is limited. Here we discover a special interfacial structure, mismatched but oriented interface via two distinct facets. Transmission and scanning electron microscopy results suggest that, in Ag 3 PO 4 polypods structures, interfaces of {1 0 0} and {1 1 0}, ({1 0 0}/(1 1 0}), {1 0 0}/{1 1 1}, {1 1 0}/{1 1 1}, and {1 0 0}/{1 0 0}, etc., have a certain orientation relationship, corresponding to the energy minima and coincident site lattice of interfacial atoms as demonstrated by molecular dynamics simulations. Density functional theory demonstrates that the formation of pyrophosphate and/or phosphates rotation to bond across the interface compensate the lattice mismatch at the interfaces, as well as deformations of Ag-O bonds. Furthermore, our work opens up a new avenue for a much wider range of interfacial structures, allow for a higher diversity of structures, and shine light on tailoring crystal structures, morphologies, and the resulting properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (ε r ~ 22) amorphous native oxide Bi 2 SeO x on the 2D semiconducting Bi2O2Se using O 2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi 2 O 2 Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi 2 O 2 Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.

36 MATERIALS SCIENCE↗

Atomic‐Resolution Imaging of Halide Perovskites Using Electron Microscopy

Abstract Atomic‐resolution imaging of halide perovskites (HPs) using transmission electron microscopy (TEM) is challenging because of the sensitivity of their structures to the electron beam. In this article, recent achievements in this area are reviewed, covering both all‐inorganic and organic–inorganic hybrid HPs, with an emphasis on the specific imaging conditions that have proven to be effective in avoiding electron beam‐induced structural damage. The discussion focusses on the total electron dose that HPs can bear before being damaged and the effects of different imaging modes, accelerating voltages, and temperatures. The crucial role of a direct‐detection electron‐counting camera in reducing the required electron dose is outlined, which is indispensable for imaging extremely sensitive organic–inorganic hybrid perovskites. In addition to reviewing published works, the results of initial attempts to perform atomic‐resolution elemental mapping for an all‐inorganic HP and image a hybrid HP using scanning TEM are introduced. The preparation of a TEM specimen from macroscopic crystals or devices of HPs, which is very important for practical applications but has not yet received attention, is also discussed. This article aims to provide guidance on the acquisition of atomic‐resolution TEM images of HPs and inspire the development of more imaging technologies for sensitive materials.

Song, Kepeng↗