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Liu, Ren

Publications and source records attributed to Liu, Ren.

Considerations and recent advances in nanoscale interfaces with neuronal and cardiac networks

Nanoscale interfaces with biological tissue, principally made with nanowires (NWs), are envisioned as minimally destructive to the tissue and as scalable tools to directly transduce the electrochemical activity of a neuron at its finest resolution. This review lays the foundations for understanding the material and device considerations required to interrogate neuronal activity at the nanoscale. We first discuss the electrochemical nanoelectrode-neuron interfaces and then present new results concerning the electrochemical impedance and charge injection capacities of millimeter, micrometer, and nanometer scale wires with Pt, PEDOT:PSS, Si, Ti, ITO, IrO x , Ag, and AgCl materials. Using established circuit models for NW-neuron interfaces, we discuss the impact of having multiple NWs interfacing with a single neuron on the amplitude and temporal characteristics of the recorded potentials. We review state of the art advances in nanoelectrode-neuron interfaces, the standard control experiments to investigate their electrophysiological behavior, and present recent high fidelity recordings of intracellular potentials obtained with ultrasharp NWs developed in our laboratory that naturally permeate neuronal cell bodies. Recordings from arrays and individually addressable electrically shorted NWs are presented, and the long-term stability of intracellular recording is discussed and put in the context of established techniques. Finally, a perspective on future research directions and applications is presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ultra-Sharp Nanowire Arrays Natively Permeate, Record, and Stimulate Intracellular Activity in Neuronal and Cardiac Networks

Intracellular access with high spatiotemporal resolution can enhance the understanding of how neurons or cardiomyocytes regulate and orchestrate network activity and how this activity can be affected with pharmacology or other interventional modalities. Nanoscale devices often employ electroporation to transiently permeate the cell membrane and record intracellular potentials, which tend to decrease rapidly with time. Here, one reports innovative scalable, vertical, ultrasharp nanowire arrays that are individually addressable to enable long-term, native recordings of intracellular potentials. One reports electrophysiological recordings that are indicative of intracellular access from 3D tissue-like networks of neurons and cardiomyocytes across recording days and that do not decrease to extracellular amplitudes for the duration of the recording of several minutes. The findings are validated with cross-sectional microscopy, pharmacology, and electrical interventions. The experiments and simulations demonstrate that the individual electrical addressability of nanowires is necessary for high-fidelity intracellular electrophysiological recordings. This work advances the understanding of and control over high-quality multichannel intracellular recordings and paves the way toward predictive, high-throughput, and low-cost electrophysiological drug screening platforms.

36 MATERIALS SCIENCE↗

Low barrier height in a ZnO nanorods/NbSe 2 heterostructure prepared by van der Waals epitaxy

Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In this study, we revealed that charge transfer across a 2D/semiconductor heterointerface and materials characteristics besides work function should be accounted for in fabrication of electrodes based on 2D materials. Our density functional theory (DFT) calculations predicted that charge transfer between ZnO and NbSe 2 lowers the barrier height at the heterojunction and that conductive surface states of ZnO provide an additional conduction channel in the ZnO/NbSe 2 heterostructures. Crystalline ZnO/NbSe 2 heterostructures were prepared by the hydrothermal method. Electrical characterizations of the ZnO/NbSe 2 heterostructures showed Ohmic-like behavior as predicted by the DFT calculations, opposed to the prediction based on the Schottky–Mott model.

2D materials↗

Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates

A major challenge in gallium nitride (GaN) vertical power devices and other large bandgap materials is the high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the heterointerface where there are both lattice and thermal mismatches. In this paper, we report the selective area growth (SAG) of thick GaN on Si and on the newly available Qromis Substrate Technology™ (QST) substrates that lead to a significant reduction of the defect densities to a level that is nearly comparable to that on native substrates by defect annihilation. We performed a parametric study of the electrical properties of the SAG GaN layers by fabricating and characterizing Schottky barrier diodes for SAG GaN layer thicknesses of 5, 10, 15, and 20 μm for GaN-on-Si, GaN-on-QST, and GaN-on-GaN diodes. While thicker layers led to a significant reduction in defect densities and improvement in the diode forward current characteristics, the GaN-on-QST diodes exhibited nearly similar characteristics to the GaN-on-GaN diodes. Further improvement in the device structure and/or SAG growth for GaN-on-Si is needed to achieve a comparable performance as the defect densities in the GaN-on-Si are comparable to that of GaN-on-QST substrates.

36 MATERIALS SCIENCE↗

Surface Passivation and Carrier Collection in {110}, {100} and Circular Si Microwire Solar Cells

Surface recombination is a major bottleneck for realizing highly efficient micro/nanostructure solar cells. Parametric studies of the influence of Si microwire (SiMW) surface-facet orientation (rectangular with flat-facets, {110}, {100} and circular), with a fixed height of 10 µm, diameter (D = 1.5–9.5 µm), and sidewall spacing (S = 2.5–8.5 µm), and mesh-grid density (1–16 mm -2 ) on recombination and carrier collection in SiMW solar cells with radial p-n junctions are reported. An effective surface passivation layer composed of thin thermally grown silicon dioxide (SiO 2 ) and silicon nitride (SiN x ) layers is employed. For a fixed D of 1.5 µm, tight SiMW spacing results in improved short-circuit current density (J sc = 30.1 mA cm -2 ) and sparse arrays result in open-circuit voltages (V oc = 0.552 V) that are similar to those of control Si planar cells. For a fixed S, smaller D results in better light trapping at shorter wavelengths and higher J sc while larger D exhibits better light trapping at larger wavelengths and a higher V oc . With a mesh-grid electrode the power conversion efficiency increases to 15.3%. Finally, these results provide insights on the recombination mechanisms in SiMW solar cells and provide general design principles for optimizing their performance.

14 SOLAR ENERGY↗

Resilient Cyber Infrastructure for the Minimum Wind Curtailment Remedial Control Scheme

Integration of Distributed Energy Resources (DER) has been significantly increasing in the electric power grid. One of the predominant renewable energy sources, wind energy, possess a significant challenge for grid operations, due to its intermittency, uncertainty and variability. In changing operating conditions with wind uncertainty, part of wind may need to be curtailed for the safe utilization of the transmission system. In order to minimize the wind power curtailment and to keep the power flow on a transmission line under limits, a cyber resilient Distributed Remedial Action Scheme (DRAS) is developed in this paper. The RAS is formulated as an optimization problem, considering the real power flow constraints of the transmission lines and given wind variability. In this paper, DRAS is developed to operate even with failures in the computing nodes to make it cyber-resilient. Distributed simplex algorithm is used for optimization in the distributed RAS. The DRAS is implemented in a decentralized platform called Resilient Information Architecture Platform for Smart Grid (RIAPS) to enable cyber resiliency of DRAS. The effectiveness of the proposed approach is validated through offline simulations of the New England 39 bus system and online simulations of IEEE 14 bus test system. In conclusion, a cyber physical test bed utilizing Real Time Digital Simulator (RTDS), Phasor Measurement Units (PMUs), and BeagleBones has been used for the online simulation and validation of the developed cyber-resilient RAS.

17 WIND ENERGY↗

Decentralized State Estimation and Remedial Control Action for Minimum Wind Curtailment Using Distributed Computing Platform

Intermittency of wind energy poses a great challenge for power system operation and control. Wind curtailment might be necessary at the certain operating condition to keep the line flow within the limit. Remedial Action Scheme (RAS) offers quick control action mechanism to keep reliability and security of the power system operation with high wind energy integration. In this paper, a new RAS is developed to maximize the wind energy integration without compromising the security and reliability of the power system based on specific utility requirements. A new Distributed Linear State Estimation (DLSE) is also developed to provide the fast and accurate input data for the proposed RAS. A distributed computational architecture is designed to guarantee the robustness of the cyber system to support RAS and DLSE implementation. The proposed RAS and DLSE is validated using the modified IEEE-118 Bus system. Simulation results demonstrate the satisfactory performance of the DLSE and the effectiveness of RAS. Real-time cyber-physical testbed has been utilized to validate the cyber-resiliency of the developed RAS against computational node failure.

17 WIND ENERGY↗