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Lohn, Andrew

Publications and source records attributed to Lohn, Andrew.

3 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Multilevel resistive information storage and retrieval

The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.

42 ENGINEERING↗
DOE OSTI2016

Methods for resistive switching of memristors

The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗