Physical studies of asteroid 1998 SF36 (25143) - target of the MUSES-C sample return mission
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Engineering topics
Publications and source records attributed to Lowry, S..
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The influence of Grashof and Reynolds number in Metal Organic Chemical Vapor (MOCVD) reactors is being investigated under a combined empirical/numerical study. As part of that research, the deposition of Indium Phosphide in an MOCVD reactor is modeled using the computational code CFD-ACE. The model includes the effects of convection, conduction, and radiation as well as multi-component diffusion and multi-step surface/gas phase chemistry. The results of the prediction are compared with experimental data for a commercial reactor and analyzed with respect to the model accuracy.
Growth from the vapor under conditions of limited contact with the walls of the growth ampoule is beneficial for the quality of the growing crystal due to reduced stress and contamination which may be caused by interactions with the growth container. The technique may be of a particular interest for studies on crystal growth under microgravity conditions: elimination of some factors affecting the crystal quality may make interpretation of space-conducted processes more conclusive and meaningful. For that reason, and as a part of our continuing studies on 'contactless' growth technique, we have developed a computational model of crystal growth process in such system. The theoretical model was built, and simulations were performed using the commercial computational fluid dynamics code, (CFD) ACE. The code uses an implicit finite volume formulation with a gray discrete ordinate method radiation model which accounts for the diffuse absorption and reflection of radiation throughout the furnace. The three-dimensional model computes the heat transfer through the crystal, quartz, and gas both inside and outside the ampoule, and mass transport from the source to the crystal and the sink. The heat transport mechanisms by conduction, natural convection, and radiation, and mass transport by diffusion and convection are modeled simultaneously and include the heat of the phase transition at the solid-vapor interfaces. As the thermal boundary condition, temperature profile along the walls of the furnace is used. For different thermal profiles and furnace and ampoule dimensions, the crystal growth rate and development of the crystal-vapor and source-vapor interfaces (change of the interface shape and location with time) are obtained. Super/under-saturation in the ampoule is determined and critical factors determining the 'contactless' growth conditions are identified and discussed. The relative importance of the ampoule dimensions and geometry, the furnace dimensions and its temperature, and the properties of the grown material are analyzed. The results of the simulations are compared with related experimental results on growth of CdTe, CdZnTe, ZnTe, PbTe, and PbSnTe crystals by this technique.
A numerical model of the thermal field in the furnace-ampoule system developed for the 'contactless' Physical Vapor Transport growth geometry is presented. The model is used to assess the effect of the system geometry and growth parameters on the conditions of 'contactless' growth of cadmium telluride crystals.
Laser Doppler anemometry, radiation thermometry, and time-lapse photography have been used to study heat induced surface-tension driven flows in silicone oil and Fluorinert FC-43 in large open containers. For silicone oil, the effect of the surface tension gradient on the velocity field was not apparent enough to be detected. Because of its high viscosity, the oil was insensitive to outside disturbances, and the flow was steady. In the case of FC-43, the fluid was noticeably influenced by outside disturbances, and the flow was unsteady. The work reported here is part of an effort to develop experimental techniques and select test fluids for future space experiments on fluid motion in materials processing.