Engineering topics

Lu, Nianpeng

Publications and source records attributed to Lu, Nianpeng.

5 records

DOE OSTI2023

Enhanced Magnetization in CoFe 2 O 4 Through Hydrogen Doping

Magnetic spinel oxides have attracted extensive research interest due to their rich physics and wide range of applications. However, these materials invariably suffer suppressed magnetization, due to structural imperfections (e.g., disorder, anti-site defects, etc.). Herein, a dramatic enhanced magnetization is obtained with an increasement of 5 µ B /u.c in CoFe 2 O 4 (CFO) through ionic liquid gating induced hydrogen doping. Further, the intercalated hydrogen ions lead to both distinct lattice expansion of ≈0.7% and notable Fe valence state reduction through electron doping, in which ≈17% Fe 3+ is reduced into Fe 2+ . These facts collectively trigger a site-specific spin-flip on tetrahedrally coordinated Co 2+ sites that enhances the net ferrimagnetic moment nearly to its theoretical maximum for perfect CFO.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Manipulating the insulator–metal transition through tip-induced hydrogenation

Manipulating the insulator–metal transition in strongly correlated materials has attracted a broad range of research activity due to its promising applications in, for example, memories, electrochromic windows and optical modulators. Electric-field-controlled hydrogenation using ionic liquids and solid electrolytes is a useful strategy to obtain the insulator–metal transition with corresponding electron filling, but faces technical challenges for miniaturization due to the complicated device architecture. Here, in this work, we demonstrate reversible electric-field control of nanoscale hydrogenation into VO 2 with a tunable insulator–metal transition using a scanning probe. The Pt-coated probe serves as an efficient catalyst to split hydrogen molecules, while the positive-biased voltage accelerates hydrogen ions between the tip and sample surface to facilitate their incorporation, leading to non-volatile transformation from insulating VO 2 into conducting H x VO 2 . Remarkably, a negative-biased voltage triggers dehydrogenation to restore the insulating VO 2 . This work demonstrates a local and reversible electric-field-controlled insulator–metal transition through hydrogen evolution and presents a versatile pathway to exploit multiple functional devices at the nanoscale.

36 MATERIALS SCIENCE↗

DOE OSTI2022

A Generic Sacrificial Layer for Wide-Range Freestanding Oxides with Modulated Magnetic Anisotropy

Freestanding oxide nanomembranes have promising applications because of their novel electronic states and flexible crystalline structures. Several materials have been developed as sacrificial layers to exfoliate thin films from substrates via wet-etching. However, these materials face great challenges in terms of either complicated crystalline structures or corrosive solutions. Herein, a new sacrificial material, SrCoO 2.5 , is presented, which can be coherently grown with wide-range strains and crystalline orientations and is also soluble in eco-friendly solutions such as acetic acid, vinegar, and even carbonated drinks. With SrCoO 2.5 as the sacrificial layer, high-quality freestanding ferromagnetic SrRuO 3 membranes are achieved from wide-range epitaxial strains and different crystalline orientations. By investigating the evolution of the magnetic properties of these samples, it is discovered that epitaxial strain causes a distinct modification of the magnetic anisotropy of (001) pc -oriented SrRuO 3 samples, while its influence on the (110) pc and (111) pc samples is insignificant. This study not only demonstrates the freestanding SrRuO 3 as a promising material for flexible spintronic devices, but also offers a great opportunity to engineer a wide range of strained and oriented complex oxides for novel freestanding electronics using this newly developed sacrificial material.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interest especially for their electron-doped states. However, previous experiments have been largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here, an ionic-liquid-gating-induced protonation method is utilized to achieve electron-doping into a 5d Mott-insulator built with a SrIrO 3 /SrTiO 3 superlattice (SL), and a systematic mapping of its electron-doped phase diagram is achieved with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolves into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed SL structure can be readily extended into other systems with more exotic states to explore.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Robust Ferromagnetism in Highly Strained SrCoO 3 Thin Films

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition-metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen-vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here, using a postdeposition ozone annealing method, we obtain a series of oxygen stoichiometric SrCoO 3 thin films with the tensile strain up to 3.0%. We observe a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal-to-insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.

36 MATERIALS SCIENCE↗