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Luhmann, N. C., Jr.

Publications and source records attributed to Luhmann, N. C., Jr..

Monolithic millimeter-wave diode array beam controllers: Theory and experiment

In the current work, multi-function beam control arrays have been fabricated and have successfully demonstrated amplitude control of transmitted beams in the W and D bands (75-170 GHz). While these arrays are designed to provide beam control under DC bias operation, new designs for high-speed electronic and optical control are under development. These arrays will fill a need for high-speed watt-level beam switches in pulsed reflectometer systems under development for magnetic fusion plasma diagnostics. A second experimental accomplishment of the current work is the demonstration in the 100-170 GHz (D band) frequency range of a new technique for the measurement of the transmission phase as well as amplitude. Transmission data can serve as a means to extract ('de-embed') the grid parameters; phase information provides more complete data to assist in this process. Additional functions of the array beam controller yet to be tested include electronically controlled steering and focusing of a reflected beam. These have application in the areas of millimeter-wave electronic scanning radar and reflectometry, respectively.

Sjogren, L. B.

Monolithic millimeter-wave diode grid frequency multiplier arrays

Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-barrier-varactor (MQBV) tripler, Schottky-quantum-barrier-varactor (SQBV) tripler, and resonant-tunneling-diode (RTD) tripler arrays, have been successfully fabricated with yields between 85 and 99 percent. Frequency doubling and/or tripling have been observed for all the arrays. Output powers of 2.4-2.6 W (eta = 10-18 percent) at 66 GHz with the BNN doubler and 3.8-10 W (eta = 1.7-4 percent) at 99 GHz with the SQBV tripler have been achieved.

Liu, Hong-Xia L.

Monolithic watt-level millimeter-wave diode-grid frequency tripler array

In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

Hwu, R. J.

Watt-level millimeter-wave monolithic diode-grid frequency multipliers

Wall-level CW solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35 percent at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.

Hwu, J. R.