Engineering topics
Publications and source records attributed to Luong, E..
One of the simplest device realizations of the classic particle-in-the-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP).
Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors.
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An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NET, MRDT, uniformity, and operability.
An optimized long-wavelength two-color Quantum Well Infrared Phototdetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
An optimized long-wavelength very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed.
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NEAT, uniformity, and operability.
In this paper, we discuss the development of highly uniform longwavelength QWIPs for astronomical applications.
Quantum Well Infrared Photodetectors (QWIPs) offer greater flexibility than usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored by varying layer thickness (well width), barrier composition (barrier height), and carrier density (well doping density).
We demonstrate that SiO(sub 2) cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.
In recent years, many research groups in the world have demonstrated large format Quantum Well Infrared Photodetector (QWIP) focal plane arrays for various thermal imaging applications. QWIPs as opposed to conventional low bandgap infrared detectors, are limited by thermionic dark current and not tunneling currents down to 30K or less. As a result the performance of QWIPs can be substantially improved (orders of magnitude) by cooling from 70K to 30K. Cooling does not induce any nonuniformity or 1/f noise in QWIP focal plane arrays. In this paper, we discuss the development of highly uniform long- wavelength QWIPs for astronomical applications.
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It is customary to make infrared (IR) detectors in the long wavelength range by utilizing the interband transition which promotes an electron across the band gap (Eg) from the valence band to the conduction.