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Macha, M.

Publications and source records attributed to Macha, M..

Toward an automated signature recognition toolkit for mission operations

Signature recognition is the problem of identifying an event or events from its time series. The generic problem has numerous applications to science and engineering. At NASA's Johnson Space Center, for example, mission control personnel, using electronic displays and strip chart recorders, monitor telemetry data from three-phase electrical buses on the Space Shuttle and maintain records of device activation and deactivation. Since few electrical devices have sensors to indicate their actual status, changes of state are inferred from characteristic current and voltage fluctuations. Controllers recognize these events both by examining the waveform signatures and by listening to audio channels between ground and crew. Recently the authors have developed a prototype system that identifies major electrical events from the telemetry and displays them on a workstation. Eventually the system will be able to identify accurately the signatures of over fifty distinct events in real time, while contending with noise, intermittent loss of signal, overlapping events, and other complications. This system is just one of many possible signature recognition applications in Mission Control. While much of the technology underlying these applications is the same, each application has unique data characteristics, and every control position has its own interface and performance requirements. There is a need, therefore, for CASE tools that can reduce the time to implement a running signature recognition application from months to weeks or days. This paper describes our work to date and our future plans.

Cleghorn, T.

Investigation of nickel-silicon metallization process

The metallization of silicon solar cells passivated with silicon nitride coating was investigated by using commercial Ni pastes #5517 from Thick Film Systems, #7028-5 from Cermalloy, experimental formulation # X-A by Sollos, Inc. and evaporated Ti-Ni film. Comparative and reference tests were done with the Dupont Ag paste #7095 and with a mixture of Ni paste #5517 with Ag paste #7095 in the respective ratio of 9 to 1 by weight. The evaluation criteria for the metallization was the mechanical bond strength of the contact, solderability, copper plating ability and electrical characteristics in terms of Voc, Isc values and shape of the V-I curve. The results revealed that the Dupont Ag paste #7095 mt all required criteria, while the quality of the cells metalized with the commercial Ni paste #5517 from Thick Film Systems, #7028-5 from Cermalloy as well as the experimental paste # X-A from Sollos, Inc. was below the acceptable standards. A significant improvement was obtained with the mixture of Ni paste #5517 from Thick Film Systems with 10% addition of Dupont paste # 7095.

Macha, M.

A new method of metallization for silicon solar cells

The new metallization process based on Mo-Sn system was studied. The reaction mechanism of MoO3 and its mixture with Sn was examined. The basic ink composition was modified in order to obtain a low ohmic contact to the cell. The electrical characteristics of the cells were comparable with the existing metallization processes. However, in comparison with the standard processes using silver as the contacting metal, the saving obtained by the use of the new process was substantial.

Macha, M.

A New Method of Metallization for Silicon Solar Cells

The determination of the firing cycle in a horizontal tube furnace for MoO3: Sn ink composition applied by silk screening process on P or N structured solar cells is presented. In comparison with the strip heater used to determine the reaction mechanism, the reduction of MoO3 in the tube furnace progresses at a much faster rate and the Sn:Mo alloy forms at a much lower temperature. The device characteristics determined by the V-I curve showed a high resistance (approx. 10 Ohms) at peak temperatures between 600 C and 800 C. The high series resistance is attributed to the lack of formation of MoSi2 within the used temperature range.

Macha, M.

A New Method of Metallization for Silicon Solar Cells

A low cost ohmic contact on silicon solar cells based on molybdenum-tin metal systems was developed. The approach is based on the formulation of a screenable ink composed from molybdenum oxide and tin mixture. The reduction of Mo03 into Mo and the establishment of Mo 03:Sn ratio is studied. Both tasks were done in an experimental station constructed for this purpose. The results show that molybdenum was formed from its oxide at 800 C. and improved in bonding to silicon at 900 C. A 20% Mo03-80%Sn mixture was converted into metallic coating within this temperature range.

Macha, M.

High reliability bond program using small diameter aluminum wire

The program was undertaken to characterize the performance of small diameter aluminum wire ultrasonically bonded to conductors commonly encountered in hybrid assemblies, and to recommend guidelines for improving this performance. Wire, 25.4, 38.1 and 50.8 um (1, 1.5 and 2 mil), was used with bonding metallization consisting of thick film gold, thin film gold and aluminum as well as conventional aluminum pads on semiconductor chips. The chief tool for evaluating the performance was the double bond pull test in conjunction with a 72 hour - 150 C heat soak and -65 C to +150 C thermal cycling. In practice the thermal cycling was found to have relatively little effect compared to the heat soak. Pull strength will decrease after heat soak as a result of annealing of the aluminum wire; when bonded to thick film gold, the pull strength decreased by about 50% (weakening of the bond interface was the major cause of the reduction). Bonds to thin film gold lost about 30 - 40% of their initial pull strenth; weakening of the wire itself at the bond heel was the predominant cause. Bonds to aluminum substrate metallization lost only about 22%. Bonds between thick and thin film gold substrate metallization and semiconductor chips substantiated the previous conclusions but also showed that in about 20 to 25% of the cases, bond interface failure occurred at the semiconductor chip.

Macha, M.