Engineering topics
Publications and source records attributed to Mackintosh, B. H..
Die configuration encourages purity and stable growth. Contour of die orifice changes near ribbon edges. As result, silicon ribbon has nearly constant width and little carbon contamination. Die part of furnace being developed to produce high-quality, low-cost material for solar cells.
Vibratory feeding is method of controlling flow of small oddly shaped particles. Technique applied to other materials that require contamination control by feeding material through vibrating troughs topped by particular material.
Connection method applies force to two interfaces: that between heating element proper and heating-element support members and between heating-element support members and metal conductor. Inner rod of new connector system is maintained in tension by a spring (for example, Belleville washers). Connection is sufficiently complaint so tension remains within desired range, regardless of thermal expansion and contraction of various elements.
We report here progress in a program designed to examine the feasibility of large scale production of low-cost silicon sheet substrates for solar cells by the EFG process. A multiple-ribbon EFG station, containing five single-ribbon cartridges, has been continuously operated for a period of 15 hours at a duty cycle of 94%. The average width of the ribbon grown was 5 cm, and the average growth speed was 3.4 cm/min. The cartridge concept of ribbon growth has been extended to successfully grow 10 cm wide ribbon at speeds up to 4 cm/min. Large area (approximately 50 sq cm) solar cells with efficiencies in the range from 8% to 11% (AM1) have been made from ribbon grown in the cartridge systems.
The background and progress to date of EFG ribbon growth for solar cell applications are briefly reviewed. The design and operation of a multiple ribbon-per-operator manufacturing system are then described. Results are presented of cost studies of this system at three stages of development. In the latter stage, believed to be attainable by 1986, conversion costs for polycrystalline silicon into wafers are attained which are consistent with manufacture of photovoltaic systems at $0.50 per peak watt. Principal technological problems in the ribbon growth process are discussed.