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Mahmood, Q.

Publications and source records attributed to Mahmood, Q..

Systematic DFT study of the impact of anionic variations on the physical properties of Cd1-xMnxX (XS, Se, Te; x = 6.25%)

Highlights: • The structural and electronic properties are investigated with most accurate mBJ potential. • The FM state stability is illustrated for Cd{sub 0.9375}Mn{sub 0.0625}S/Se/Te DMSs. • The FM semiconducting nature depicts potential applications in magneto-optic applications. • The absorption shifts within the visible range with S to Te variation that is verified by E{sub g}. • Thermoelectric properties indicate dominant hole-carriers and suitability at high temperatures. - Abstract: The structural and electronic properties are theoretically investigated for Cd{sub 1-x}Mn{sub x}X (XS, Se, Te; x = 6.25%) diluted magnetic semiconductors, which are further employed for extracting the magnetic, optical and thermoelectric properties using modified-Becke-Johnson (mBJ) potential. Ferromagnetic state stability is confirmed through the computed enthalpy of formation and the cohesive energies. The electronic properties elucidate Cd{sub 1-x}Mn{sub x}X (XS, Se, Te; x = 6.25%) as ferromagnetic semiconductors because both spin channels have Fermi energy level (E{sub F}) within the band gap, depicting potential applications in spintronic devices. The calculated optical response indicates shifts in the absorption within the visible energy that is consistent with the computed direct band gap values (1.9 eV–3.1 eV). Thermoelectric properties observed within 200 K–800 K show positive Seebeck coefficient indicating holes as majority charge carriers. Although Mn-doping suppresses the power factor, however, it improves with temperature, showing a potential for optimizing the thermoelectric performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The First-Principle Study of the Electronic Structure, Ferromagnetic and Thermoelectric Properties of Spinel Alloy FeAl{sub 2}O{sub 4} Using mBJ Functional Approach

In this research work, the modified Becke and Johnson potential has been used to realize the actual electronic states and band gap properties of FeAl{sub 2}O{sub 4}. Ferromagnetism is illustrated in terms of John-Teller energy and exchange energies involved in the system due to electron spin. Moreover, the exchange constants also support the ferromagnetism in the studied compound. The reduction of the magnetic moment of Fe from its free space value and the shifting of the magnetic moment to nonmagnetic sites are the consequence of strong magnetization. In the end, the electrical conductivity and Seebeck coefficient incorporated to give a high value of the power factor and thermal efficiency for energy renewable devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Models of MOS and SOS devices

Quarterly report describes progress in three programs: dc sputtering machine for aluminum and aluminum alloys; two dimensional computer modeling of MOS transistors; and development of computer techniques for calculating redistribution diffusion of dopants in silicon on sapphire films.

Gassaway, J. D.↗

Trends and techniques for space base electronics

A system was developed for depositing aluminum and aluminum alloys by the D.C. sputtering technique. This system which was designed for a high level of cleanliness and ion monitoring the deposition parameters during film preparation is ready for studying the deposition and annealing parameters upon double level metal preparation. The finite element method was studied for use in the computer modeling of two dimensional MOS transistor structures. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions typical of those used at MSFC. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients. Data are given showing both two dimensional effects and the evolution of the junction depth, sheet resistance and integrated dose with redistribution time.

Gassaway, J. D.↗

A study of trends and techniques for space base electronics

A sputtering system was developed to deposit aluminum and aluminum alloys by the dc sputtering technique. This system is designed for a high level of cleanliness and for monitoring the deposition parameters during film preparation. This system is now ready for studying the deposition and annealing parameters upon double-level metal preparation. A technique recently applied for semiconductor analysis, the finite element method, was studied for use in the computer modeling of two dimensional MOS transistor structures. It was concluded that the method has not been sufficiently well developed for confident use at this time. An algorithm was developed for confident use at this time. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program which was developed was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients.

Trotter, J. D.↗