Recent advances in blazed grating fabrication by electron-beam lithography
Convex and concave diffraction gratings are required for concentric imaging spectrometer forms.
Engineering topics
Publications and source records attributed to Maker, Paul D..
Convex and concave diffraction gratings are required for concentric imaging spectrometer forms.
High power, tunable, single mode, narrow linewidth semiconductor lasers in the 2.05-(micro)m wavelength region are needed to develop semiconductor laser reference oscillators for optical remote sensing from Earth orbit. 2.05-I1/4m narrow linewidth monolithic distributed feedback (DFB) and distributed Bragg reflector (DBR) with the external grating ridge waveguide lasers fabricated from epitaxially grown InGaAs/InGaAsP/InP and in InGaAsSb/AlGaAsSb/GaSb heterostructures are reported.
The optical system of this invention is an unique type of imaging spectrometer, i.e. an instrument that can determine the spectra of all points in a two-dimensional scene. The general type of imaging spectrometer under which this invention falls has been termed a computed-tomography imaging spectrometer (CTIS). CTIS's have the ability to perform spectral imaging of scenes containing rapidly moving objects or evolving features, hereafter referred to as transient scenes. This invention, a reflective CTIS with an unique two-dimensional reflective grating, can operate in any wavelength band from the ultraviolet through long-wave infrared. Although this spectrometer is especially useful for rapidly occurring events it is also useful for investigation of some slow moving phenomena as in the life sciences.
The present disclosure describes a technique for creating diffraction gratings on curved surfaces with electron beam lithography. The curved surface can act as an optical element to produce flat and aberration-free images in imaging spectrometers. In addition, the fabrication technique can modify the power structure of the grating orders so that there is more energy in the first order than for a typical grating. The inventors noticed that by using electron-beam lithography techniques, a variety of convex gratings that are well-suited to the requirements of imaging spectrometers can be manufactured.
The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch-modulation (using a detuned central section to prevent intensity peaking in the center of the cavity) is currently under investigation to achieve the required performance goals.
Frequency selective surfaces are widely used in the microwave and millimeter wave regions of the spectrum for filtering signals. They are used in telecommunication systems for multi-frequency operation or in instrument detectors for spectroscopy. The frequency selective surface operation depends on a periodic array of elements resonating at prescribed wavelengths producing a filter response. The size of the elements is on the order of half the electrical wavelength, and the array period is typically less than a wavelength for efficient operation. When operating in the optical region, diffraction gratings are used for filtering. In this regime the period of the grating may be several wavelengths producing multiple orders of light in reflection or transmission. In regions between these bands (specifically in the infrared band) frequency selective filters consisting of patterned metal layers fabricated using electron beam lithography are beginning to be developed. The operation is completely analogous to surfaces made in the microwave and millimeter wave region except for the choice of materials used and the fabrication process. In addition, the lithography process allows an arbitrary distribution of patterns corresponding to resonances at various wavelengths to be produced. The design of sub-millimeter filters follows the design methods used in the microwave region. Exacting modal matching, integral equation or finite element methods can be used for design. A major difference though is the introduction of material parameters and thicknesses tha_ may not be important in longer wavelength designs. This paper describes the design of multi-bandwidth filters operating in the I-5 micrometer wavelength range. This work follows on previous design [1,2]. In this paper extensions based on further optimization and an examination of the specific shape of the element in the periodic cell will be reported. Results from the design, manufacture and test of linear wedge filters built using micro-lithographic techniques and used ir spectral imaging applications will be presented.
A 9-micrometer cutoff 640 x 486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NE.deltaT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature.
Frequency selective surfaces are widely used in the microwave and millimeter wave regions of the spectrum for filtering signals. They are used in telecommunication systems for multi-frequency operation or in instrument detectors for spectroscopy. The frequency selective surface operation depends on a periodic array of elements resonating at prescribed wavelengths producing a filter response. The size of the elements is on the order of half the electrical wavelength, and the array period is typically less than a wavelength for efficient operation. When operating in the optical region, diffraction gratings are used for filtering. In this regime the period of the grating may be several wavelengths producing multiple orders of light in reflection or transmission. In regions between these bands (specifically in the infrared band) frequency selective filters consisting of patterned metal layers fabricated using electron beam lithography are beginning to be developed. The operation is completely analogous to surfaces made in the microwave and millimeter wave region except for the choice of materials used and the fabrication process. In addition, the lithography process allows an arbitrary distribution of patterns corresponding to resonances at various wavelengths to be produced. The design of sub-millimeter filters follows the design methods used in the microwave region. Exacting modal matching, integral equation or finite element methods can be used for design. A major difference though is the introduction of material parameters and thicknesses that may not be important in longer wavelength designs. This paper describes the design of multi- bandwidth filters operating in the 1-5 micrometer wavelength range. This work follows on a previous design. In this paper extensions based on further optimization and an examination of the specific shape of the element in the periodic cell will be reported. Results from the design, manufacture and test of linear wedge filters built using microlithographic techniques and used in spectral imaging applications will be presented.
In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors (QWIP's) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15 micro-m cutoff 128 x 128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (N E(delta T)) of 30 mK has been achieved.
Explore the source record for details and available documents.
A single optical element capable of both wavelength dispersion and imaging would be useful for implementing compact imaging spectrometers.
An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.
A method for producing a phase hologram using e-beam lithography provides n-ary levels of phase and amplitude by first producing an amplitude hologram on a transparent substrate by e-beam exposure of a resist over a film of metal by exposing n is less than or equal to m x m spots of an array of spots for each pixel, where the spots are randomly selected in proportion to the amplitude assigned to each pixel, and then after developing and etching the metal film producing a phase hologram by e-beam lithography using a low contrast resist, such as PMMA, and n-ary levels of low doses less than approximately 200 micro-C/sq cm and preferably in the range of 20-200 micro-C/sq cm, and aggressive development using pure acetone for an empirically determined time (about 6 s) controlled to within 1/10 s to produce partial development of each pixel in proportion to the n-ary level of dose assigned to it.
Designs of electron-tunneling infrared sensors and micromachining processes used to fabricate them modified to increase sensitivity and to simplify operation, adjustment, and associated circuitry. Corrugations, pinholes, and standard packaging incorporated into design. Deflection voltages reduced, and thermal drifts eliminated. Performances exceed those of other commercially available, uncooled infrared sensors. Operation of sensors simplified to such extent, now feasible to ship them to nonexpert users for routine testing and evaluation in their laboratories.
Phase holograms have been created on the surface of a thin film of poly-methyl methacrylate (PMMA, Plexiglas) by direct-write electron beam (E-Beam) lithography. The process involves delivering a patterned exposure dose followed by partial development with a strong developer. The patterned dose derives from arbitrary computer-calculated holograms, which must be corrected for the sensitivity characteristic of the PMMA and for the effective point-spread function of the E-Beam.
Complex, computer-generated phase holograms written in thin films of poly(methyl methacrylate) (PMMA) by process of electron-beam exposure followed by chemical development. Spatial variations of phase delay in holograms quasi-continuous, as distinquished from stepwise as in binary phase holograms made by integrated-circuit fabrication. Holograms more precise than binary holograms. Greater continuity and precision results in decreased scattering loss and increased imaging efficiency.
Complex computer generated phase holograms (CGPH's) have been fabricated in PMMA by partial e-beam exposure and subsequent partial development. The CGPH was encoded as a sequence of phase delay pixels and written by the JEOL JBX-5D2 E-beam lithography system, a different dose being assigned to each value of phase delay. Following carefully controlled partial development, the pattern appeared rendered in relief in the PMMA, which then acts as the phase-delay medium. The exposure dose was in the range 20-200 micro-C/sq cm, and very aggressive development in pure acetone led to low contrast. This enabled etch depth control to better than plus or minus lambda(sub vis)/60. That result was obtained by exposing isolated 50 micron square patches and measuring resist removal over the central area where the proximity effect dose was uniform and related only to the local exposure. For complex CGPH's with pixel size of the order of the e-beam proximity effect radius, the patterns must be corrected for the extra exposure caused by electrons scattered back up out of the substrate. This has been accomplished by deconvolving the two-dimensional dose deposition function with the desired dose pattern. The deposition function, which plays much the same role as an instrument response function, was carefully measured under the exact conditions used to expose the samples. The devices fabricated were designed with 16 equal phase steps per retardation cycle, were up to 1 cm square, and consisted of up to 100 million 0.3-2.0 micron square pixels. Data files were up to 500 MB long and exposure times ranged to tens of hours. A Fresnel phase lens was fabricated that had diffraction limited optical performance with better than 85 percent efficiency.
The authors have designed, fabricated, and tested a quasi-optical submillimeter wave receiver with an Nb/AlO(x)/Nb tunnel junction. This design incorporates a hybrid antenna fed by a planar logarithmic spiral structure in order to couple to the radiation field from the telescope. The novel matching circuit requires several layers of photolithographic processing on top of the actual tunneling device. Computer modeling of the device correctly predicted the measured bandwidth and the characteristic frequencies to within 8 percent. A good match has been obtained from 200 to 475 GHz between the antenna and a relatively large area (1 sq mm) tunnel junction with omega(R(n))C about 2-4. Noise measurements at 318 GHz, 395 GHz, 426 GHz, and 492 GHz yielded uncorrected double sideband receiver noise temperatures of 200 K, 230 K, 220 K, and 500 K, respectively. Using the same optics, coupling efficiencies between the receiver and the Caltech Submillimeter Telescope were found to have values approaching those achieved by the best waveguide-horn-based receiver systems.