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Marsillac, Sylvain

Publications and source records attributed to Marsillac, Sylvain.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

High figure of merit spin polarized electron sources grown via MOCVD

Spin polarized photocathodes are key to the future operation of electron accelerators such as the ones at Thomas Jefferson National Accelerator Facility and Brookhaven National Laboratory. Currently, these photocathodes come in short supply due to limited production by molecular beam epitaxy. By developing a process to implement similar structures using metal organic chemical vapor deposition, the availability of these devices can be increased. Here, in this paper, we detail the implementation of recent photocathode advancements via metal organic chemical vapor deposition process and show an improvement in both polarization and quantum efficiency of our devices compared to those fabricated via molecular beam epitaxy, with devices reaching 82% polarization and 2.9% quantum efficiency.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Post-growth Recrystallization by Halides for High Throughput CIGS Photovoltaics

The objective of this project in broad terms was to address the capital equipment expense associated with Cu(In,Ga)Se 2 (CIGS) as a material for photovoltaic devices. This project has demonstrated a new method for processing CIGS using metal halides to recrystallize and enhance the quality of the final materials. A wide spectrum of metal halides were examined. Of these Cu and In chlorides and AgBr were found to be most effective; and, of these, AgBr was found to produce exemplary results. Cu and In chlorides were found to produce undesirable changes in film composition. The project demonstrated over 16% efficiency in a CIGS device deposited at 10x the standard rate of ~1 μm/hr and with a >100°C reduction in maximum temperature to 450°C. The entire deposition of the absorber layer including the recrystallization step required only 15 minutes, which is a 4x decrease in processing time.

14 SOLAR ENERGY↗
DOE OSTI2022

High-Rate and Low-Temperature Fabrication of Cu(In,Ga)Se 2 Solar Cells Using AgBr Induced Recrystallization

We present results demonstrating a three-stage, high-rate, low-temperature deposition process for Cu(In,Ga)Se 2 solar cells including a recrystallization step after the second stage, catalyzed by AgBr. The entire deposition and recrystallization process takes place below 450 °C in less than 15 min. Device results with efficiencies exceeding 16% are shown. Here, we achieve very high levels of grain growth and a greater than a 5% absolute increase in device performance because of the recrystallization step relative to an identical process not involving AgBr.

14 SOLAR ENERGY↗
DOE OSTI2022

Homogeneous CuGaSe 2 growth by the CuPRO process with In-Situ AgBr treatment

Homogeneous CuGaSe 2 thin film growth is limited by slow kinetics of formation. A modified growth process was previously developed to address this issue but requires two separate long, high temperature anneals. Here, we demonstrate that a short AgBr treatment can replace this modified growth process. The AgBr works as a transport agent to catalyze CuGaSe 2 formation and atomic mobility. Furthermore, this treatment results in large grains with homogeneous composition through the bulk. Solar cells made with this material show better performance.

14 SOLAR ENERGY↗
DOE OSTI2022

A thermodynamic evaluation of metal halides for the recrystallization of Cu(In,Ga)Se 2

CdTe films are deposited at low temperatures and recrystallized to photovoltaic device quality using CdCl 2 treatments, leading to competitive manufacturing costs. Cu(In,Ga)Se 2 (CIGS) typically requires high-temperature, low-rate depositions to produce high-efficiency devices, resulting in higher costs. A similar metal halide treatment of CIGS has been demonstrated by us previously for some metal halide sources. To understand and optimize the process, a thermodynamic evaluation of candidate metal halides for such treatments is presented as a guide for their selection. By comparing bond dissociation energies, mono- and di-halide compounds are proposed to be ideal compounds to act as transport agents. Known recrystallization and temperature reduction benefits by Ag alloying suggests that Ag-halides should be used to aid transport of all species. The high vapor pressure and mobility of Ga compounds still poses a problem for metal halide treatment resulting in Ga etching and removal of intentional Ga gradients. Less severe but similar issues with In compounds may occur. As a result, Cu compounds have low vapor pressures which may limit transport, however, Cu is highly mobile in CIGS and recrystallization still occurs.

14 SOLAR ENERGY↗
DOE OSTI2022

Grain Enhancement in Polycrystalline CuGaSe 2 by AgBr Vapor Treatment

Copper Gallium diselenide (CuGaSe 2 or CGS) thin film were deposited using a three-stage thermal co-evaporation process on molybdenum coated soda lime glass. Recrystallization was carried after the second stage by flashing AgBr for 2 mins. The change in morphology, structure and depth profile were studied after the treatment. SEM and XRD showed an increase in grain size and enhanced crystallinity. Here, a decrease in sodium profile after the treatment was observed through SIMS measurements. Overall, AgBr treatment of CGS seems to be promising for the improvement of film quality, which could help with enhanced device fabrication in the future.

14 SOLAR ENERGY↗
DOE OSTI2022

On the Effect of Indium Chloride Dose on the Recrystallization of Cu(In,Ga)Se 2 Thin Films and associated Devices

Cu(In,Ga)Se 2 thin films deposited by a single-stage co-evaporation process at 350 ºC on molybdenum coated soda lime glass substrate were annealed post-deposition in InCl 3 vapor. The amount of InCl 3 and Se was varied. Here, the annealing treatment was done at 450 ºC for 30 minutes. Increase in grain size was observed after the treatment in all cases by X-ray diffraction. Device performance was low, but improved slightly after KCN etching.

14 SOLAR ENERGY↗
DOE OSTI2022

Impact of Indium Chloride Treatment on the Properties of CuInSe 2 Thin Films

Copper Indium diselenide (CIS) semiconductor thin films were deposited by single-stage process. Following the deposition, annealing and recrystallization of CIS was carried out in the presence of InCl 3 at different temperatures. Increase in grain size was observed by SEM in all cases. Increase in peak intensity was observed by XRD after treatment, correlating well with the SEM results. Measurements of the composition by both XRF and EDS indicate significant changes, notably a decrease in copper content. Here, this will likely be an issue for device performance and will need to be addressed.

14 SOLAR ENERGY↗
DOE OSTI2022

Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells

Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 ºC to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Altogether, AgBr seems to be a suitable transport agent and beneficial for device fabrication.

14 SOLAR ENERGY↗
DOE OSTI2022

Post-deposition Metal Halide Treatment of CuGaSe 2 for Photovoltaic Application

Copper gallium diselenide (CGS) semiconductor thin films were deposited by three-stage thermal co-evaporation process. Post-deposition treatments and recrystallization were performed at various AgBr doses of 40 mg, 60 mg, and 80 mg after the 2 nd stage. The changes in surface morphology were confirmed by SEM. The electrical properties were also modified, as the resistivity of the film decreases with increasing doses. Here, the device performance after the treatment did not change as expected, as the overall device performance only slightly increases in the case of 60 mg of AgBr. Substantial changes in the fabrication process will therefore be required for better device results.

14 SOLAR ENERGY↗
DOE OSTI2021

Study of Indium Chloride Vapor Treatment on Cu(In,Ga)Se 2 Semiconductor Thin Films

The recrystallization by indium chloride of Cu(In,Ga)Se 2 thin films deposited by co-evaporation at 350°C was studied. The process of recrystallization consists of the postdeposition treatment of CIGS sample by InCI3 vapor for 30 minutes with emphasis on grain growth. Here, the treatment resulted in uniform increased grain size and improved crystallinity. XRD measurements suggests the formation of indium rich phase. Dynamic SIMS were also performed to further understand the process, phase separation and the extent of gallium depletion.

14 SOLAR ENERGY↗
DOE OSTI2021

Studying the Recrystallization of Cu(InGa)Se 2 Semiconductor Thin Films by Silver Bromide In-situ Treatment

Cu(In,Ga)Se 2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2 nd and 3 rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Altogether, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.

14 SOLAR ENERGY↗
DOE OSTI2021

Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se 2 Thin Film

Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage coevaporation process on molybdenum coated glass substrate. Here, a vapor treatment was done in between the second and third stage by flashing CuCl 2 for 5 mins at 400 °C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization.

14 SOLAR ENERGY↗
DOE OSTI2021

Generalizable Mechanistic Understanding of Module-Level Light-Moisture and Thermal-Induced Instabilities in CIGS Photovoltaics (Final Report)

The objectives of this project are to identify the root causes of light, heat and humdity induced instabilities in the operation and accelerated testing of commercial Cu(In,Ga)Se 2 [CIGS] photovoltaic modules produced by major module manufacturers (e.g.: Solibro and MiaSolé), correlate them with module degradation/failure modes, and produce accurate service lifetime prediction models.

14 SOLAR ENERGY↗
DOE OSTI2021

Theoretical Analysis of Experimental Data of Sodium Diffusion in Oxidized Molybdenum Thin Films

In this work, the diffusion process of sodium (Na) in molybdenum (Mo) thin films while it was deposited on soda lime glass (SLG) was studied. A small amount of oxygen was present in the chamber while the direct-current (DC) magnetron sputtering was used for the deposition. The substrate temperatures were varied to observe its effect. Such molybdenum films, with or without oxidations, are often used in thin film solar cells, either as back contact or as hole transport layers. Secondary ion mass spectrometry (SIMS) was used to quantify the concentration of the species. A grain diffusion mechanistic model incorporating the effect of grain and grain boundary geometrical shape and size was developed. The model was used to provide an in-depth theoretical analysis of the sodium diffusion in molybdenum thin films that lead to the measured SIMS data. It was observed that not only diffusion coefficients should be considered when analyzing diffusion processes in thin films but also the ratio of grain boundary size to grain size. Both depend on substrate temperature and directly affect the amount of diffused species in the film. The data were analyzed under the light of the film growth speed versus diffusion front speed, the effect of oxygen content, and the effect of substrate temperature on the overall diffusion process. The temperature inversely affects the ratio of grain boundary size and grain size and directly affects the diffusion coefficient, which leads to a preferable temperature at which the highest amount of alkali can be found in the film.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ex-Situ Recrystallization of CIGS via Metal Halides

Post Deposition Treatments (PDT) have been key to improving the efficiency of CIGS solar cells. While efficiency has continued to increase, for thermal evaporation processes, high substrate temperature and low deposition rates are a necessity. For many chemical processes, chemical vapor transport techniques can be used to both purify and grow both large and pure crystalline compounds. This is often done with a halide species and temperature. Here, by using the substituent metals of CIGS in confluence with a halide, we explored the possibility to grow a CIGS layer at low temperature and fast rate while still having sufficiently high efficiency.

14 SOLAR ENERGY↗