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Martin, Jens

Publications and source records attributed to Martin, Jens.

Investigating the Role of Copper Oxide in Electrochemical CO 2 Reduction in Real Time

Copper oxides have been of considerable interest as electrocatalysts for CO 2 reduction (CO2R) in aqueous electrolytes. Yet, their role as an active catalyst in reducing the required overpotential and improving the selectivity of reaction compared with that of polycrystalline copper remains controversial. In this work, we present the use of selected-ion flow tube mass spectrometry, in concert with chronopotentiometry, in situ Raman spectroscopy, and computational modeling, to investigate CO2R on C u 2O nanoneedles, Cu 2 O nanocrystals, and Cu 2 O nanoparticles. We show experimentally that the selective formation of gaseous C2 products (i.e., ethylene) in CO 2 R is preceded by the reduction of the copper oxide (Cu 2 OR) surface to metallic copper. On the basis of density functional theory modeling, CO2R products are not formed as long as Cu 2 O is present at the surface because Cu 2 OR is kinetically and energetically more favorable than CO2R.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (≤30 ns), excellent endurance (~10 12 cycles), stability (>10 6 s) and scalability (down to ~60 nm 2 ). In situ Raman and ultraviolet–visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

Goswami, Sreetosh↗