Vapor-phase growth technique and system for several III-V compound semiconductors Interim scientific report
Vapor phase growth technique for III-V compound semiconductors containing aluminum
Clough, R.↗
Engineering topics
Maruska, H. P.
Publications and source records attributed to Maruska, H. P..
The preparation and properties of vapor- deposited single-crystalline GaN
Vapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc
Maruska, H. P.↗
The preparation and properties of vapor- deposited epitaxial InAs sub 1-x P sub x using arsine and phosphine.
Vapor phase epitaxial production of indium arsenic phosphide crystalline layers, discussing electron mobilities, electrical resistivities and doping
Clough, R. B.↗
GaAs sub 1-x P sub x injection lasers.
Injection lasers of gallium arsenic phosphide alloys studied for threshold current densities and emission efficiency
Hegyi, I. J.↗
Efficiency of GaAs sub 1-x P sub x electroluminescent diodes.
Electroluminescent diodes emission efficiency factor for application to lasers
DIODE↗