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NASA NTRS1985

Position-dependent effective masses in semiconductor theory. II

A compound semiconductor possessing a slowly varying position-dependent chemical composition is considered. An effective-mass equation governing the dynamics of electron (or hole) motion using the Kohn-Luttinger representation and canonical transformations is derived. It is shown that, as long as the variation in chemical composition may be treated as a perturbation, the effective masses become constant, position-independent quantities. The effective-mass equation derived here is identical to the effective-mass equation derived previously by von Roos (1983), using a Wannier representation.

Von Roos, O.↗

NASA NTRS1984

Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions

The application of the radiative transfer theory for semiconductors to p-n homojunctions subject to low level injection conditions is discussed. By virtue of the interaction of the radiation field with free carriers across the depletion layer, the saturation current density in Shockley's expression for the diode current is reduced at high doping levels. The reduction, due to self-induced photon generation, is noticeable for n-type material owing to the small electron effective mass in direct band-gap III-V compounds. The effect is insignificant in p-type material. At an equilibrium electron concentration of 2 x 10 to the 18th/cu cm in GaAs, a reduction of the saturation current density by 15 percent is predicted. It is concluded that realistic GaAs p-n junctions possess a finite thickness.

Von Roos, O.↗