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Maximov, M. V.

Publications and source records attributed to Maximov, M. V..

Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and >20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels

The construction of a semiconductor laser with a stripe waveguide is proposed, the geometry of which can make it possible to obtain radiation similar to that of a phase-locked laser array. The requirements for the parameters of the laser quasi-array and the technological feasibility of the proposed approach are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots

Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗