Resistivity and magnetoresistance properties of R 2 NiSi 3 (R = Gd, Dy, Ho, Er, Tm) compounds
The resistivity and magnetoresistance behaviour of the hexagonal intermetallic compounds R 2 NiSi 3 (R = Gd, Dy, Ho, Er, and Tm) are reported here. All the studied polycrystalline compounds exhibit metallic behavior along with additional magnetic anomalies at low temperatures. A well-defined resistivity minima is observed in Gd 2 NiSi 3 and Dy 2 Ni 0.87 Si 2.95 at a temperature much higher than their respective magnetic transition temperatures. The anomaly has been ascribed to the charge carrier localization caused by magnetic precursor effect. Magnetic field induced crossover from positive to negative magnetoresistance (MR) behavior associated with antiferromagnetic ground state is evidenced for Gd 2 NiSi 3 and Er 2 NiSi 3 in the low temperature region. Although Tm 2 Ni 0.93 Si 2.93 does not exhibit any long range magnetic order down to 2 K, a sudden drop in resistivity behavior is observed below ~10 K. Furthermore, presence of short range magnetic correlation observed in a wide temperature range, much beyond their respective magnetic ordering temperatures, has been argued to be responsible for achieving finite negative MR for all the compounds. Additionally, a subtle resemblance between the observed transport anomalies and the magnetic properties of these systems has been discussed.