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McDonald, Anthony E.

Publications and source records attributed to McDonald, Anthony E..

25 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions

Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.

Ruiz, Isaac↗
DOE OSTI2021

Stress- and Time-Dependent Formation of Self-Lubricating In Situ Carbon (SLIC) Films on Catalytically-Active Noble Alloys

Abstract Low shear strength (30 MPa) organic films were grown in situ on Pt 0.9 Au 0.1 surfaces via cyclic sliding contact in dry N 2 with trace concentrations of ambient hydrocarbons. We present a systematic investigation of the stress- and time-dependent film formation. Steady-state friction coefficients were found to be as low as µ ~ 0.015 and inversely proportional to contact pressure, revealing non-Amontonian behavior. Above a Hertzian contact pressure of ~500 MPa, shear strength dropped, indicating an activated process. Raman spectroscopy identified non-uniformity in areal coverage and relative order with contact pressure. Regions of steady-state low-friction behavior exhibited spectra similar to DLC coatings. Atomic force microscopy was used to study the formation and growth of films at the nanoscale. Stress- and time-dependent measurements suggested a sublinear increase of film volume with time, and a transition from growth to wear at a Hertzian contact pressure of ~1.2 GPa.

Jones, Morgan R.↗
DOE OSTI2020

Thermal conductivity of (Ge 2 Sb 2 Te 5 ) 1–x Cx phase change films

Germanium–antimony–telluride has emerged as a nonvolatile phase change memory material due to the large resistivity contrast between amorphous and crystalline states, rapid crystallization, and cyclic endurance. Improving thermal phase stability, however, has necessitated further alloying with optional addition of a quaternary species (e.g., C). In this work, the thermal transport implications of this additional species are investigated using frequency-domain thermoreflectance in combination with structural characterization derived from x-ray diffraction and Raman spectroscopy. Specifically, the room temperature thermal conductivity and heat capacity of (Ge 2 Sb 2 Te 5 ) 1–x C x are reported as a function of carbon concentration (x ≤ 0:12) and anneal temperature (T ≤ 350 °C) with results assessed in reference to the measured phase, structure, and electronic resistivity. Phase stability imparted by the carbon comes with comparatively low thermal penalty as materials exhibiting similar levels of crystallinity have comparable thermal conductivity despite the addition of carbon. The additional thermal stability provided by the carbon does, however, necessitate higher anneal temperatures to achieve similar levels of structural order.

42 ENGINEERING↗