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McDonnell, Stephen J.

Publications and source records attributed to McDonnell, Stephen J..

Metal Nitride Electrode Stress and Chemistry Effects on Phase and Polarization Response in Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films

Ferroelectric phase stability in hafnium oxide is reported to be influenced by factors that include composition, biaxial stress, crystallite size, and oxygen vacancies. In the present work, the ferroelectric performance of atomic layer deposited Hf 0.5 Zr 0.5 O 2 (HZO) prepared between TaN electrodes that are processed under conditions to induce variable biaxial stresses is evaluated. The post-processing stress states of the HZO films reveal no dependence on the as-deposited stress of the adjacent TaN electrodes. All HZO films maintain tensile biaxial stress following processing, the magnitude of which is not observed to strongly influence the polarization response. Subsequent composition measurements of stress-varied TaN electrodes reveal changes in stoichiometry related to the different preparation conditions. HZO films in contact with Ta-rich TaN electrodes exhibit higher remanent polarizations and increased ferroelectric phase fractions compared to those in contact with N-rich TaN electrodes. HZO films in contact with Ta-rich TaN electrodes also have higher oxygen vacancy concentrations, indicating that a chemical interaction between the TaN and HZO layers ultimately impacts the ferroelectric orthorhombic phase stability and polarization performance. The results of this work demonstrate a necessity to carefully consider the role of electrode processing and chemistry on performance of ferroelectric hafnia films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Aqueous passivation of multi-principal element alloy Ni 38 Fe 20 Cr 22 Mn 10 Co 10 : Unexpected high Cr enrichment within the passive film

The aqueous passivation of a non-equiatomic Ni 38 Fe 20 Cr 22 Mn 10 Co 10 - at.% (Ni 40 Fe 20 Cr 20 Mn 10 Co 10 - wt.%) multi-principal element alloy (MPEA) was investigated in 0.1 M NaCl at pH 4 and compared to a conventional binary Ni 76 Cr 24 – at.% (Ni 78 Cr 22 – wt.%) alloy. The electrochemical behavior and oxide film characteristics were explored utilizing in-situ electrochemical and ex-situ surface-sensitive techniques. The passive film composition, thickness, and elemental valence states, as well as, the fate of each element were studied by in-situ atomic emission spectro-electrochemistry, ex-situ X-ray photoelectron spectroscopy, and atom probe tomography. The Ni 38 Fe 20 Cr 22 Mn 10 Co 10 MPEA demonstrated slightly better corrosion resistance compared to the binary Ni 76 Cr 24 , alloy. Passive films on the MPEA contained primarily Cr, and small amounts of Ni, Fe, Co and Mn, while dissolution of Ni, Fe, Co was observed. Ni 0 was enriched at the oxide/metal interface while Cr was depleted. Enrichment of Cr in the passive film occurred to a greater extent in the MPEA than for the Ni-Cr binary alloy. As a result, enrichment factors were determined and the origins of enrichment are discussed.

36 MATERIALS SCIENCE↗

Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing

Tailoring the electrical transport properties of two-dimensional transition metal dichalcogenides can enable the formation of atomically thin circuits. In this work, cyclic hydrogen and oxygen plasma exposures are utilized to introduce defects and oxidize MoS 2 in a controlled manner. This results in the formation of sub-stochiometric MoO 3-x , which transforms the semiconducting behavior to metallic conduction. To demonstrate functionality, single flakes of MoS 2 were lithographically oxidized using electron beam lithography and subsequent plasma exposures. This enabled the formation of atomically thin inverters from a single flake of MoS 2 , which represents an advancement toward atomically thin circuitry.

36 MATERIALS SCIENCE↗

Passivation of a Corrosion Resistant High Entropy Alloy in Non-oxidizing Sulfate Solutions

The passivation behavior of a novel high entropy alloy (HEA) of composition 38Ni-21Cr-20Fe-13Ru-6Mo-2W at.% (33Ni-16Cr-17Fe-19Ru-9Mo-6W wt.%) was investigated in sulfate solutions of various pH levels. The HEA was compared to a commercially available Ni-Cr-Mo-W-Fe alloy, C-22. Experiments were conducted using in-situ electrochemical and ex-situ surface-sensitive methods to probe the growth and dissolution of the passive layer. The HEA exhibited excellent corrosion resistance in highly acidic and highly alkaline solutions, maintaining passivity through a broad range of potentials below the Cr transpassivity range. Extremely rapid and efficient oxide formation and lower quasi-steady passive current densities were observed during oxide growth in the passive range compared to commercial alloy C-22. Ex-situ characterization of the passive film by atom probe tomography and X-ray photoelectron spectroscopy provided insight into the oxide composition, thickness, and elemental valence states of potentiostatically-grown and air-formed oxides. All elements in the alloy were oxidized following potentiostatic oxide growth. Instead of distinct stoichiometric and phase-distinct oxides, a disordered solid solution oxide was observed with significant enrichment in Cr and Ru with the latter depending sensitively on potential, as well as depletion of Fe and Ni. Enrichment of Cr was modeled with a modified surface enrichment model. The oxide thickness was estimated to be 3-4 nm thick. The connection between the enrichment of Cr in the passive layer, Mo and W presence, and excellent passivity is discussed.

corrosion, High entropy alloys, XPS, atom probe to↗

Atmospheric and Long-term Aging Effects on the Electrical Properties of Variable Thickness WSe 2 Transistors

Atmospheric and long-term aging effects on electrical properties of WSe 2 transistors with various thicknesses are examined. While countless published studies report electrical properties of transition-metal dichalcogenide materials, many are not attentive to testing environment or to age of samples, which we have found significantly impacts results. Our as-fabricated exfoliated WSe 2 pristine devices are predominantly n-type, which is attributed to selenium vacancies. Transfer characteristics of as-fabricated devices measured in air then vacuum reveal physisorbed atmospheric molecules significantly reduced n-type conduction in air. First-principles calculations suggest this short-term reversible atmospheric effect can be attributed primarily to physisorbed H 2 O on pristine WSe 2 , which is easily removed from the pristine surface in vacuum due to the low adsorption energy. Devices aged in air for over 300 h demonstrate irreversibly increased p-type conduction and decreased n-type conduction. Moreover, they develop an extended time constant for recovery of the atmospheric adsorbents effect. Short-term atmospheric aging (up to approximately 900 h) is attributed to O 2 and H 2 O molecules physisorbed to selenium vacancies where electron transfer from the bulk and adsorbed binding energies are higher than the H 2 O-pristine WSe2. The residual/permanent aging component is attributed to electron trapping molecular O 2 and isoelectronic O chemisorption at selenium vacancies, which also passivates the near-conduction band gap state, p-doping the material, with very high binding energy. All effects reflected have the expected thickness dependence, namely, thinner devices are more sensitive to atmospheric and long-term aging effects.

36 MATERIALS SCIENCE↗