Engineering topics
Meier, Rico
Publications and source records attributed to Meier, Rico.
In-situ determination of moisture- and temperature-driven deflection of an encapsulated Si photovoltaic cell
Module reliability and service lifetime are critical factors in improving photovoltaic system performance and reducing the levelized cost of electricity (LCOE). Soldering and lamination of the cell impart residual stresses that persist over time and superimpose additional loads during operation. This paper demonstrates the use of X-ray Topography (XRT) to image in-situ the dynamic response of a glass/backsheet mini-module upon drying at elevated temperature after saturation at humidity levels compatible with accelerated testing. The local water content in the encapsulant is also determined in-situ over time via Water Reflectometric Detection (WaRD), with diffusion of water in the front (glass side) and rear (backsheet side) resolved. As water diffuses out from the back of the glass/backsheet module, the cell curves towards the backsheet concomitantly. Here we find that the cell edges deflect 40μm out-of-plane with respect to its center while the encapsulant dries, compared to ~100 μm deflection when heating from 25°C to 85°C. The local cell deflections (changes in cell orientation) are correlated with the dynamic loss of water in the backside encapsulant. We conclude that the observed cell deflections are the result of hygroscopic stress induced by the encapsulant upon moisture outdiffusion. Therefore, the cell experiences a continually changing stress state and curvature dependent on local humidity and temperature. Depending on cell architecture and interconnection, this “breathing” mode of the cell may induce wear out and fatigue of the interconnects, affect the electrical connection of cracked pieces or cause failure near the interconnected edges of two cells.
Lamination Process Induced Residual Stress in Glass-Glass vs. Glass-Backsheet Modules.
Abstract not provided.
Finite Element Simulation of Potential-Induced Degradation Kinetics in p-Type Silicon Solar Modules
Not provided.
A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells
A numerical model that describes the transport of mobile ionic species in metal–insulator–semiconductor (MIS) and photovoltaic (PV) devices subject to temperature and voltage stress is presented. The finite element method (FEM) is used to solve the Nernst–Planck equation while imposing Poisson's equation self-consistently as a restriction for the electrostatic potential. This allows the contribution of the ionic species to the potential to be taken into account. Using a variational formulation eases the implementation of diverse boundary conditions, including the incorporation of segregation kinetics at the device interfaces. Segregation across the dielectric–semiconductor interface is relevant to modeling the electronic device degradation in systems where contamination reaches the semiconductor. The model in closed systems with no-flux boundary conditions is validated first. In the limiting case of low contamination levels with respect to the gate bias, the FEM solution matches analytically derived approximations. Then, the implementation is broadened to include an open boundary at the dielectric–semiconductor interface to account for leakage of ions. The predicted time dependence of the flatband voltage in Na-contaminated MIS test structures agrees well with measurements. This model successfully captures the role of long-range ion transport at concentrations of relevance to electronic and PV device instability and neuromorphic computing.
Ultrasonic Characterization of Ethylene Vinyl Acetate (EVA) Crosslinking for Quality Assurance and Lamination Process Control (US-Xlink)
Module makers strive to cut lamination processing times to enhance production throughput and reduce costs. If overdone, this might lead to poor EVA quality due to incomplete EVA crosslinking and a large concentration of potentially harmful reactants. Those deficiencies are frequently missed during production quality testing as initially their impact on power output is small. Additionally, the crosslinking agent is frequently inhomogeneously dispersed across the EVA foils such that local destructive characterization procedures such as differential scanning calorimetry (DSC), Soxhlet extraction, swelling methods, or mechanical tests provide only a limited amount of information. However, these defects and inhomogeneities can become considerably more important during field operation, dramatically reducing long-term power yield, and increasing LCOE. Examples of typical long-term module degradation modes relating to poor lamination process conditions include cell breakage, corrosion of the metallization, delamination, and local quality deficiencies. To provide reliable material characterization in a manufacturing setting, we devised a non-destructive technology that uses ultrasound to evaluate the quality of interface adhesion and the degree of crosslinking. As a calibration reference, DSC measurements were employed. Although the potential of ultrasonic approaches for this purpose has already been noted, those previous methods were generally limited to local qualitative measurements. Furthermore, variations in EVA thickness and temperature had a substantial impact on them. The solution we propose solves these limitations by employing ultrasonic absorption rather than relying solely on sound velocity data.
In-situ Mapping of Deformation in Crystalline Silicon Modules: Understanding the Effects of Viscoelasticity.
Abstract not provided.
Mapping Cell Deflection inside PV Modules: The Case of Glass-Glass vs. Glass-Backsheet.
Abstract not provided.
Modeling Time to Failure in Potential-Induced Degradation of Silicon Solar Modules based on Quantitative Sodium Kinetics
We present a physics-based simulation environment for the prediction of potential-induced-degradation (PID) failure time in silicon solar modules. Our model is based on experimental sodium migration kinetics obtained from our recently developed trap-corrected bias-stress-temperature method and from secondary ion mass spectrometry measurements. Furthermore, we model sodium migration to stacking faults and subsequent formation of conductive pathways through the p-n junction, which causes a decrease of the shunt resistance and loss of efficiency.
Insights into Na + Diffusion in Silicon Modules under Operating Conditions: Measuring Low Concentrations by D-SIMS
Sodium induced shunting under an electric field is a challenging reliability issue in crystalline Si solar modules. The source of this Potential-Induced Degradation of the Shunting type (PID-s) is well understood and its influence on power loss has been intensively studied based on phenomenological models on cell or module level relating the experimental power-loss to stressing parameters (time, temperature, voltage). However, little is known about the Na ion migration kinetics, responsible for PID on a microscopic level, and its quantitative relation to the efficiency degradation. In this paper we present our investigations of sodium ion migration in Ethylene-Vinyl Acetate (EVA) and silicon through Dynamic Secondary Ion Mass Spectroscopy (D-SIMS). Each sample was annealed at field relevant temperatures from 60-90 °C to address typical migration mechanisms of common PV installations. Analysis of the SIMS migration profiles revealed a diffusivity constant D 0,EVA = 0.09 ± 0.14 cm 2 /s and an activation energy E A,EVA = 0.85 ± .04 eV for Na in EVA and diffusivities higher than extrapolated literature values in silicon (D 0,Si = (3.03 ± 2.42)x10 -5 cm 2 /s, and E A,Si = 0.98 ± 0.02 eV). The new insight will be included in a drift-diffusion based degradation model accounting for the partition coefficient across all relevant interfaces. This model can assist in predicting PID-failure in the field based on the given model stack and the diffusion of Na + through each material. Furthermore, this tool can be used for process optimization as well as material selection significantly reducing the cost and time to validate a technology.