Engineering topics

Melamed, Celeste

Publications and source records attributed to Melamed, Celeste.

7 records

DOE OSTI2024

Effect of H + Exchange and Surface Impurities on Bulk and Interfacial Electrochemistry of Garnet Solid Electrolytes

Contact loss and current constriction pose significant challenges at the Li metal interface of solid-state batteries. For garnet-structured Li 7 La 3 Zr 2 O 12 (LLZO), these effects are amplified by Li + /H + exchange and surface contamination reactions, which lead to conductivity losses and poor Li wetting. In this study, we utilize a variety of surface treatment processes across 37 cells to selectively induce proton exchange and contamination reactions in LLZO. The resulting bulk and surface chemistry is systematically characterized and correlated to changes in electrochemical properties. Additionally, we combine impedance analysis and finite element method modeling to deconvolute sources of impedance contributions at the Li metal interface. Specifically, we show that constriction impedance at the Li metal interface arises not solely from voids, but also from ionically-resistive surface contaminants. Further, these findings emphasize the connection between ionic conductivity and constriction, demonstrating that micron-scale ionically-resistive components increase constriction even with identical contact geometries. Finally, we leverage our comprehensive dataset to highlight unstable overpotential growth as a failure mechanism, additionally showing that the phase of a cell’s impedance is a sensitive indicator for the onset of interfacial instability. Overall, this study clarifies the impacts of proton exchange and surface contamination on electrochemical properties at the Li|solid electrolyte interface and elucidates insights that are generalizable to other solid-state battery systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Heteroepitaxial Integration of ZnGeN 2 on GaN Buffers Using Molecular Beam Epitaxy

Recently theorized hybrid II-IV-N 2 /III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N 2 materials. In this work, we present heteroepitaxial ZnGeN 2 grown on GaN buffers and AlN templates. We demonstrate that a GaN nucleating surface is crucial for increasing the ZnGeN 2 crystallization rate to combat Zn desorption, extending the stoichiometric growth window from 215 degrees C on AlN to 500 degrees C on GaN buffers. Structural characterization reveals well-crystallized films with threading dislocations extending from the GaN buffer. These films have a critical thickness for relaxation of 20-25 nm as determined by reflection high energy electron diffraction (RHEED) and cross-sectional scanning electron microscopy (SEM). The films exhibit a cation-disordered wurtzite structure, with lattice constants a = 3.216 +/- 0.004 A and c = 5.215 +/- 0.005 A determined by RHEED and X-ray diffraction (XRD). This work demonstrates a significant step toward the development of hybrid ZnGeN 2 -GaN integrated devices.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Blue-green emission from epitaxial yet cation-disordered ZnGeN 2 - x O x

ZnGeN 2 offers a low-cost alternative to InGaN with the potential for band-gap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site creates an additional degree of electronic tunability. Here, we investigate the structure and optoelectronic properties of an epitaxial ZnGeN 2-x O x thin film library grown by combinatorial co-sputtering on c-Al 2 O 3 . Samples exhibit x-ray diffraction patterns and x-ray pole figures characteristic of a wurtzite (cation-disordered) structure with the expected sixfold in-plane symmetry. Transmission electron microscopy reveals a semicoherent interface with periodic dislocations that relieve strain from the large lattice mismatch and also confirms the in-plane and out-of-plane crystallographic orientation. Room-temperature photoluminescence exhibits peaks between 2.4 and 2.8 eV which are consistent with a sharp absorption onset observed by UV-vis spectroscopy. These results demonstrate low-cost synthesis of optically active yet cation disordered ZnGeN 2-x O x , indicating a path toward application as a blue-green emitter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2019

COMBIgor (A data assistant for combinatorial scientists in Igor Pro) [SWR-19-16]

Combinatorial materials science experiments involve synthesis and spatially-resolved characterization of thin film sample libraries. As a result, the modern combinatorial materials science laboratory produces large, diverse, and complex data sets, requiring automation of analysis and visualization techniques. COMBIgor is a software package aimed to assist a combinatorial material scientists with large volumes of experimental data. This package, written in Igor Pro, offers a systematic approach to the loading, processing, and visualizing combinatorial data sets. COMBIgor is designed to be expanded on a laboratory, group, or individual basis to adopt additional loading, processing and visualization capabilities. By utilizing COMBIgor software package the burden of data management in combinatorial materials science experiments can be significantly reduced.

Bauers, Sage↗

DOE OSTI2018

Single Crystalline Substrates for III-V Growth via Exfoliation of Bulk Single Crystals

To enable widespread deployment of GaAs PV, the cost of single crystal substrates must be dramatically reduced. Here we present an indium-bonded exfoliation technique that produces substrates for III-V growth by exfoliation of macroscopic single crystals. Beginning with a search of available substrates, we identified several model materials that are lattice matched to III-Vs. Bi 2 Se 3 single crystals were grown via the Bridgman technique in order to demonstrate our exfoliation method. From a centimeter diameter single crystal, up to eleven substrates with RMS roughness of 0.04 nm in a 20x20 micron region were exfoliated using this method. Large area AFM scans determined a terrace length of 72 um between step edges. Thicknesses were determined to range from 40-160 um using cross-sectional SEM. This exfoliation technique opens the door to the widespread study of layered materials as epitaxial substrates.

14 SOLAR ENERGY↗

DOE OSTI2017

Band Edge Positions and Their Impact on the Simulated Device Performance of ZnSnN 2 -Based Solar Cells

ZnSnN 2 (ZTN) has been proposed as a new earth abundant absorber material for PV applications. While carrier concentration has been reduced to values suitable for device implementation, other properties such as ionization potential, electron affinity and work function are not known. Here, we experimentally determine the value of ionization potential (5.6 eV), electron affinity (4.1 eV) and work function (4.4 eV) for ZTN thin film samples with Zn cation composition Zn/(Zn+Sn) = 0.56 and carrier concentration n = 2x10 19 cm -3 . Using both experimental and theoretical results, we build a model to simulate the device performance of a ZTN/Mg:CuCrO 2 solar cell, showing a potential efficiency of 23% in the limit of no defects present. We also investigate the role of band tails and recombination centers on the cell performance. In particular device simulations show that band tails are highly detrimental to the cell efficiency, and recombination centers are a major limitation if present in concentration comparable to the net carrier density. The effect of the position of the band edges of the p-type junction partner was assessed too. Through this study, we determine the major bottlenecks for the development of ZTN-based solar cell and identify avenues to mitigate them.

14 SOLAR ENERGY↗