Engineering topics

Messick, Louis J.

Publications and source records attributed to Messick, Louis J..

3 records

NASA NTRS1991

Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz

The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 micron. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.

Biedenbender, Michael D.↗

NASA NTRS1991

Indium gallium arsenide microwave power transistors

Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.

Johnson, Gregory A.↗

NASA NTRS1989

Ion-implanted high microwave power indium phosphide transistors

Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.

Biedenbender, Michael D.↗