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Miao, Yu

Publications and source records attributed to Miao, Yu.

Single crystal growth and electronic structure of Rh-doped Sr 3 Ir 2 O 7

Ruddlesden-Popper iridate Sr 3 Ir 2 O 7 is a spin–orbit coupled Mott insulator. Hole doped Sr 3 Ir 2 O 7 provides an ideal platform to study the exotic quantum phenomena that occur near the metal–insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr 3 Ir 2 O 7 . However, the highest doping level reported in Sr 3 (Ir 1− x Rh x ) 2 O 7 single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr 3 (Ir 1− x Rh x ) 2 O 7 with a doping level of ~ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr 3 Ir 2 O 7 compound, which also provide new insights into the MIT with hole doping in this material system.

Physics↗

Tunable Van Hove Singularity without Structural Instability in Kagome Metal $CsTi_{3}Bi_{5}$

In kagome metal $CsV_{3}Sb_{5}$, multiple intertwined orders are accompanied by both electronic and structural instabilities. These exotic orders have attracted much recent attention, but their origins remain elusive. The newly discovered $CsTi_{3}Bi_{5}$ is a Ti-based kagome metal to parallel $CsV_{3}Sb_{5}$. Here, in this work, we report angle-resolved photoemission experiments and first-principles calculations on pristine and Cs-doped $CsTi_{3}Bi_{5}$ samples. Our results reveal that the van Hove singularity (vHS) in $CsTi_{3}Bi_{5}$ can be tuned in a large energy range without structural instability, different from that in $CsV_{3}Sb_{5}$. As such, $CsTi_{3}Bi_{5}$ provides a complementary platform to disentangle and investigate the electronic instability with a tunable vHS in kagome metals.

36 MATERIALS SCIENCE↗

A unique van Hove singularity in kagome superconductor CsV 3-x Ta x Sb 5 with enhanced superconductivity

Van Hove singularity (VHS) has been considered as a driving source for unconventional superconductivity. A VHS in two-dimensional (2D) materials consists of a saddle point connecting electron-like and hole-like bands. In a rare case, when a VHS appears at Fermi level, both electron-like and hole-like conduction can coexist, giving rise to an enhanced density of states as well as an attractive component of Coulomb interaction for unconventional electronic pairing. However, this van Hove scenario is often destroyed by an incorrect chemical potential or competing instabilities. Here, by using angle-resolved photoemission measurements, we report the observation of a VHS perfectly aligned with the Fermi level in a kagome superconductor CsV 3-x Ta x Sb 5 (x~ 0.4), in which a record-high superconducting transition temperature is achieved among all the current variants of AV 3 Sb 5 (A = Cs, Rb, K) at ambient pressure. Doping dependent measurements reveal the important role of van Hove scenario in boosting superconductivity, and spectroscopic-imaging scanning tunneling microscopy measurements indicate a distinct superconducting state in this system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic states dressed by an out-of-plane supermodulation in the quasi-two-dimensional kagome superconductor CsV 3 Sb 5

CsV 3 Sb 5 has attracted much recent attention as the first quasi-two-dimensional (2D) kagome superconductor. While the kagome layers are 2D in nature, increasing evidence has pointed to the importance of out-of-plane correlation in this material. However, it remains unclear whether such correlation can change the fundamental electronic structure of the quasi-2D system. Here, we reveal this missing piece of information, using angle-resolved photoemission spectroscopy, complemented by scanning tunneling microscope measurements. The three-dimensional electronic structures in the high-temperature state are revealed, which agree well with density-functional theory calculations. Electron energy bands are observed in the low-temperature state that exhibit additional periodicities along the out-of-plane momentum. Furthermore, these results reveal a direct response to the out-of-plane electronic supermodulation in the single-particle spectral function of CsV 3 Sb 5 , thus establishing an electronic platform to examine emergent phenomena beyond 2D limit in kagome superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum Nature of Dielectric Laser Accelerators

Dielectric laser accelerators (DLAs) hold great promise for producing economic and compact on-chip radiation sources. On-chip DLAs benefit from fabrication capabilities of the silicon industry and from breakthroughs in silicon-photonic nanostructures to enhance the interaction between particles and laser fields. Seemingly unrelated recent advances in the quantum interactions of electrons and light have raised interest in the underlying classical-quantum correspondence principle at the foundations of electron acceleration. Here, we present the observation of the underlying quantum nature of DLAs: observing quantized peaks in the electron-energy spectra. Our findings demonstrate quasi-phase-matching between an electron wave function and a light wave, which also demonstrates the role of the quantum wave function in the inverse Smith-Purcell effect. We harness the capabilities of an ultrafast transmission electron microscope (UTEM) to maintain a long electron-light interaction length extending over hundreds of periods of the laser pulse, mediated by a silicon-photonic nanograting DLA. The UTEM is shown as a new platform for characterization of future DLA concepts. The results raise fundamental questions regarding the role of quantum mechanics in DLA design, and more generally about the prospects of manipulating particles’ quantum wave functions in accelerator physics.

43 PARTICLE ACCELERATORS↗

Design of a multichannel photonic crystal dielectric laser accelerator

To be useful for most scientific and medical applications, compact particle accelerators will require much higher average current than enabled by current architectures. For this purpose, we propose a photonic crystal architecture for a dielectric laser accelerator, referred to as a multi-input multi-output silicon accelerator (MIMOSA), that enables simultaneous acceleration of multiple electron beams, increasing the total electron throughput by at least 1 order of magnitude. To achieve this, we show that the photonic crystal must support a mode at the Γ point in reciprocal space, with a normalized frequency equal to the normalized speed of the phase-matched electron. We show that the figure of merit of the MIMOSA can be inferred from the eigenmodes of the corresponding infinitely periodic structure, which provides a powerful approach to design such devices. Additionally, we extend the MIMOSA architecture to electron deflectors and other electron manipulation functionalities. These additional functionalities, combined with the increased electron throughput of these devices, permit all-optical on-chip manipulation of electron beams in a fully integrated architecture compatible with current fabrication technologies, which opens the way to unconventional electron beam shaping, imaging, and radiation generation.

43 PARTICLE ACCELERATORS↗

A compact electron source for the dielectric laser accelerator

In this work, we design and demonstrate a compact electron source that combines an integrated silicon nanotip photoemitter with a compact silicon-based electrostatic lens. The lens simultaneously accelerates electrons to 30 keV and focuses the resulting beam to a 0.4 μm (RMS) beam diameter with 62 pm-rad normalized emittance at a distance of 20 mm from the cathode. The compact nature of this lens provides a compelling source for dielectric laser accelerator (DLA) beamlines, ultrafast electron diffraction, or ultrafast electron microscopy. Driven by a 220 fs, 1960 nm pulsed laser beam, electron currents up to 28 electrons/pulse at 100 kHz are demonstrated. The electron bunch length is 540 ± 50 fs for photocurrents of <1 electron/pulse, increasing to 700 ± 80 fs for 28 electrons/pulse, as measured by cross correlation with a 220 fs pulsed laser beam. The maximum 5D peak brightness is measured to be 6.8 × 10 13 A/(m 2 rad 2 ) at 28 electrons/pulse. These results represent a significant step toward developing practical benchtop-sized linear accelerators based on DLA technology or compact ultrafast electron microscopy and diffraction applications.

47 OTHER INSTRUMENTATION↗