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Milliken, A. M.

Publications and source records attributed to Milliken, A. M..

5 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) Layers

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.

Bell, L. D.↗
NASA NTRS1994

Ballistic-Electron-Emission Microscopy of Strained Si l-x Ge x Layers

Ballistic-electron-emission microscopy has been used to investigate the effects of strain on Si l-x Ge x alloys. Lifting of the degeneracy of the conduction-band minimum of SiGe due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures.

lattice↗
NASA NTRS1993

Ballistic-Electron-Emission Microscopy Techniques for Nanometer-scale Characterization of Interfaces

Semiconductor interface properties are among the most important phenomena in materials science and technology. The study of metal/semiconductor Schottky barrier interfaces has been the primary focus of a large research and development community for decades. Throughout the long history of interface investigation, the study of interface defect electronic properties have been seriously hindered by the fundamental experimental difficulty of probing subsurface structures. A new method, Ballistic-Electron-Emission Microscopy (BEEM), has been developed which not only enables spectroscopic probing of subsurface interface properties, but also, provides nanometer-resolution imaging capabilities. BEEM employs Scanning Tunneling Microscopy (STM) and a unique spatially localized ballistic electron spectroscopy method...

Bell, L. D.↗
NASA NTRS1992

Probing hot-carrier transport and elastic scattering using ballistic-electron-emission microscopy

Ballistic-electron-emission microscopy (BEEM) has been used to characterize electron transport and scattering in metal/semiconductor structures. A SiO2 layer at the Au/Si interface was patterned to form transmitting and nontransmitting regions. By analyzing the BEEM current profiles at the boundaries of these regions, information on the spatial distribution of electrons after transport through the Au layer can be derived. A detailed comparison is made between the results presented here and models which involve modification of the electron distribution by scattering.

Milliken, A. M.↗