Relaxed GaP on Si with low threading dislocation density
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Ryan D. Hool↗
Engineering topics
Minjoo Larry Lee
Publications and source records attributed to Minjoo Larry Lee.
Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si
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Brian Li↗
Electron Irradiation Study of Metamorphic 1.7 eV GaAsP Solar Cells
We investigated the effects of 1 MeV electron irradiation on metamorphic ~1.7 eV GaAsP solar cells on GaP and on GaP/Si. Effects of junction polarity, base thickness, and threading dislocation density on radiation hardness were investigated using the AM0 solar simulator at NASA Glenn Research Center. Degradation of solar cell efficiency after irradiation was dominated by reduced minority carrier diffusion length in the base, leading to loss of long-wavelength carrier collection. Designs with higher base diffusion length or thinner base were favored, and accordingly, devices with n+/p junction polarity were more radiation-hard than those with p+/n junction polarity.
Ryan D Hool↗
Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges
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Kunal Mukherjee↗
Challenges of relaxed n -type GaP on Si and strategies to enable low threading dislocation density
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Ryan D. Hool↗