Moheimani, Seyed Omid Reza

DOE OSTI2024

MEMS nanopositioner and method of fabrication

A microelectromechanical (MEMS) device is provided. The MEMS device comprises a substrate and a movable structure flexurally connected to the substrate, capable of moving in relation to the substrate, wherein the movable structure further comprising two or more segments having at least one mechanical connection between said segments to provide structural integrity of the moving structure; and wherein the at least one mechanical connection electrically isolates at least two segments.

Moheimani, Seyed Omid Reza↗

DOE OSTI2023

Cantilever with a collocated piezoelectric actuator-sensor pair

Illustrative embodiments provide an apparatus comprising a substrate comprising a cantilever, a bottom electrode on the substrate, a bottom piezoelectric transducer on the bottom electrode such that the bottom electrode is between the substrate and the bottom piezoelectric transducer, a middle electrode on the bottom piezoelectric transducer such that the bottom piezoelectric transducer is between the bottom electrode and the middle electrode, a top piezoelectric transducer on the middle electrode such that the middle electrode is between the bottom piezoelectric transducer and the top piezoelectric transducer, and a top electrode on the top piezoelectric transducer, such that the top piezoelectric transducer is between the middle electrode and the top electrode. Illustrative embodiments also provide a method of making the apparatus and a method of using the apparatus for atomic force microscopy.

Moheimani, Seyed Omid Reza↗

DOE OSTI2023

Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Moheimani, Seyed Omid Reza↗

DOE OSTI2021

Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Moheimani, Seyed Omid Reza↗