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Mojarradi, Mohammad M

Publications and source records attributed to Mojarradi, Mohammad M.

Select Electronic Parts Operation at Extreme Low Temperature

The purpose of the study presented in this paper is to extend the test period of a selected set of electronics parts at cryogenic condition to dwell period of about 24 hours to demonstrate extreme cold operational capability of these components. The parts tested are tantalum polymer, BX and P90 type ceramic capacitors, thick film resistors, analog multiplexers, a digital inverter, and a D-flip-flop. These parts were tested to assist identifying candidate components that can be used for development of a cold capable telemetry board. There are several past investigations that have shown that COTS (commercial-off-the-shelf) capacitors and resistors tested at cryogenic temperatures and frequencies up to 10MHz did not exhibit significant changes in capacitance and resistance values. Also, there are several test results for active parts. These past tests collected measurements during a temperature sweep from room temperature down to cryogenic temperature with very short dwell time at cryogenic temperature, and back to room temperature. This study extends the operational dwell time to at least 24 hours and returning to room temperature operation without significant degradation in performance, thus, demonstrating the potential for longer dwell time in actual operation in these extreme cold temperatures and a method for identifying the cold operability.

Ashtijou, Mohammad↗

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

operational amplifier↗