Toward Validated Multiscale Multiphysics Modeling for Additive Manufacturing Processes.
Abstract not provided.
Engineering topics
Publications and source records attributed to Moser, Daniel.
Abstract not provided.
Selective laser sintering (SLS) is an additive manufacturing technique for rapidly creating parts directly from a computer-aided design (CAD) model by using a laser to fuse successive layers of powder. However, better understanding of the effect of particle-level variations on the overall build quality is needed. In this work, we investigated these effects computationally by considering the role of the particle size distribution and variations in the powder bed depth to mimic the part complexity found in overhangs and protrusions. In addition, the results from these studies can be distilled to obtain better effective material properties such as laser absorptivity and laser extinction coefficient that are needed for continuum models of the process. We implement a Monte Carlo ray-tracing algorithm within the discrete element model in the open-source simulation software MFiX. Random, loose-packed, particle bed structures are generated, and effective absorptivity and extinction coefficients are calculated. Results are compared against previous computational and experimental measurements for free, monodisperse, and deep powder beds, with good agreement being obtained. Correlations along with uncertainties are developed to allow the effective absorptivity and extinction coefficient as a function of various particle and operational parameters to be accurately set in SLS macroscale models.
Molybdenum trioxide films have been deposited using thermal atomic layer deposition techniques with bis(tert-butylimido)bis(dimethylamido)molybdenum. Films were deposited at temperatures from 100 to 300 °C using ozone as the oxidant for the process. The Mo precursor was evaluated for thermal stability and volatility using thermogravimetric analysis and static vapor pressure measurements. Film properties were evaluated with ellipsometry, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and secondary electron microscopy. The growth rate per cycle was determined to extend from 0.3 to 2.4 Å/cycle with <4% nonuniformity (1-sigma) with-in-wafer across a 150 mm wafer for the investigated temperature range.