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Motakef, Shariar

Publications and source records attributed to Motakef, Shariar.

14 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators

We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF 2 and Yb-doped scintillators such as Lu 2 O 3 :Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga 2 O 3 ) semiconductor-based scintillators for applications requiring these properties. These β-Ga 2 O 3 scintillators were grown using the fast turnaround (~2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 10 17 cm –3 are attributed to native defects, specifically oxygen vacancies (V O ) and gallium–oxygen vacancy pairs (V Ga –V O ), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
NASA NTRS2002

Effects of a Rotating Magnetic Field on Gas Transport During Detached Crystal Growth in Space

During the detached Bridgman growth of semiconductor crystals, the melt has a short free surface which is detached from the ampoule wall near the crystal-melt interface, thus eliminating the crystal defects caused by contact with the ampoule wall. Recent modelling has indicated that initiation and continuation of detached growth depends on the rate of transport of dissolved gas from the crystal-melt interface, where gas is rejected into the melt, to the detached free surface, where evaporating gas maintains the pressure on the free surface. Here we use numerical modelling to investigate whether the application of a rotating magnetic field increases or decreases the transport of rejected gas to the detached free surface. Unfortunately the results show that a rotating magnetic field almost always decreases the evaporation rate at the detached free surface. The exception is an insignificant increase for a short period at the beginning of crystal growth for a few circumstances. The evaporation rate decreases as the strength of the rotating magnetic field is increased.

Walker, John S.↗
NASA NTRS2001

Effects of Traveling Magnetic Field on Dynamics of Solidification

TMF is based on imposing a controlled phase-shift in a train of electromagnets, forming a stack. Thus, the induced magnetic field can be considered to be travelling along the axis of the stack. The coupling of this traveling wave with an electrically conducting fluid results in a basic flow in a form of a single axisymmetric roll. The magnitude and direction of this flow can be remotely controlled. Furthermore, it is possible to localize the effect of this force field though activating only a number of the magnets. This force field generated in the fluid can, in principle, be used to control and modify convection in the molten material. For example, it can be used to enhance convective mixing in the melt, and thereby modify the interface shape, and macrosegregation. Alternatively, it can be used to counteract thermal and/or solutal buoyancy forces. High frequency TMF can be used in containerless processing techniques, such as float zoning, to affect the very edge of the fluid so that Marangoni flow can be counter balanced. The proposed program consists of basic fundamentals and applications. Our goal in conducting the following experiments and analyses is to establish the validity of TMF as a new tool for solidification processes. Due to its low power consumption and simplicity of design, this tool may find wide spread use in a variety of space experiments. The proposed ground based experiments are intended to establish the advantages and limitations of employing this technique. In the fundamentals component of the proposed program, we will use theoretical tools and experiments with mercury to establish the fundamental aspects of TMF-induced convection through a detailed comparison of theoretical predictions and experimental measurements of flow field. In this work, we will conduct a detailed parametric study involving the effects of magnetic field strength, frequency, wave vector, and the fluid geometry. The applications component of this work will be focused on investigating the effect of TMF on the following solidification and pre-directional solidification processes: (1) Bridgman growth of Ga:Ge with the goal of counteracting the buoyancy-driven convection; (2) Mixing of Pb-Ga and Pb-Sn alloys with the aim of initiating and maintaining a uniform melt prior to solidification processing; and (3) Float Zone growth with the aim of identifying, through simulations and model experiments, conditions needed to counteract Marangoni flow in a microgravity environment. The proposed research has strong relevance to microgravity research and the objectives of the NRA. TMF can provide a unique and accurate mechanism for generation and control of desirable flow patterns for microgravity research. These attributes have significant relevance to 1) Alloy mixing prior to solidification in a microgravity environment. TMF can provide this mixing with a low level of power consumption; (2) TMF can offset the deleterious effects of Marangoni convection in microgravity containerless processing. Thus, TMF can be instrumental in further understanding this phenomena; (3) Generation of controlled flows will allow the investigation of the effect of these flows on growth morphology and growth kinetics; and (4) On Earth, TMF has the potential to significantly counter-balance thermosolutal convection, thereby creating conditions similar to those obtained in microgravity. Once demonstrated, this new tool for use in solidification has the strong potential to find applications in a host of microgravity material research projects.

Mazuruk, Konstantin↗
NASA NTRS2001

Reduction of Defects in Germanium-Silicon

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in the crystals. In addition to float-zone processing, detached Bridgman growth, although not a completely crucible-free method, is a promising tool to improve crystal quality. It does not suffer from the size limitations of float zoning and the impact of thermocapillary convection on heat and mass transport is expected to be negligible. Detached growth has been observed frequently during (micro)g experiments. Considerable improvements in crystalline quality have been reported for these cases. However, neither a thorough understanding of the process nor a quantitative assessment of the quality of these improvements exists. This project will determine the means to reproducibly grow Pepsi alloys in a detached mode and seeks to compare processing-induced defects in Bridgman, detached-Bridgman, and floating-zone growth configurations in Pepsi crystals (Si less or = 10 at%) up to 20mm in diameter.

Szofran, Frank R.↗
NASA NTRS2000

Melt Motion Due to Peltier Marking During Bridgman Crystal Growth with an Axial Magnetic Field

This paper treats a liquid-metal flow inside an electrically insulating cylinder with electrically conducting solids above and below the liquid region. There is a uniform axial magnetic field, and there is an electric current through the liquid and both solids. Since the lower liquid-solid interface is concave into the solid and since the liquid is a better electrical conductor than the adjacent solid, the electric current is locally concentrated near the centerline. The return to a uniform current distribution involves a radial electric current which interacts with the axial magnetic field to drive an azimuthal flow. The axial variation of the centrifugal force due to the azimuthal velocity drives a meridional circulation with radial and axial velocities. This problem models the effects of Peltier marking during the vertical Bridgman growth of semiconductor crystals with an externally applied magnetic field, where the meridional circulation due to the Peltier Current may produce important mixing in the molten semiconductor.

Sellers, C. C.↗
NASA NTRS1999

Reduction of Defects in Germanium-Silicon

It is well established that crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached-Bridgman growth is often cited as a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur quite often during microgravity experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project will determine the means to reproducibly grow Ge-Si alloys in the detached mode. Specific objectives include: (1) measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; (2) determination of the mechanism of detached growth including the role of convection; (3) quantitative determination of the differences of defects and impurities among normal Bridgman, detached Bridgman, and floating zone (FZ) growth; (4) investigation of the influence of defined azimuthal or meridional flow due to rotating magnetic fields on the characteristics of detached growth; (5) control time-dependent Marangoni convection in the case of FZ-growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and (6) grow high quality GeSi-single crystals with Si-concentration up to 10 at% and diameters up to 20 mm.

Szofran, Frank R.↗
NASA NTRS1999

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

Szofran, Frank R.↗
NASA NTRS1998

Application of Rotating Magnetic Fields to THM Growth Process: Te-CdTe

The numerical simulation of ongoing traveling heater method (THM) solution growth experiments of CdTe from Te solvent and the influence of a Rotating Magnetic Field (RMF) on control of convection in the solution zone is presented. The application of RMF is pursued as a means to actively control thermo-solutal convection in the solution zone which otherwise would be dominated by buoyancy forces. Numerical simulation and scaling analysis are used to generate a flow-regime map demarcating the boundary separating the buoyancy- and RMF-driven convection in the solution zone. Results indicate that whereas at low gravity levels the application of RMF can completely overwhelm buoyancy-induced convection, at normal gravity levels the successful control of convection by RMF requires use of fairly thin solvent zones. Simulation results also indicate that field strengths required to dominate natural convection on earth may lead to instabilities and transition to turbulence, and an associated deleterious effect on the quality of grown crystals. These and other simulations results are discussed in reference to experimental evidence.

LeClair, Mark↗
NASA NTRS1998

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to conduct the Earth-based research sufficient to successfully propose a flight experiment (1) to experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in conductive melts as this applies to the bulk growth of solid solution semiconducting materials in the reduced gravitational levels available in low Earth orbit and (2) to assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during space processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system was chosen because it has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit high growth rates compared to many other commonly studied alloy semiconductors. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. Some compositional anomalies observed by us in magnetic grown crystals can only be explained by TEMC; this has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface.

Szofran, Frank R.↗
NASA NTRS1998

A Numerical Investigation of the Effect of Thermoelectromagnetic Convection (TEMC) on the Bridgman Growth of Ge(1-x)Si(x)

Thermoelectric currents at the growth interface of GeSi during Bridgman growth are shown to promote convection when a low intensity axial magnetic field is applied. TEMC, typically, is characterized by a meridional flow driven by the rotation of the fluid; meridional convection alters composition of the melt, and shape of the growth interface substantially. TEMC effect is more important in micro-gravity environment than the terrestrial one, and can be used to control convection during the growth of GeSi. In this work, coupled thermo-solutal flow equations (energy, scalar transport, momentum and mass) are solved in tandem with Maxwell's equations to compute the thermo-solutat flow field, electric currents, and the growth-interface shape.

Yesilyurt, Serhat↗
NASA NTRS1998

Reduction of Defects in Germanium-Silicon

It is well established that crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float- zone processing, detached-Bridgman growth is often cited as a promising tool to improve crystal quality, without the limitations of float zoning. Detached growth has been found to occur quite often during micro-g experiments and considerable improvements of crystal quality have been reported for those cases. However, no thorough understanding of the process or quantitative assessment of the quality improvements exists so far. This project will determine the means to reproducibly grow Ge-Si alloys in the detached mode. Specific objectives include: (1) measurement of the relevant material parameters such as contact angle, growth angle, surface tension, and wetting behavior of the GeSi-melt on potential crucible materials; (2) determination of the mechanism of detached growth including the role of convection; (3) quantitative determination of the differences of defects and impurities among normal Bridgman, detached Bridgman, and Floating Zone (FZ) growth; (4) investigation of the influence of defined azimuthal or meridional flow due to rotating magnetic fields on the characteristics of detached growth; (5) control time-dependent Marangoni convection in the case of FZ-growth by the use of a rotating magnetic field to examine the influence on the curvature of the solid-liquid interface and the heat and mass transport; and (6) grow high quality GeSi-single crystals with Si-concentration up to 10 at% and diameters up to 20 mm.

Szofran, Frank R.↗