Photovoltaic cable jackets A comparison of representative products using combined-accelerated stress testing
Not Available
Miller, David C. (ORCID:0000000246985277)↗
Engineering topics
Moutinho, Helio
Publications and source records attributed to Moutinho, Helio.
Soiling, cleaning, and abrasion: The results of the 5-year photovoltaic glass coating field study
Not Available
Bomber, Joanna↗
Photovoltaic Cable Connectors: A Comparative Assessment of the Present State of the Industry
The consequences of failure for balance-of-systems components (such as photovoltaic (PV) cable connectors) include offline module string(s); low system voltage; arc, ground, insulation, and overtemperature faults; triggered fuse(s); system shutdown; and fire. The degradation modes for connectors are studied here through an industry survey and its subsequent examination, which are compared with field-degraded specimens. A total of 117 specimens were obtained from a variety of locations and climates or accelerated tests. A failure analysis for connectors from PV installations was developed (and applied to 54 specimens), including nondestructive examinations (photography, a custom resistance-current scan, and X-ray computed tomography) and destructive examinations (featuring milling of the external plastic, extraction of the internal convolute spring, and potting and polishing in cross section). Surface and through-thickness composition of the metal pins and springs was quantified using scanning electron microscopy with energy-dispersive X-ray spectroscopy. Fourier transform infrared spectroscopy was used to verify the base polymer materials and compare the chemical structure of the connector body, bushing, end nut, and o-ring. Thermogravimetric analysis and differential scanning calorimetry were used to further verify the degradation of the same polymeric components.
cable connectors↗
"Soiling, Cleaning, and Abrasion: The Results of the Five-Year Photovoltaic Glass Coating Field Study" [Slides]
External contamination ("soiling") of the incident surface is a major limiting factor for solar technologies. A 5-year field glass coupon study was conducted to better understand external contamination and its effects; compare cleaning methods and the use of preventative coatings; and explore the abrasion resulting from cleaning to advise on accelerated abrasion testing. Test sites included the cities of Dubai (UAE), Kuwait City (Kuwait), Mesa (AZ), Mumbai (India), and Sacramento (CA). Through the 5-year cumulative study, dry brush, water spray, and wet sponge and squeegee cleaning methods were compared to no cleaning. Optical microscopy was used to obtain images, including representative color images, grayscale images for object analysis, and oblique images for coating integrity assessment. A thresholding protocol was developed to analyze and distinguish specimens using the ImageJ software. Optical performance was quantified using a spectrophotometer, including comprehensive optical characterization (transmittance, reflectance, and absorptance in addition to forward- and back-scattering). Atomic force microscopy was used to verify the abrasion damage morphology, including the width and depth of surface scratches. Analysis of the results included correlation of optical performance and particle area coverage, rank order (by coating or location), and the acceleration factor for abrasion damage. The efficacy of external cleaning was more readily distinguished from the effectiveness of antisoiling coatings. The acceleration factor for dry brush cleaning of a porous silica coating was found to be on the order of unity.
14 SOLAR ENERGY↗
Photovoltaic Cable Connectors: A Comparative Assessment of the Present State of the Industry [Slides]
The consequences of failure for balance of systems (BoS) components (such as PV cable connectors) include offline module string(s); low system voltage; arc, ground, insulation, and over-temperature faults; triggered fuse(s); system shutdown; and fire. The degradation modes for connectors are studied here through an industry survey and its subsequent examination, which are compared to field-degraded specimens. 117 specimens were obtained from a variety of locations and climates or accelerated tests. A failure analysis for connectors from PV installations was developed (and applied to 54 specimens) including nondestructive examinations (photography, a custom resistance-current scan, and X-ray computed tomography) and destructive examinations (featuring milling of the external plastic, extraction of the internal convolute spring, and potting and polishing in cross-section). Surface and through-thickness composition of the metal pins and springs was quantified using scanning electron microscopy with energy-dispersive X-ray spectroscopy. Fourier-transform infrared spectroscopy was used to verify the base polymer materials and compare the chemical structure of the connector body, bushing, end nut, and o-ring. Thermogravimetric analysis and differential scanning calorimetry were used to further verify the degradation of the same polymeric components. Updated from 2023 NIST/UL Workshop on Photovoltaic Materials Durability (website: https://events.ul.com/WPMogn?rt=aAuoWsl4E0KaORLCMeOgfA) and 2024 PVRW workshop (https://pvrw.nrel.gov/past-proceedings).
14 SOLAR ENERGY↗
Accelerated Aging of PV Cables - The Development of Methods Towards Combined-Accelerated Stress Testing
PV cables allow the collection and distribution of electricity from modules to the energy grid. Durable cabling allows continuous operation of PV installations. Cables with a life less than that of the modules must be replaced - reducing electricity generation and adding to the system operating expense. We have examined the durability of a variety of representative cable samples using artificial UV weathering (IEC TS 62788-7-2) and combined accelerated stress testing (C-AST). Jackets in this study include PV-rated (polyolefin), building wire (PVC/PA), and multi-conductor (rubber, as in PV trackers), with some examples of black and red cables. Characterizations at read points include appearance (camera and optical microscope), surface roughness (linear profilometry), instrumented indentation, surface morphology (SEM), chemical composition (EDS), thermal decomposition (TGA), phase transition (DSC), crystalline structure (WAXS), and polymer chemical structure (FTIR). Complimentary examinations confirm damage to the external and interior layer(s) of less durable samples, including changes in morphology (e.g., cracking), chemistry (e.g., oxidation), structure, and mechanical performance (e.g., through-thickness modulus and hardness). The results may be generally compared to other examples from the field (PV installations) or after accelerated testing (IEC 61215). The methods in this study are presently being applied in a follow-on C-AST study, incorporating both dynamic and kinematic fixtures.
balance of systems↗
Multimodal microscopy of extended defects in β-Ga 2 O 3 (010) EFG crystals
Beta-phase gallium oxide (β-Ga 2 O 3 ) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga 2 O 3 crystals is complicated by easily activated (100) and (001) cleavage planes, the presence of low angle grain boundaries (LAGBs) and twins, and the potential formation of polycrystalline grains. In this study, β-Ga 2 O 3 crystals were grown by the edge-defined film-fed growth technique with an (010) principal face. Two crystals with apparently randomly formed high angle grain boundaries (HAGBs) were selected and analyzed by electron backscatter diffraction, electron channeling contrast imaging, and cathodoluminescence to investigate the nature of the LAGBs and the source of the HAGB formation. It was discovered that planar LAGBs lying parallel to the (010) plane exist in the region immediately preceding the start of an HAGB. Increased misorientation across the LAGB was observed, approaching the initiation of a new grain. We present multimodal microscopy characterization, correlating misorientation and variation in optoelectronic properties with LAGBs and the associated dislocations.
14 SOLAR ENERGY↗
Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules
We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.
degradation↗
Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells
We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si front metallization. Scanning spreading resistance microscopy imaging revealed that the number of point or small area electrical contacts decreased in a degraded cell compared to an unaffected cell, demonstrating the direct root cause of the Rs degradation. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the degradation during the long-term field service. The reduction in electrical contact is likely caused by a structural change: The Ag particles in contact with the Si cell aggregate into bulk Ag, and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 um blocks the current conduction from cell emitter to the Ag grid. Our results demonstrate an example of the multi-scale characterization approach for understanding degradation mechanisms in photovoltaics.
c-Si solar cell↗
Silicon Heterojunction Field Performance
The market share of silicon heterojunction (SHJ) modules are expected to increase in the following years. The presentation discusses field performance of SHJ and compares it to other high-efficiency modules. In-depth materials characterization is used to understand the origins of degradation in these type of modules.
ENGINEERING,SOLAR ENERGY↗
Investigating the Role of Copper in Arsenic Doped CdSeTe Photovoltaic Devices
As part of NREL's development of arsenic doped CdSeTe devices, co-doping with copper has become a common practice and, despite little difference in carrier concentration (often ~1016 cm-3), co-doped devices regularly show improved Voc. Given the critical importance of improving Voc, we are investigating this trend with a wide variety of characterization techniques including SEM, EBSD, SIMS, PL, CL, XPS, TRPL, JVT, KPFM, and DLTS. Together these indicate that Cu facilitates improved absorber-buffer interface properties and potentially improved bulk absorber characteristics, though specific mechanisms have not yet been determined. Despite the improved performance of co-doped devices, Voc is still far below its potential, and we explore the possibility that this limitation is the result of low buffer doping in conjunction with high absorber doping.
arsenic doping↗
Investigating the Role of Copper in Arsenic Doped Cd(Se,Te) Photovoltaics
The open circuit voltage (VOC) deficit in Cd(Se,Te)-based photovoltaics remains a critical obstacle for pushing the technology closer to theoretical performance limits. Arsenic doping has become a dominant and promising route to achieve the higher p-type carrier concentrations necessary for higher VOC, but challenges associated with this alternate defect chemistry and higher doping density have hindered progress. Here we show that while arsenic doping enables high carrier concentrations (>1016 cm-3), co-doping with copper can provide a boost to VOC without a significant change to carrier concentration. A large data set is initially used to explore current-voltage and capacitance-voltage trends associated with arsenic doped devices with and without copper. A smaller subset is then used to probe these trends using a wide variety of characterization techniques. Copper is found to facilitate reduced interface recombination and potentially improved bulk absorber characteristics, though the mechanisms for these improvements are not yet clear. Despite the improved performance of co-doped devices, VOC is still far below its potential especially for highly doped devices. Low emitter doping in conjunction with high absorber doping seems to be a plausible cause for this significant deficit, though other device properties may exacerbate this problem.
CdSeTe↗
Differences in Printed Contacts Lead to Susceptibility of Silicon Cells to Series Resistance Degradation
Here, in this case study, we investigate a degradation mode occurring at the cell level in fielded multi-Si modules. The modules exhibit a mix of affected and unaffected cells. Affected cells show a progressive, series-resistance-related power degradation as shown via module- and cell-level IV curves, along with electroluminescence (EL) and PL imaging at the module, cell, and cell core sample scales. Scanning electron microscopy and energy-dispersive X-ray spectroscopy reveal a difference in the oxides in the silver paste used in screen printing of the gridline contacts. The paste in the affected cells is lead rich, whereas the paste in the unaffected cells is zinc rich. This suggests that the cells were screen printed with different silver paste compositions and possibly firing conditions, and that the different composition correlates with the susceptibility to degradation. Our results indicate degradation of the contact at the oxide-silver interface, causing a severe increase in series resistance across the cell that continues to progress over time.
14 SOLAR ENERGY↗
Colossal Grains for a New Structural Paradigm in Thin-Film Photovoltaics
II-VI based thin-film photovoltaics (PV) have experienced substantial commercial success on a foundation of fast large-scale deposition and processing. This type of processing, regardless of material type, nearly always results in small grain (nm to several um diameters) polycrystalline material that, if not for effective grain boundary (GB) and defect passivation, would severely limit PV performance. In the case of CdTe based PV technology, the nearly ubiquitous CdCl2 treatment is used, in part, to passivate the polycrystalline p-type absorber even though Cl is known to (and used to) compensate p-type II-VI materials. Given that VOC is still the most limited performance metric and it can only be improved through higher p-type absorber concentrations, CdCl2 treatments may be holding the technology back. In this talk, we will discuss results related to a process by which small grain CdSeTe material is rapidly transformed into very large grain material (100-1000um diameters, Fig. 1a). This explosive recrystallization, which we have termed colossal grain growth (CGG), occurs by a Cl free process with thin films (<10um) deposited using the same fast deposition techniques the industry has relied on for more than a decade. Our modeling suggests that GB recombination becomes significantly less important at these grain sizes and thus may eliminate the need for a CdCl2 treatment. This result is complimented by previous results of epitaxial growth at high rates on single crystal seed layers. Thin CdSeTe CGG seed layers can be used for rapid epitaxy of CdTe to complete a standard device stack (Fig.1b). This is an optimistic view and the current limitations and challenges related to this process and these materials will also be discussed, including alloy and substrate roughness sensitivity, intragrain material quality, and complex defect chemistry. These challenges are not insignificant but overcoming them may enable a new structural paradigm for thin-film PV.
CdTe↗