Engineering topics

Muir, Ryan D.

Publications and source records attributed to Muir, Ryan D..

3 records

DOE OSTI2025

Temporal resolution and fidelity enhancement of arbitrary waveforms

An apparatus, comprising: Mach-Zehnder modulators (MZMs) numbered MZM #1 to MZM #n that exhibit nonlinearity between an input electrical domain signal and an output optical domain signal; a waveform source for applying a first voltage waveform to a first optical arm of said MZM #1; a laser source configured to direct laser light into the two arms of at least said MZM #1 to produce a first output optical domain signal; the apparatus being provided for utilizing said first output optical signal and the nonlinearities of MZMs numbered MZM #2 to said MZM #n to produce a final output voltage waveform that, compared to said input voltage, comprises at least one of: a shorter rise time, a shorter fall time, an increased signal temporal resolution or small signal dynamic range, an increased vertical resolution for small signals or large signals, a reduced noise on small signals or large signals and an increased bandwidth.

Muir, Ryan D.↗

DOE OSTI2024

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm −1 K −1 at 298° K, compared to BSO's 3.29 Wm −1 K −1 ). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 V pp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Three phase spectral interferometry for recording high dynamic range optical waveforms with <1 ps resolution over >2 ns records applied to closed-loop pulse shaping

Herein we demonstrate, to our knowledge, a novel spectral interferometry technique that simultaneously captures three spectral interferograms of a signal waveform with a reference pulse. The measured performance is robust to nonidealities and ambient drifts by implementing a precisely calibrated 3 × 3 polarization maintaining (PM) splitter that provides three phase shift differences nominally spaced 120° apart. The system can achieve long record length by implementing three, high resolution, virtually imaged phase array (VIPA) spectrometers. Here, we experimentally implement this technique and demonstrate the measurement of waveforms with >2ns of record while maintaining <1ps resolution.

42 ENGINEERING↗