Probabilistic Processing of Asynchronous Geiger-Mode Avalanche Photodiode Arrays for Background Rate Measurements
No abstract provided
Duerr, Erik↗
Engineering topics
Mumolo, Jason
Publications and source records attributed to Mumolo, Jason.
Inductively Coupled Plasma Etching for Delineation of InAs/GaSb Pixels
We developed 320x256 Complimentary Barrier Infrared (CBIRD) focal plane array (FPA) for long wave infrared (LWIR) imaging application. The FPA layers grown by molecular beam epitaxy (MBE) had 300 periods 1.9 micro m thick absorber. The CBIRD arrays showed the mean dark current density of 2.2 x 10(exp -4) A/cm2, when 128 mV bias voltage was applied. The long wave cut off was observed at 8.8 micrometers at the 50% peak and the maximum quantum efficiency was 54% at 5.6 micrometers. The arrays had 81% fill factor with 97% operability with noise equivalent difference temperature (NE(delta)T) of 18.6 mK and a mean detectivity of D*=1.3 x 10(exp 11) Hz(exp 1/2)/W.
InAs/GaSb↗
Dot-in-Well Quantum-Dot Infrared Photodetectors
Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.
Gunapala, Sarath↗
Dual Common Planes for Time Multiplexing of Dual-Color QWIPs
A proposed improved method of externally controlled time multiplexing of the readouts of focal-plane arrays of pairs of stacked quantum-well infrared photodetectors (QWIPs) that operate in different wavelength bands is based on a dual-detector-common-plane circuit configuration. The method would be implemented in a QWIP integrated-circuit chip hybridized with a readout integrated-circuit (ROIC) chip.
Rafol, Sir B.↗
MWIR and LWIR Megapixel QWIP Focal Plane Arrays
A mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal plane array has been demonstrated with excellent imagery. MWIR focal plane has given noise equivalent differential temperature (NETD) of 19 mK at 95K operating temperature with f/2.5 optics at 300K background and LWIR focal plane has given NEDT of 13 mK at 70K operating temperature with same optical and background conditions as MWIR array. Both of these focal plane arrays have shown background limited performance (BLIP) at 90K and 70K operating temperatures with the same optics and background conditions. In this paper, we will discuss their performance in quantum efficiency, NETD, uniformity, and operability.
multi band↗