Murthy, A. [Fermilab]

DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗

DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗

DOE OSTI2025

Ultracoherent SRF Cavity-Based Multi-Qudit Platform with Error-Resilient Control

Superconducting radio-frequency (SRF) cavities offer a promising platform for quantum computing due to their long coherence times, yet integrating nonlinear elements like transmons for control often introduces additional loss. We report a multimode quantum system based on a 2-cell elliptical shaped SRF cavity, comprising two cavity modes weakly coupled to an ancillary transmon circuit, designed to preserve coherence while enabling efficient control of the cavity modes. We mitigate the detrimental effects of the transmon decoherence through careful design optimization that reduces transmon-cavity couplings and participation in the dielectric substrate and lossy interfaces, to achieve single-photon lifetimes of 20.6\,ms and 15.6\,ms for the two modes, and a pure dephasing time exceeding 40\,ms. This marks an order-of-magnitude improvement over prior 3D multimode memories. Leveraging sideband interactions and novel error-resilient protocols, including measurement-based correction and post-selection, we achieve high-fidelity control over quantum states. This enables the preparation of Fock states up to $N = 20$ with fidelities exceeding 95\%, the highest reported to date to the authors' knowledge, as well as two-mode entanglement with an estimated coherence-limited fidelities of 99.9\% after post-selection. These results establish our platform as a robust foundation for quantum information processing, allowing for future extensions to high-dimensional qudit encodings.

Kim, T. [Northwestern U.]↗

DOE OSTI2025

Studies as a function of different ALD capping layers on cavity losses for QIS and accelerators

Niobium-based bulk SRF cavities have demonstrated exceptional performance. To further improve niobium cavity performance, we present studies involving a novel surface engineering process designed to prevent the formation of amorphous niobium oxides on the surface. This is achieved by encapsulating the niobium surface using thermal Atomic-Layer-Deposition (ALD). This technique has been shown to enhance the properties of niobium cavities and 2D resonators. This study not only aims to improve SRF performance at high fields but also has the potential to enhance the quality factor in low-field regimes, particularly for quantum applications. For the method to be effective, it is essential to have a clean interface between the encapsulating layer and the bulk niobium. Achieving this requires a uniform coating across the entire cavity surface and efficient removal of the underlying niobium oxides. To optimize the process, a variety of material characterization tools have been utilized to refine parameters such as thin film thickness and annealing conditions. Cavity RF measurements were performed at the vertical test facilities at FNAL to assess the Q vs. Eacc curves for accelerator applications, as well as at the SQMS dilution refrigerators to investigate the full two-level system (TLS) losses at milliKelvin and single-photon levels. Based on the results, we characterized the loss of different oxides in various regimes and applications, comparing them to natural niobium pentoxide.

Grassellino, L. [Fermilab]↗

DOE OSTI2025

A New Route to Improve the Material Quality of Nb3Sn with Zr Inclusion

Nb3Sn superconducting material promises significant potential to exceed the performance of niobium based superconducting radio frequency (SRF) accelerator cavities. With the aim of advancing the ongoing R&D efforts in improving the material quality of Nb3Sn SRF cavities, we studied how the inclusion of Zr in Nb3Sn matrix via co-sputtering process effects the microscopic structure and superconducting properties. Our results suggest co-sputtered Nb3SnZr alloy as a new prospective material platform to further advance the performance limits of SRF cavities.

Tripathi, Malvika [Fermilab]↗

DOE OSTI2025

High-Quality Factor Microwave Resonators using Rhenium

Coplanar waveguide resonators are a perfect tool to evaluate the losses induced by defects and interfaces in superconducting devices. Even if niobium is the most used superconductor for resonators and qubits, its native oxide at the metal-air (MA) interface limits the device results. Tantalum has recently significantly improved qubit performances due to a thinner and less disordered oxide layer compared to Nb. To further improve the MA interface, we used rhenium, a superconducting material with 1.7 K critical temperature resistant to oxidation: it forms an oxide layer thinner than 1 nm. In this study, we will present a thorough investigation of rhenium CPW resonator measurements with internal quality factors at the single photon level exceeding 2 million. The devices have been fabricated on a sapphire substrate while the processing parameters have been varying and optimized. The measurements have been performed as a function of power and temperature to disentangle different sources of losses, such as two-level systems (TLS) and quasi-particles. A peculiar TLS temperature dependence has been measured and analyzed. In this work, we also vary the participation ratio of the devices to extract the losses introduced by the involved interfaces with higher fidelity and precision. We carried on a deep material characterization effort to link the results to the differences in the fabrication steps, and we will present material characterization measurements performed via AFM, ToF-SIMS, XPS, and TEM.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2025

Integrated Coulomb Blockade Thermometry for Quantum Computing

In our work we present on-chip thermometry concept aimed at improving temperature control during quantum measurements. The key issue addressed is lack of precise temperature monitoring, especially considering the unavoidable thermal resistance between the qubits’ chip and mixing plate of dilution refrigerator. The suggested solution includes a Coulomb Blockade Thermometer (CBT) based on an array of intrinsically normal-conducting tunnel junctions, currently developed at Aalto University. This is a practical solution for superconducting qubit systems.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗