Murthy, Akshay [Fermilab]

DOE OSTI2026

Impact of Annealing on Superconducting Properties of Tantalum Thin Films

The pursuit for higher-coherence superconducting qubits has led to the adoption of new materials and innovative fabrication techniques. Among the commonly used superconducting materials, tantalum-based or tantalum-capped superconducting qubits have demonstrated the longest lifetimes, outperforming niobium devices even in the presence of their native oxides. Given the losses introduced by the surface oxide, one method to further improve performance is to reduce or eliminate the native oxide on tantalum through UHV annealing. In this work, we examine the effect of dissolved oxygen as a function of annealing temperature on the superconducting properties of tantalum thin films. Dissolved oxygen is quantified using atom probe tomography (APT) and secondary ion mass spectrometry (TOF-SIMS) and correlated with electromagnetic transport measurements performed using a Physical Property Measurement System (PPMS). This study observes that annealing decomposes the native oxide and drives oxygen diffusion into the film matrix. Increasing oxygen content decreases the superconducting transition temperature (Tc) and the residual resistivity ratio (RRR). The critical field decreases with the incorporation of oxygen, while the film’s coherence length decreases relatively by 5%. These results, as well as findings from ongoing studies linking fabrication processes to the structural and chemical properties of the superconducting film and Josephson junction, provide insight into effective strategies for improving the performance of superconducting devices.

Shinde, Maithilee [IIT, Chicago; Fermilab]↗

DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗

DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗

DOE OSTI2025

Understanding and Mitigating Coherence and Frequency Fluctuations in Superconducting Transmon Qubits

Transmon qubits are a cornerstone of superconducting quantum computing platforms. However‚ their frequency and coherence properties exhibit temporal fluctuations‚ leading to performance degradation in quantum processors over time. A common mitigation approach involves frequent recalibration‚ which‚ while effective‚ results in increased system downtime. Enhancing the long-term stability of transmon qubits is therefore critical for scalable and reliable quantum computing. In this study‚ we develop novel techniques for understanding the underlying mechanisms driving frequency and coherence fluctuations in fixed-frequency transmon qubits. We further explore strategies to mitigate these instabilities‚ aiming to improve overall system robustness. Our findings provide insights into optimizing superconducting quantum hardware for practical applications.

Roy, Tanay [Fermilab]↗

DOE OSTI2025

Oxygen vacancies in niobium pentoxide as a source of two-level system losses in superconducting niobium

Two-level systems (TLS) have long been a catch-all explanation for RF loss and quantum decoherence in superconducting devices. In our study, the first to directly link TLS losses to a specific physical mechanism, we demonstrate that oxygen vacancies in the naturally formed Nb₂O₅ on oxidized niobium are a major driver of such dissipation. We performed sequential in situ vacuum-baking treatments on niobium superconducting radio-frequency (SRF) cavities and used time-of-flight secondary ion mass spectrometry (TOF-SIMS) to reveal a nonmonotonic evolution in cavity quality factor (Q₀). This behavior correlates with the interplay of Nb₂O₅ vacancy generation and oxide-thickness dissolution. We localize this effect to the oxide itself and present the insignificant role of diffused interstitial oxygen in the underlying Nb by regrowing the oxide via wet oxidation, revealing a mitigation of aggravated TLS losses. We hypothesize that such vacancies in the pentoxide serve as magnetic impurities and are a source of TLS-driven rf loss. Although our measurements center on 3-D SRF cavities, the insights gained here have significant implications for mitigating decoherence in 2-D superconducting qubits.

Bafia, Daniel P. [Fermilab]↗

DOE OSTI2025

Ultracoherent superconducting cavity-based multiqudit platform with error-resilient control

Superconducting radio-frequency (SRF) cavities offer a promising platform for quantum computing due to their long coherence times, yet integrating nonlinear elements like transmons for control often introduces additional loss. We report a multimode quantum system based on a 2-cell elliptical shaped SRF cavity, comprising two cavity modes weakly coupled to an ancillary transmon circuit, designed to preserve coherence while enabling efficient control of the cavity modes. We mitigate the detrimental effects of the transmon decoherence through careful design optimization that reduces transmon-cavity couplings and participation in the dielectric substrate and lossy interfaces, to achieve single-photon lifetimes of 20.6 ms and 15.6 ms for the two modes, and a pure dephasing time exceeding 40 ms. This marks an order-of-magnitude improvement over prior 3D multimode memories. Leveraging sideband interactions and novel error-resilient protocols, including measurement-based correction and post-selection, we achieve high-fidelity control over quantum states. This enables the preparation of Fock states up to $N = 20$ with fidelities exceeding 95%, the highest reported to date to the authors' knowledge, as well as two-mode entanglement with an estimated coherence-limited fidelities of 99.9% after post-selection. These results establish our platform as a robust foundation for quantum information processing, allowing for future extensions to high-dimensional qudit encodings.

Kim, Taeyoon [Fermilab; Northwestern U.]↗

DOE OSTI2025

Pathway to tune sputter coated Nb$_3$Sn with Zr

Superconducting radio frequency (SRF) cavities are essential elements of many modern-day particle accelerators such as, European XFEL (DESY), LCLS II-HE (SLAC) and PIP II (Fermilab). Nb$_3$Sn superconducting material promises significant potential to exceed the performance of conventional niobium based SRF cavities. We aim to advance the ongoing R$&$D efforts to achieve Nb$_3$Sn coated cavities with high material quality. In this work, we have developed to achieve a route for effectively reducing the intrinsic defects in magnetron sputter coated Nb$_3$Sn SRF cavities and eventually improve the overall RF performance. We have observed that Zr is mainly being incorporated as ZrO$_2$ precipitates of average dimensions ranging from 20-100nm. By increasing the concentration of Zr, we have three major effects in the physical properties. Firstly, we noted that the density of the surface and bulk voids as well as their average dimensions are dramatically reduced on increasing the Zr content in Nb$_3$Sn. These surface voids are believed to be detrimental to cavity applications due to increase the local dissipation of electric and magnetic fields. These results indicate that inclusion of Zr in Nb$_3$Sn sputtered coating will improve the material quality and might help to reduce the overall RF power dissipation. Secondly, we observed that increasing Zr concentration from 0 to 2.4% substantially improves both superconducting transition temperature (Tc) and upper critical magnetic field (Hc2). However, on further increasing the Zr concentration to 24%, we noticed a small decrement in the Hc2 value. These results infer that the increase in Zr concentration up to an optimal concentration will be beneficial to enhance the superconducting properties. Increase in Tc promises lesser RF losses and improvement in accelerating gradient, whereas the increase in Hc2 suggests more efficient flux pinning which could give rise to high quality factors in presence of multi-Tesla magnetic field. Additionally, we also observed that increasing Zr concentration possibly prevents the oxygen diffusion and leads to thinner formation of primary surface oxide (Nb$_2$O$_5$ and SnO). This study gives a route to tune Zr fraction in Nb3Sn to modify the physical properties that control the high field performance of Nb3Sn RF cavities.