Engineering topics

Nagata, Takahiro

Publications and source records attributed to Nagata, Takahiro.

6 records

DOE OSTI2023

Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric Hf x Zr 1-x O 2 thin films

TiN/Hf x Zr 1-x O 2 (HZO)/TiN capacitors were prepared using two types of HZO films fabricated by atomic layer deposition using H 2 O or O 2 plasma as an oxidant gas, and post-deposition annealing at 400 °C was performed before the TiN top-electrode fabrication. The ferroelectric orthorhombic phase was dominantly formed for the O 2 plasma-based capacitor due to the strongly oxidizing source of O 2 plasma, resulted in higher remanent polarization (2P r = 20 µC/cm 2 ) than that (13 µC/cm 2 ) of the H 2 O-based capacitor. The fatigue properties for the O 2 plasma-based capacitor were improved by 14 % after 106 cycles compared to the H 2 O-based capacitor. This could be attributed to an oxygen-rich interface reaction layer (IRL) including TiO x between the HZO film and TiN bottom-electrode for the O 2 plasma-based capacitor. In conclusion, based on these results, superior 2P r and fatigue properties can be obtained using O 2 plasma-based HZO films.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Observation of second harmonic electron cyclotron resonance heating and current-drive transition during non-inductive plasma start-up experiment in QUEST

Here, noninductive plasma current start-up using 2nd harmonic electron cyclotron resonance heating (ECRH) with oblique radio frequency (RF) injection is demonstrated in a Q-shu University experiment with steady-state spherical tokamak. A strong transition was observed in the heating and plasma current ramp-up. The initial bulk electron heating regime exhibits T ebulk ~ 140 eV and no hard x-ray (HXR) emission with a low I p of ~15 kA; it abruptly transitions to a regime that exhibits a low T ebulk of ~10 eV and a strong HXR emission with a high I p of ~50 kA. This behavior is distinctly different from that observed in previous fundamental ECRH experiments. The mechanism of the heating and current drive transition are investigated considering wave power absorption and plasma power balance. The results indicate that the transition is caused by the favorable heating of tail electrons where the RF power absorption at the 2nd harmonic increases nearly linearly with T etail , while the power transfer from the tail electrons to the bulk electrons decreases with 1/T etail 0.5 . This causes a rapid transition to a state with high T etail while reducing T ebulk towards colder ion temperature. The understanding of the transition mechanism helps to consider plasma current start-up using 2nd harmonic ECRH for tokamak reactors such as JT-60 SA and ITER.

QUEST↗

DOE OSTI2021

Initial Results from High-Field-Side Transient CHI Start-Up on QUEST

Transient coaxial helicity injection (t-CHI) current start-up using a new design simple electrode configuration has been implemented on the QUEST. Discharges injected from the low field side (LFS) and from the high field side (HFS) were examined. Compared to the LFS injection case, the HFS injection has the advantages of providing access to a higher toroidal field and better controlling the location of the injector flux footprint location. Although the present PF coils on QUEST are not well positioned to form the injector flux on the HFS injector region and there has been a frequent occurrence of the spurious arcs, known as absorber arcs, HFS injection has shown flux evolution in a shape that is suitable for the formation of closed flux surfaces. The discharges were improved by installing an in-vessel-coil and adding a new cylindrical electrode to the existing CHI electrode. Overall, the results show that the new cylindrical electrode allowed the flux to evolve stably while allowing both the inner and the outer injector flux footprint to remain in the vicinity of the cylindrical electrode. This configuration which inherently generates a narrow injector flux footprint width resulted in discharges that strongly suggested the persistence of the CHI generated plasma after the injector current was reduced to zero. These studies have informed us of the need to improve the CHI gas injection system so that the absorber arcs could be better controlled in the HFS injection configuration.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf x Zr 1-x O 2 thin films using synchrotron x-ray analysis

The change in the interplanar spacing ( d -spacing) including the ferroelectric orthorhombic (O) phase in the low-temperature fabricated Hf x Zr 1-x O 2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. The 10-nm-thick HZO films were fabricated by thermal and plasma-enhanced atomic layer deposition (TH- and PE-ALD) methods using H 2 O gas and O 2 plasma as oxidants, respectively, and a post-metallization annealing (PMA) was performed at 300–400 °C. The d -spacing of the mixture of (111)-, (101)-, and (111)-planes of O, tetragonal (T), and cubic (C) phases, respectively, for the TH- and PE-ALD HZO films increased up to 2.99 Å with an increase in PMA temperature, while the d -spacing estimated by conventional x-ray diffraction was 2.92 Å regardless of the PMA temperature. The remanent polarization (2 P r = P r + - P r - ) of the HZO films increased as the PMA temperature increased. It is clear that the 2 P r value satisfied a linear relationship as a function of the d -spacing of O(111)/T(101)/C(111) phases. Furthermore, the wake-up effect was found to depend on the ferroelectric O phase formation. The wake-up effect was significantly reduced in both the TH- and PE-ALD HZO films after the PMA at 400 °C due to the increase in the ferroelectric O phase formation. The leakage current density ( J )–electric field properties of the PE-ALD HZO film with the lowest d -spacing were divided into three steps, such as low, middle, and large J values, in the wake-up (10 3 cycles), pristine (10 0 cycle), and fatigue (10 7 cycles) states, respectively. Therefore, an analysis of the ferroelectric O phase is very important for understanding the ferroelectricity including endurance.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Exploring the First High-Entropy Thin Film Libraries: Composition Spread-Controlled Crystalline Structure

Thin films of two types of high-entropy oxides (HEOs) have been deposited on 76.2 mm Si wafers using combinatorial sputter deposition. In one type of the oxides, (MgZnMnCoNi)O x , all the metals have a stable divalent oxidation state and similar cationic radii. In the second type of oxides, (CrFeMnCoNi)O x , the metals are more diverse in the atomic radius and valence state, and have good solubility in their sub-binary and ternary oxide systems. Therefore, the resulting HEO thin films were characterized using several high-throughput analytical techniques. The microstructure, composition, and electrical conductivity obtained on defined grid maps were obtained for the first time across large compositional ranges. The crystalline structure of the films was observed as a function of the metallic elements in the composition spreads, that is, the Mn and Zn in (MgZnMnCoNi)O x and Mn and Ni in (CrFeMnCoNi)O x . The (MgZnMnCoNi)O x sample was observed to form two-phase structures, except single spinel structure was found in (MgZnMnCoNi)O x over a range of Mn > 12 at. % and Zn < 44 at. %, while (CrFeMnCoNi)O x was always observed to form two-phase structures. Composition-controlled crystalline structure is not only experimentally demonstrated but also supported by density function theory calculation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Electron Bernstein wave conversion of high-field side injected X-modes in QUEST

This paper presents a detailed design of the Q-shu University experimental steady state spherical tokamak's (QUEST's) high-field side (HFS) injection system for electron Bernstein wave (EBW) excitation and the results of an experimental comparison of the HFS eXtraordinary X-mode and low-field side (LFS) ordinary O-mode injection of 8.2 GHz radio frequency (RF) power. Waveguides, as an alternative to mirror polarizers for transmitting RF X-mode power from LFS to HFS for EBW conversion, were used instead of the installation of an RF mirror. Testing of LFS-to-HFS RF power transmission at 8.2 GHz, using an RG-50-type vacuum waveguide in a bench-scale device filled with SF6 gas at 0.03 Mpa, revealed that an RF power of 10.8 kW could traverse the fundamental electron cyclotron resonance layer for 60 s without breakdown. The short-length, open-ended waveguide antenna used in the HFS injection-induced wave diffraction reduced the efficiency of power delivery to the upper hybrid resonance (UHR) by approximately 7% at an electron temperature of 50 eV. The HFS injection was able to produce brighter camera images than the standard LFS injection. The location of the UHR, as estimated by measuring the density with an interferometer, agreed with its location as measured by plasma radiation low-field, side-edge positions shown by fast camera imaging. This indicates that the plasma was produced by mode-converted EBW. The HFS injection had an absorption efficiency of 96%, compared to 40% for LFS. A greater fluctuation of floating potential adjustable to the lower hybrid wave (LHW) was observed in the HFS case by installing a Langmuir probe, confirming that EBW conversion efficiency was higher in the HFS case. Moreover, after setting the poloidal field to B PF = 7.6 mT, plasma current (I P ) in the HFS peaked at 1.3 kA, as opposed to 0.3 kA for LFS, despite LFS injection having a total power of 55 kW, compared to 40 kW for HFS. However, as the impurity level was comparatively high, it is believed that this I P is dominated by pressure-drive, which makes it difficult to analyze EBWCD. Finally, the line-integrated density in the HFS injection peaked at 1.6 × 10 18 m -2 , compared to 8 × 10 17 m -2 in the LFS one.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗