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Nair, Hari P.

Publications and source records attributed to Nair, Hari P..

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Picosecond volume expansion drives a later-time insulator–metal transition in a nano-textured Mott insulator

There is significant technological interest in developing ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of both electrons and associated phonons, which is possible with short-pulse photoexcitation. However, in many Mott insulators, the electronic transition is accompanied by the nucleation and growth of percolating domains of the changed lattice structure, leading to empirical timescales dominated by slowly coarsening dynamics. Here, in this study, we use time-resolved X-ray diffraction and reflectivity measurements to show that the photoinduced insulator-to-metal transition in an epitaxially strained Mott insulating thin film occurs without observable domain formation and coarsening effects, allowing the study of the intrinsic electronic and lattice dynamics. Above a fluence threshold, the initial electronic excitation drives a fast lattice rearrangement, which is followed by a slower electronic evolution into a metastable nonequilibrium state. Microscopic model calculations based on time-dependent dynamical mean-field theory and semiclassical lattice dynamics explain the threshold behaviour and elucidate the delayed onset of the electronic phase transition. This work highlights the importance of combined electronic and structural studies in unravelling the physics of dynamic transitions and the timescales of photoinduced processes. During a photoinduced phase transition, electronic rearrangements are usually faster than lattice ones. Time-resolved measurements now show that the insulator-to-metal transition in a thin-film Mott insulator is preceded by lattice reconfiguration.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Silicon implantation and annealing in β -Ga 2 O 3 : Role of ambient, temperature, and time

Optimizing thermal anneals of Si-implanted β-Ga 2 O 3 is critical for low resistance contacts and selective area doping. Here we report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga 2 O 3 at concentrations from 5 × 10 18 to 1 × 10 20 cm −3 , demonstrating full activation (>80% activation, mobilities >70 cm 2 /V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga 2 O 3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 10 18 , 5 × 10 19, and 1 × 10 20 cm −3 . Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga 2 O 3 stability, p O2 must be greater than 10 −9 bar. Anneals up to p O2 = 1 bar achieve full activation at 5 × 10 18 cm −3, while 5 × 10 19 cm −3 must be annealed with p O2 ≤ 10 −4 bar, and 1 × 10 20 cm −3 requires p O2 < 10 −6 bar. Water vapor prevents activation and must be maintained below 10 −8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 10 19 cm −3 and occurs rapidly at 1 × 10 20 cm −3 . Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga 2 O 3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Electronic nematic order in the normal state of strontium ruthenate

Despite significant achievements in characterizing the properties of Sr 2 ⁢RuO 4 over the last three decades, the precise nature of its electronic ground state is still unresolved. In this work, we provide a missing piece of the puzzle by uncovering evidence of electronic nematic order in the normal state of Sr 2 ⁢RuO 4 , revealed by ultrafast time-resolved optical dichroism measurements of uniaxially strained thin films. This nematic order, whose domains are aligned by the strain, spontaneously breaks the fourfold rotational symmetry of the crystal. The temperature dependence of the dichroism resembles an Ising-like order parameter, and optical pumping induces a coherent oscillation of its amplitude mode. The existence of electronic nematic order in the normal state of Sr2⁢RuO4 may have consequences for the form and mechanism of superconductivity in this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Tilted spin current generated by the collinear antiferromagnet ruthenium dioxide

Symmetry plays a central role in determining the polarization of spin currents induced by electric fields. It also influences how these spin currents generate spin-transfer torques in magnetic devices. Here, we show that an out-of-plane damping-like torque can be generated in ruthenium oxide (RuO 2 )/permalloy devices when the Néel vector of the collinear antiferromagnet RuO 2 is canted relative to the sample plane. By measuring characteristic changes in all three components of the electric-field-induced torque vector as a function of the angle of the electric field relative to the crystal axes, we find that the RuO 2 generates a spin current with a well-defined tilted spin orientation that is approximately parallel to the Néel vector. A maximum out-of-plane damping-like spin torque efficiency per unit electric field of 7±1 × 10 3 Ω -1 m -1 is measured at room temperature. Here, the observed angular dependence indicates that this is an antiferromagnetic spin Hall effect with symmetries that are distinct from other mechanisms of spin-current generation reported in antiferromagnetic and ferromagnetic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Improved control of atomic layering in perovskite-related homologous series

Homologous series are layered phases that can have a range of stoichiometries depending on an index n. Examples of perovskite-related homologous series include (ABO 3 )nAO Ruddlesden–Popper phases and (Bi 2 O 2 ) (A n-1 B n O 3n+1 ) Aurivillius phases. It is challenging to precisely control n because other members of the homologous series have similar stoichiometry and a phase with the desired n is degenerate in energy with syntactic intergrowths among similar n values; this challenge is amplified as n increases. To improve the ability to synthesize a targeted phase with precise control of the atomic layering, we apply the x-ray diffraction (XRD) approach developed for superlattices of III–V semiconductors to measure minute deviations from the ideal structure so that they can be quantitatively eradicated in subsequent films. We demonstrate the precision of this approach by improving the growth of known Ruddlesden–Popper phases and ultimately, by synthesizing an unprecedented n = 20 Ruddlesden–Popper phase, (ATiO 3 ) 20 AO where the A-site occupancy is Ba 0.6 Sr 0.4 . We demonstrate the generality of this method by applying it to Aurivillius phases and the Bi 2 Sr 2 Ca n–1 Cu n O 2n+4 series of high-temperature superconducting phases.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electronic nematicity in Sr 2 RuO 4

We have measured the angle-resolved transverse resistivity (ARTR), a sensitive indicator of electronic anisotropy, in high-quality thin films of the unconventional superconductor Sr 2 RuO 4 grown on various substrates. The ARTR signal, heralding the electronic nematicity or a large nematic susceptibility, is present and substantial already at room temperature and grows by an order of magnitude upon cooling down to 4 K. In Sr 2 RuO 4 films deposited on tetragonal substrates the highest-conductivity direction does not coincide with any crystallographic axis. In films deposited on orthorhombic substrates it tends to align with the shorter axis; however, the magnitude of the anisotropy stays the same despite the large lattice distortion. These are strong indications of actual or incipient electronic nematicity in Sr 2 RuO 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗