Engineering topics
Nakamura, J.
Publications and source records attributed to Nakamura, J..
Half-Integer Conductance Plateau at the ν = 2 / 3 Fractional Quantum Hall State in a Quantum Point Contact
The v = 2/3 fractional quantum Hall state is the hole-conjugate state to the primary Laughlin v = 1/3 state. Here, we investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure designed to have a sharp confining potential. When a small but finite bias is applied, we observe an intermediate conductance plateau with G = 0.5(e 2 /ℎ). This plateau is observed in multiple QPCs, and persists over a significant range of magnetic field, gate voltage, and source-drain bias, making it a robust feature. Using a simple model that considers scattering and equilibration between counterflowing charged edge modes, we find this half-integer quantized plateau to be consistent with full reflection of an inner counterpropagating -1/3 edge mode while the outer integer mode is fully transmitted. In a QPC fabricated on a different heterostructure which has a softer confining potential, we instead observe an intermediate conductance plateau at G = (1/3)(e 2 /ℎ). These results provide support for a model at v = 2/3 in which the edge transitions from a structure having an inner upstream -1/3 charge mode and outer downstream integer mode to a structure with two downstream 1/3 charge modes when the confining potential is tuned from sharp to soft and disorder prevails.
How mentors affect workers' interests and involvement at work
Survey data about experience with mentors were collected from 95 workers at NASA's Jet Propulsion Laboratory. The findings raise questions about reliance on formal mentorships unconnected to proteges' daily work experience and discouragement of supervisor-mentor relationships.
Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications
JPL, under sponsorship from the NASA Office of Advanced Concepts and Technology, has been developing a second-generation solid-state image sensor technology. Charge-coupled devices (CCD) are a well-established first generation image sensor technology. For both commercial and NASA applications, CCDs have numerous shortcomings. In response, the active pixel sensor (APS) technology has been under research. The major advantages of APS technology are the ability to integrate on-chip timing, control, signal-processing and analog-to-digital converter functions, reduced sensitivity to radiation effects, low power operation, and random access readout.
Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications
This paper describes ongoing research and development of CMOS active pixel image sensors for low cost commercial applications. A number of sensor designs have been fabricated and tested in both p-well and n-well technologies. Major elements in the development of the sensor include on-chip analog signal processing circuits for the reduction of fixed pattern noise, on-chip timing and control circuits and on-chip analog-to-digital conversion (ADC). Recent results and continuing efforts in these areas will be presented.
Retrieval of Soil Moisture Profile by Combined Remote Sensing and Modeling
The objective of this paper is to develop a statistically optimal assimilation algorithm which estimates the entire system state, i.e., vertical soil moisture and temperature profiles, from information which is only available for portion of the system (namely, the near-surface soil moisture and temperature).