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Narayanan, Manoj

Publications and source records attributed to Narayanan, Manoj.

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Method for fabrication of crack-free ceramic dielectric films

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Method for fabrication of ceramic dielectric films on copper foils

The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Method for producing thin film electrodes

The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO.sub.2 while simultaneously preventing formation of RuO.sub.2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO.sub.2.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Method for fabrication of crack-free ceramic dielectric films

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Method for fabrication of ceramic dielectric films on copper foils

The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Method for fabrication of crack-free ceramic dielectric films

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Microstructure and electrical properties of LaNiO{sub 3} thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O{sub 3} films on silicon and nickel substrates

Conductive LaNiO{sub 3} (LNO) thin films were deposited on Si substrates by RF sputtering at room temperature to 600 Degree-Sign C. X-ray diffraction of the LNO films showed that preferred orientation varied from (100) below 500 Degree-Sign C to (110) at 600 Degree-Sign C at deposition temperature of 200-600 Degree-Sign C. The room temperature resistivity was 2250-3400 {mu}{Omega}-cm at the range of 200 Degree-Sign C {approx}500 Degree-Sign C. The LNO films, deposited at room temperature, were postannealed in air from 500 to 800 Degree-Sign C, and the resistivity value was 280 {mu}{Omega}-cm at a postannealing temperature of 600 Degree-Sign C. Subsequently, sol-gel derived (Pb,La)(Zr,Ti)O{sub 3} thin films were deposited on LNO-buffered nickel substrates and characterized, the results were compared to those of the same films on silicon substrates. The comparison demonstrated that the performance characteristics of the LNO-buffered nickel foils are similar to those of LNO-buffered silicon substrates. Thus, LNO films prepared by the sputtering method can act as an effective barrier layer on nickel substrates for embedded microelectronic devices.

36 MATERIALS SCIENCE↗