Engineering topics

Nguyen, Hieu T.

Publications and source records attributed to Nguyen, Hieu T..

16 records

DOE OSTI2024

Electrifying Education: Insights into Charging Electric School Buses in the United States

To combat climate change, the United States joined 193 Parties in committing to the Paris Agreement, which aims to limit global warming to 2 degrees C or less, and decarbonizing transportation will be a key requirement for achieving this goal. School buses (SBs) are a common form of student transport in the U.S. with nearly all SBs today powered by fossil fuels (primarily diesel). As a result, SBs have historically been a concerning source of both greenhouse gas (GHG) emissions and local air pollutants with negative health impacts for students and others living nearby. Electric SBs (ESBs) are a promising emerging technology for decarbonizing student transport, however, ESB adoption in the U.S. remains at an early stage (approximate 1.1%) with many outstanding uncertainties. This study aims to elucidate several of these by taking inventory of the total SB stock within U.S. states and studying real-world SB operating profiles to infer potential battery range requirements, daily charging opportunities, and charging infrastructure requirements for ESBs. In addition, we observe the geographic trends of early-stage ESB adoption, which can be used to better understand early adopter patterns and train vehicle technology adoption models.

ADVANCED PROPULSION SYSTEMS,ENERGY PLANNING, POLIC↗

DOE OSTI2024

Solving differential‐algebraic equations in power system dynamic analysis with quantum computing

Abstract Power system dynamics are generally modeled by high dimensional non‐linear differential‐algebraic equations (DAEs) given a large number of components forming the network. These DAEs' complexity can grow exponentially due to the increasing penetration of distributed energy resources, whereas their computation time becomes sensitive due to the increasing interconnection of the power grid with other energy systems. This paper demonstrates the use of quantum computing algorithms to solve DAEs for power system dynamic analysis. We leverage a symbolic programming framework to equivalently convert the power system's DAEs into ordinary differential equations (ODEs) using index reduction methods and then encode their data into qubits using amplitude encoding. The system non‐linearity is captured by Hamiltonian simulation with truncated Taylor expansion so that state variables can be updated by a quantum linear equation solver. Our results show that quantum computing can solve the power system's DAEs accurately with a computational complexity polynomial in the logarithm of the system dimension. We also illustrate the use of recent advanced tools in scientific machine learning for implementing complex computing concepts, that is, Taylor expansion, DAEs/ODEs transformation, and quantum computing solver with abstract representation for power engineering applications.

computational complexity↗

DOE OSTI2023

Electrifying Education: Insights into Charging Electric School Buses in the United States

School buses (SBs) have historically been a source of both greenhouse gas emissions and local air pollutants have negative health impacts for students and others living nearby. Battery electric SBs (ESBs) are a promising emerging technology for decarbonizing student transport, however, ESB adoption in the U.S. remains at an early stage (approximate 1.1%) with many outstanding uncertainties. In this study, we take inventory of the current SB stock within U.S. states and observe real-world SB operating profiles to better understand the potential battery range requirements, daily charging opportunities, and charging infrastructure needs for ESBs.

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2021

Investigation of Gallium–Boron Spin-On Codoping for poly-Si/SiO x Passivating Contacts

A doping technique for p-type poly-Si/SiOx passivating contacts using a spin-on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV oc , contact resistivity ..rho..c) are investigated. For all as-annealed samples at different drive-in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV oc (from ~680 to ~610 mV) and increment in ..rho..c (from ~3 to ~800 mO cm 2 ). After a hydrogenation treatment by depositing a SiN x /AlO x stack followed by forming gas annealing, all samples show improved iVoc (~700 mV with Ga-B co-doped, and ~720 mV with all Ga). Interestingly, when co-doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary-ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically-active Ga and B in the poly-Si and Si layers. Overall, these results help understand the different features of the two dopants: a low ρ c with B, a good passivation with Ga, their degree of activation inside the poly-Si and Si layers, and the annealing effects.

14 SOLAR ENERGY↗

DOE OSTI2021

Comparative Studies of Optoelectronic Properties, Structures, and Surface Morphologies for Phosphorus-Doped Poly-Si/SiOx Passivating Contacts

We investigated and compared optoelectronic properties, crystallographic structures, and nanoscale surface morphologies of ex-situ phosphorus-doped polycrystalline silicon (poly-Si)/SiO x passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition (PECVD), and low-pressure chemical vapour deposition (LPCVD)). Across all these deposition technologies, a similar trend is observed: higher diffusion temperatures yield films that are more crystalline but have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiO x interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. Firstly, the LPCVD method yields the roughest surface and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the smoothest surface for both as-deposited Si and annealed poly-Si films. Secondly, as-deposited sputtered and PECVD Si films contain only an amorphous phase whereas as-deposited LPCVD films has already had some crystalline phase. Thirdly, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods it is weakly dependent on thickness.

crystallographic structures↗

DOE OSTI2021

Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly-Si/SiO x passivating contacts

In this work, we study how crystallographic structures, optoelectronic properties, and nanoscale surface morphologies of ex situ phosphorus-doped polycrystalline silicon (poly-Si)/SiO x passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition [PECVD], and low-pressure chemical vapour deposition [LPCVD]), are investigated and compared. Across all these deposition technologies, we noted the same trend: higher diffusion temperatures yield films that are more crystalline but that have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiO x interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. First, the LPCVD method yields the lowest deposition rate, roughest surfaces, and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the highest deposition rate and smoothest surfaces for both as-deposited Si and annealed poly-Si films. Second, as-deposited sputtered and PECVD Si films contain only an amorphous phase, whereas as-deposited LPCVD films already has some crystalline phase. Third, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods, it is weakly dependent on thickness. Finally, the passivation quality of every poly-Si film type has different responses to the film thickness and diffusion temperature, suggesting that the ex situ doping optimization should be performed independently.

14 SOLAR ENERGY↗

DOE OSTI2020

Deposition pressure dependent structural and optoelectronic properties of ex-situ boron-doped poly-Si/SiO x passivating contacts based on sputtered silicon

Among common methods to form polycrystalline silicon (poly-Si) films for passivating-contact solar cells, physical vapor deposition, in particular sputtering, is the safest one as it does not require any toxic gaseous precursors. One of the critical parameters to control the properties of sputtered silicon films is their deposition pressure. In this work, structural and optoelectronic characteristics of ex-situ boron-doped poly-Si/SiO x passivating contacts, formed from sputtered intrinsic amorphous silicon (a-Si) deposited at different pressures on top of SiO x /c-Si substrates and subjected to a high-temperature boron diffusion step, are investigated. The deposition rate and density of the as-deposited a-Si films increase with reducing pressure. Low-temperature photoluminescence spectra captured from the as-deposited samples at different pressures do not show typical emissions from hydrogenated a-Si. Meanwhile, their Fourier-transform infrared absorption spectra all show Si–H stretching modes, indicating that hydrogen had been initially incorporated into the chemical SiO x layers and eventually hydrogenated the a-Si/SiO x interfaces during the sputtering process. After the high-temperature boron-diffusion step, all hydrogen-related peaks disappear. Lower pressure films (1.5 and 2.5 mTorr) show more consistent improved performance after hydrogen treatments, compared to higher pressure films (4 and 5 mTorr). Overall, the resultant passivating contacts at 2.5 mTorr achieve a low single-side recombination current density Jo of ~9 fA/cm 2 , whereas their contact resistivity is still low at 15 mO cm 2 .

14 SOLAR ENERGY↗

DOE OSTI2020

Emission Control from Transition Metal Dichalcogenide Monolayers by Aggregation-Induced Molecular Rotors

Organic–inorganic (O–I) heterostructures, consisting of atomically thin inorganic semiconductors and organic molecules, present synergistic and enhanced optoelectronic properties with a high tunability. Here, we develop a class of air-stable vertical O–I heterostructures comprising a monolayer of transition-metal dichalcogenides (TMDs), including WS 2 , WSe 2 , and MoSe 2 , on top of tetraphenylethylene (TPE) core-based aggregation-induced emission (AIE) molecular rotors. The created O–I heterostructures yields a photoluminescence (PL) enhancement of up to ~950%, ~500%, and ~330% in the top monolayer WS 2 , MoSe 2 , and WSe 2 as compared to PL in their pristine monolayers, respectively. The strong PL enhancement is mainly attributed to the efficient photogenerated carrier process in the AIE luminogens (courtesy of their restricted intermolecular motions in the solid state) and the charge-transfer process in the created type I O–I heterostructures. Moreover, we observe an improvement in photovoltaic properties of the TMDs in the heterostructures including the quasi-Fermi level splitting, minority carrier lifetime, and light absorption. Overall, this work presents an inspiring example of combining stable, highly luminescent AIE-based molecules, with rich photochemistry and versatile applications, with atomically thin inorganic semiconductors for multifunctional and efficient optoelectronic devices.

14 SOLAR ENERGY↗

DOE OSTI2020

Extracting Optical Bandgaps from Luminescence Images of Perovskite Solar Cells

We report a camera-based method to capture optical bandgap images of perovskite solar cells (PSCs). It is fast and non-destructive. It can also provide micron-scale spatial resolution. This imaging technique utilizes well-defined and relatively symmetrical band-to-band luminescence spectra emitted from perovskite materials. Their spectra can be fitted with Gaussian functions whose peak locations are similar to absorption thresholds and thus represent the material optical bandgaps. We apply the technique to resolve relative variations in optical bandgaps across various PSCs, and to show optical bandgap inhomogeneity within the same device due to material degradation and impurities. Degradation and impurities were found to both cause optical bandgap shifts inside the materials. Our results are independently confirmed with photoluminescence and absorption spectroscopy.

14 SOLAR ENERGY↗

DOE OSTI2019

Hydrogen-Assisted Defect Engineering of Doped Poly-Si Films for Passivating Contact Solar Cells

Hydrogen-assisted defect engineering, via a hydrogenated silicon nitride (SiN x :H) capping layer, on doped polycrystalline silicon (poly-Si) passivating-contact structures, is explored using complementary techniques. The hydrogen treatment universally improves the passivation quality of poly-Si/SiO x stacks on all samples investigated. Meanwhile, their contact resistivity remains very low at ~6 m$\Omega$cm 2 . Moreover, the nature of charge carrier recombination within the poly-Si films is also investigated by means of photoluminescence. On planar c-Si substrates, the poly-Si films emit two broad photoluminescence peaks ~850-1050 nm and ~1300-1500 nm. The former is the characteristic peak of the hydrogenated amorphous Si (a-Si:H) phase and only appears after the treatment, demonstrating that i) a significant amount of hydrogen has been driven into the poly-Si film and ii) an amorphous phase is present within it. The second peak originates from sub-bandgap radiative defects inside the poly-Si films and increases after the treatment, suggesting a suppression of their non-radiative recombination channels. For films deposited on textured c-Si substrates, there is a disrupted oxide boundary, preventing a build-up of excess carriers inside the films and leading to quenching of the film luminescence.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Hydrogenation Mechanisms of Poly-Si/SiO x Passivating Contacts by Different Capping Layers

Herein, posttreatment techniques of phosphorus-doped poly-Si/SiO x passivating contacts, including forming gas annealing (FGA), atomic layer deposition (ALD) of hydrogenated aluminum oxide (AlO x :H), and plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated silicon nitride (SiN x :H), are investigated and compared in terms of their application to silicon solar cells. A simple FGA posttreatment produces a significant increase in the implied open circuit voltage (iV oc ) and the effective minority-carrier lifetime (teff) of high-resistivity crystalline Si (c-Si) samples, whereas low-resistivity samples show a minimal change. Treatment by means of AlO x :H and/or SiN x :H followed by postdeposition FGA results in a universal increase in t eff and iV oc for all substrate resistivities (as high as 12.5 ms and 728 mV for 100 Ω cm and 5.4 ms and 727 mV for 2 Ω cm n-type c-Si substrates). In addition, both the FGA and AlO x :H + FGA techniques can inject sufficient hydrogen into the samples to passivate defects at the SiO x /c-Si and poly-Si/SiO x interfaces. However, this hydrogen concentration is insufficient to neutralize both the nonradiative defects inside the poly-Si films and dangling bonds associated with the amorphous Si phase present in them. The hydrogen injected by the SiN x :H + FGA technique can passivate both the interfaces and the defects and dangling bonds within the poly-Si film. These results are confirmed by low-temperature photoluminescence spectroscopy, Fourier transform infrared spectroscopy, and dynamic secondary-ion mass spectrometry measurements.

14 SOLAR ENERGY↗

DOE OSTI2018

Imaging Spatial Variations of Optical Bandgaps in Perovskite Solar Cells

A fast, nondestructive, camera-based method to capture optical bandgap images of perovskite solar cells (PSCs) with micrometer-scale spatial resolution is developed. This imaging technique utilizes well-defined and relatively symmetrical band-to-band luminescence spectra emitted from perovskite materials, whose spectral peak locations coincide with absorption thresholds and thus represent their optical bandgaps. The technique is employed to capture relative variations in optical bandgaps across various PSCs, and to resolve optical bandgap inhomogeneity within the same device due to material degradation and impurities. Degradation and impurities are found to both cause optical bandgap shifts inside the materials. The results are confirmed with micro-photoluminescence spectroscopy scans. The excellent agreement between the two techniques opens opportunities for this imaging concept to become a quantified, high spatial resolution, large-area characterization tool of PSCs. This development continues to strengthen the high value of luminescence imaging for the research and development of this photovoltaic technology.

14 SOLAR ENERGY↗

DOE OSTI2018

Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells

We report luminescence phenomena from doped polycrystalline silicon (poly-Si) films and their applications to study carrier transport properties in passivating-contact solar cells. Low-temperature luminescence spectra emitted from doped poly-Si layers are found to be very broad and stretched from the crystalline silicon (c-Si) luminescence peak to significantly lower energies. This suggests that these layers contain radiative defect levels whose energies are continuously distributed from the band edges to deep levels in the poly-Si bandgap. Moreover, photoinduced carriers inside poly-Si layers are found to be completely blocked by an ultrathin SiOx interlayer (~1.3 nm). This demonstrates that there is no free-carrier coupling from poly-Si layers in practical passivating-contact solar cells. Finally, we demonstrate that the same principle can be applied to study carrier transport properties in hydrogenated amorphous silicon films.

14 SOLAR ENERGY↗

DOE OSTI2017

Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron‐Scale Spatial Resolution Using Spectral Photoluminescence

Thin films deposited on crystalline silicon surfaces are critical components of many silicon‐based devices, including high‐efficiency photovoltaic cells. Knowledge of their optical and electronic properties is important in designing and fabricating efficient solar cells, especially as the device complexity increases and includes micron‐scale features. Here, a camera‐based photoluminescence (PL) technique is developed to image the thickness of specific passivating films on silicon wafers. The technique is entirely contactless and nondestructive, requires minimal sample preparation, and provides a large dynamic range in terms of field of view, with micron‐scale spatial resolution possible. It retains the advantages of PL imaging, a mainstream technique for photovoltaic material and device characterization, and it has some extra capabilities similar to those of ellipsometry. This newly developed technique is demonstrated on hydrogenated amorphous silicon and silicon nitride films, two important passivation technologies for high‐efficiency silicon solar cells.

Nguyen, Hieu T.↗

DOE OSTI2017

Quantification of Sheet Resistance in Boron-Diffused Silicon Using Micro-Photoluminescence Spectroscopy at Room Temperature

A micro-photoluminescence-based technique is presented, to quantify and map sheet resistances of boron-diffused layers in silicon solar cell precursors with micron-scale spatial resolution at room temperature. The technique utilizes bandgap narrowing effects in the heavily-doped layers, yielding a broader photoluminescence spectrum at the long-wavelength side compared to the spectrum emitted from lightly doped silicon. By choosing an appropriate spectral range as a metric to assess the doping density, the impacts of photon reabsorption on the analysis can be avoided; thus, an accurate characterization of the sheet resistance can be made. This metric is demonstrated to be better representative of the sheet resistance than the surface doping density or the total dopant concentration of the diffused layer. The technique is applied to quantify sheet resistances of 12-um-wide diffused fingers in interdigitated back-contact solar cell precursors and large diffused areas. The results are confirmed by both 4-point probe and time-of-flight secondary-ion mass spectrometry measurements. Lastly, the practical limitations associated with extending the proposed technique into an imaging mode are presented and explained.

14 SOLAR ENERGY↗

DOE OSTI2017

Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active sub-grain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) have distinctly different spatial distributions, and are asymmetric across the sub-grain boundaries. The presence of D1/D2 is correlated with a strong reduction in the band-to-band luminescence, indicating a higher recombination activity. In contrast, D3/D4 emissions are not strongly correlated with the band-to-band intensity. Based on spatially-resolved, synchrotron-based micro-X-ray fluorescence measurements of metal impurities, we confirm that high densities of metal impurities are present at locations with strong D1/D2 emission but low D3/D4 emission. Finally, we show that the observed asymmetry of the sub-band-gap luminescence across the sub-grain boundaries is due to their inclination below the wafer surface. Based on the luminescence asymmetries, the sub-grain boundaries are shown to share a common inclination locally, rather than be orientated randomly.

14 SOLAR ENERGY↗