Engineering topics

Nguyen, Tien T.

Publications and source records attributed to Nguyen, Tien T..

2 records

NASA NTRS2000

Electrostatic Discharge Induced in Packaging by Space Radiation

Radiation belts around Planets have sufficient high energy electron flux to penetrate spacecraft skins and statically charge insulators inside the electronic boxes. For example, geosynchronous-orbit Earth spacecraft require 100 mils aluminum shielding to sufficiently attenuate the fast electron flux. Electrons are stopped and accumulate slowly in the insulated materials to produce strong electric fields. Typically the field strength achieves a threshold for occasional spontaneous discharge in the insulating material. The field strength remains high yet pulsing is infrequent. Charge can leak off if the insulator is sufficiently leaky. The conductivity of insulators is usually controlled by mobile ions such as H and OH in ground service. In space the mobile ions are eventually out-gassed. The resistivity of several insulators is known to increase over three decades after exposure to vacuum for several months. Insulators in space were seen to pulse more frequently as they aged.

Frederickson, A. R.↗

NASA NTRS1989

Read disturb errors in a CMOS static RAM chip

Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.

Wood, Steven H.↗