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Nie, Wanyi

Publications and source records attributed to Nie, Wanyi.

17 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Perovskite Grown in Gallium Nitride Nanowire Matrix for Stable and High‐Efficiency X‐Ray Detection

High-quality quasi-2D perovskites in a GaN nano-wire matrix are grown to build a 3D hetero-structure for high-performance X-ray sensing. In the 3D hetero-structure, GaN nano-wire matrix serves as an n-type charge collector that can rapidly extract carriers through the bulk film of the perovskite layer. Together with a p-type top electrode, a p–i–n diode with the 3D hetero-structure is built, that exhibits a rectified current–voltage characteristic. After analyzing the interface energy alignment, it is found that the fermi levels of the perovskite and GaN are aligned in the dark, and a quasi-fermi level splits upon illumination, introducing a built-in electrical field at the interface. As a result, strong photo-induced current is observed from the diode without an external field. Finally, the 3D diode for X-ray detection demonstration is used, revealing a sensitivity of 308.9 µC Gy air -1 cm -2 at an exceptionally low applied field of 0.125 V µm -1 . The X-ray-induced signal from the 3D diode is stable after 155 cycles of X-ray irradiation under a constant electric field. This demonstration informs a new 3D architecture for high-performance X-ray sensing, and it shows that GaN is a robust n-type interface for perovskite optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Charged Hole‐Transporting Materials Based on Imidazolium for Defect Passivation in Inverted Perovskite Solar Cells

The hole‐transporting material (HTM) in perovskite solar cells (PSCs) provides an ideal interface with the perovskite layer for hole collection while influencing the perovskite crystalline structure and morphology. This article presents SIM and DIM, two new dopant‐free imidazolium‐based HTMs with charged units accompanied by counter ions that show the potential to function as ionic HTMs and ionic liquid additives and help improve the efficiency and stability of inverted PSCs. DIM‐based PSCs demonstrates exceptional performance with a high‐power conversion efficiency of 19.15%, attributed to improved passivation of perovskite interface defects. Furthermore, these new imidazolium salt‐based HTMs can be manufactured economically, making them a viable option for mass production and PSC commercialization.

Tingare, Yogesh S.↗
DOE OSTI2023

Halide Perovskites and Their Derivatives for Efficient, High‐Resolution Direct Radiation Detection: Design Strategies and Applications

Abstract The past decade has witnessed a rapid rise in the performance of optoelectronic devices based on lead‐halide perovskites (LHPs). The large mobility‐lifetime products and defect tolerance of these materials, essential for optoelectronics, also make them well‐suited for radiation detectors, especially given the heavy elements present, which is essential for strong X‐ray and γ‐ray attenuation. Over the past decade, LHP thick films, wafers, and single crystals have given rise to direct radiation detectors that have outperformed incumbent technologies in terms of sensitivity (reported values up to 3.5 × 10 6 µC Gy air −1 cm −2 ), limit of detection (directly measured values down to 1.5 nGy air s −1 ), along with competitive energy and imaging resolution at room temperature. At the same time, lead‐free perovskite‐inspired materials (e.g., methylammonium bismuth iodide), which have underperformed in solar cells, have recently matched and, in some areas (e.g., in polarization stability), surpassed the performance of LHP detectors. These advances open up opportunities to achieve devices for safer medical imaging, as well as more effective non‐invasive analysis for security, nuclear safety, or product inspection applications. Herein, the principles behind the rapid rises in performance of LHP and perovskite‐inspired material detectors, and how their properties and performance link with critical applications in non‐invasive diagnostics are discussed. The key strategies to engineer the performance of these materials, and the important challenges to overcome to commercialize these new technologies are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Mechanistic origins of excitonic properties in 2D perovskites: Implications for exciton engineering

As the field of 2D halide perovskites (HPs) matures, state-of-the-art techniques to measure important properties, such as the band gap (E g ) and exciton binding energy (E b ), continue to produce inconsistent values. Here, we tackle this long-standing problem by obtaining direct measurements of E g and E b for 31 unique HP structures. The E b values are lower than in previous literature reports and lower than expected from standard theory that assumes excitons are screened by optical-frequency dielectric constants. These low E b values are shown to be a consequence of unique screening effects, such as superlattice screening and phonon screening. Here, we find a strikingly strong correlation between E b and E g and provide design principles to a priori tune E g and E b to their optimal values. As such, this work offers a blueprint for E g -E b engineering of low-dimensional semiconductors as an even more useful replacement for simply band-gap engineering.

14 SOLAR ENERGY↗
DOE OSTI2023

Perovskite Solar Module: Promise and Challenges in Efficiency, Meta‐Stability, and Operational Lifetime

Abstract Perovskite photovoltaics (PVs) are an emerging solar energy generation technology that is nearing commercialization. Despite the unprecedented progress in increasing power conversion efficiency (PCE) for perovskite solar cells (PSCs), up‐scaling lab‐made cells to solar modules remains a challenge. In this work, the recent progress of making perovskite mini‐modules is reviewed. In particular, a database summarizing the module size, performance, hysteresis, and operational lifetimes reported in the literature is built. After analyzing the performance losses from scaling PSCs to mini‐modules based on the data collected from the literature, the current key to high‐performance perovskite mini‐modules is found to be the coating method optimization. If the perovskite layer quality is well reserved, a >24% mini‐module efficiency is projected by only considering the losses from lateral resistivity and laser scribing area. Next, performance characteristics are explored including hysteresis and meta‐stable power outputs that must be overcome to correctly characterize perovskite modules. Finally, current challenges associated with the long‐term stability of perovskite modules are examined and the importance of such durability for commercialization is discussed. It is hoped that the findings in this review provide a bridge for the development of perovskite modules that will lead to commercialization in the near future.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Quantum Efficiency Gain in 2D Perovskite Photo and X‐Ray Detectors

Abstract The perovskite polycrystalline thin film detector fabricated by solution method is a promising low‐cost, scalable technology for radiation imaging, but its thin volume limits the sensing efficiency for high‐energy X‐ray photons. This work reports 2D perovskite thin film photo‐diodes with a detection gain when sensing visible and X‐ray photons. Detailed power and temperature‐dependent device characterizations reveal a charge multiplication effect to be responsible for the observed high gain. This is caused by a disparity in electron and hole transport, where electron transport is retarded by a trap/de‐trap process via shallow trap states, whereas the hole transport is fast enough to produce a photoconductive gain in satisfying the charge neutrality. The 2D perovskite made with butylamine spacers is also found to exhibit a larger efficiency gain than those made with phenylethylamines because of the higher likelihood of forming shallow traps in the former. The thin film diodes feature a high temporal response over 1 MHz due to the fast charge collection across a thin volume, and the discovery provides device physics mechanisms in connection to material structure‐function relationship for future optoelectronics design that can boost the efficiency of X‐ray sensing and dim light detection.

2D perovskites↗
DOE OSTI2023

Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes

A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.

Tsai, Hsinhan↗
DOE OSTI2023

Intersubband Transitions in Lead Halide Perovskite-Based Quantum Wells for Mid-Infrared Detectors

Due to their excellent optical and electrical properties as well as versatile growth and fabrication processes, lead halide perovskites have been widely considered as promising candidates for green energy and applications related to optoelectronics. Here, we investigate their potential applications at infrared wavelengths by modeling the intersubband transitions in perovskite-based quantum well systems. Both single-well and double-well structures are studied, and their energy levels as well as the corresponding wave functions and intersubband transition energies are calculated by solving the one-dimensional Schrödinger equations. Via adjustment of the quantum well and barrier thicknesses, the intersubband transition energies can be tuned to cover a broad infrared wavelength range. We also find that the lead halide perovskite-based quantum wells possess high absorption coefficients. In conclusion, the widely tunable transition energies and high absorption coefficients of the perovskite-based quantum well systems, combined with their unique material and electrical properties, may enable an alternative material system for infrared photodetector applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Low-temperature liquid-phase formation of environmentally stable copper halide nanocrystal superlattices and their application to anticounterfeiting patterns

Nanocrystal superlattices have the potential to create a new class of semiconductor materials by combining the photophysical properties of individual nanocrystals with bulk-like structure performance. However, the principles underlying the direct formation of superlattices in liquid phase have not been thoroughly investigated, particularly, those consisting of exciton self-trapping metal halides. Here, in this work, we explore the formation of Cs 3 Cu 2 Br 5 nanocrystal superlattices via liquid-phase crystallization of growing nanocrystals over a reaction period of only a few seconds. Importantly, the reaction temperature and the precursor concentration were found to be key parameters governing the concomitant nanocrystal growth and superlattice formation. The resulting Cs 3 Cu 2 Br 5 superlattices had a well-defined face-centered cubic structure and emitted a single-band bright blue emission when exposed to 280 nm light. Owing to their advantages, such as low toxicity, reabsorption-free, narrow absorption, strong emission, and high environmental stability, the Cs 3 Cu 2 Br 5 superlattices were applicable to anti-counterfeiting applications. Our findings shed light on the liquid-phase assembly of nanocrystals into superlattices and highlight the potential applications of the superlattices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

An Interface–Type Memristive Device for Artificial Synapse and Neuromorphic Computing

Interface-type (IT) metal/oxide Schottky memristive devices have attracted considerable attention over filament-type (FT) devices for neuromorphic computing because of their uniform, filament-free, and analog resistive switching (RS) characteristics. The most recent IT devices are based on oxygen ions and vacancies movement to alter interfacial Schottky barrier parameters and thereby control RS properties. However, the reliability and stability of these devices have been significantly affected by the undesired diffusion of ionic species. Herein, a reliable interface-dominated memristive device is demonstrated using a simple Au/Nb-doped SrTiO 3 (Nb:STO) Schottky structure. The Au/Nb:STO Schottky barrier modulation by charge trapping and detrapping is responsible for the analog resistive switching characteristics. Because of its interface-controlled RS, the proposed device shows low device-to-device, cell-to-cell, and cycle-to-cycle variability while maintaining high repeatability and stability during endurance and retention tests. Furthermore, the Au/Nb:STO IT memristive device exhibits versatile synaptic functions with an excellent uniformity, programmability, and reliability. A simulated artificial neural network with Au/Nb:STO synapses achieves a high recognition accuracy of 94.72% for large digit recognition from MNIST database. These results suggest that IT resistive switching can be potentially used for artificial synapses to build next-generation neuromorphic computing.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS 3 Films

The prototypical chalcogenide perovskite, BaZrS 3 (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow BaZrS 3 films have been limited mainly to physical vapor deposition techniques. Here, we report the fabrication of BZS thin films via a facile aqueous solution route of polymer-assisted deposition (PAD), where the polymer-chelated cation precursor films were sulfurized in a mixed CS 2 and Ar atmosphere. The formation of a single-phase polycrystalline BZS thin film at a processing temperature of 900 °C was confirmed by X-ray diffraction and Raman spectroscopy. The stoichiometry of the films was verified by Rutherford Backscattering spectrometry and energy-dispersive X-ray spectroscopy. The BZS films showed a photoluminescence peak at around 1.8 eV and exhibited a photogenerated current under light illumination at a wavelength of 530 nm. Temperature-dependent resistivity analysis revealed that the conduction of BaZrS 3 films under the dark condition could be described by the Efros–Shklovskii variable range hopping model in the temperature range of 60–300 K, with an activation energy of about 44 meV.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A perspective on the device physics of lead halide perovskite semiconducting detector for gamma and x-ray sensing

Metal-halide perovskites are emerging materials for radiation sensing featuring high absorption cross section, high charge mobility, and long carrier lifetime enabling superior detection efficiencies even at room temperature. Perovskite detector technologies are more complex involving different detecting modes and device architectures. Here, to elucidate the working principles, we provide a Perspective on the device structures and the operational principles of halide perovskite direct conversion detectors for radiation sensing. We will first discuss different detection modes and introduce the commonly used device architectures and their working principles. Based on our work and pioneer developments in the field, we will next compare the performances of the reported detectors. Additionally, we will summarize the single crystal detectors and polycrystalline thin film devices and discuss their advantages and disadvantages for different applications. Finally, we provide a future Perspective on the critical problems that must be addressed to commercialize this technology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Long carrier diffusion length in two-dimensional lead halide perovskite single crystals

Ruddlesden-Popper (RP) perovskites are two-dimensional semiconductors for high-performance optoelectronic devices. In this work, we report a long in-plane carrier diffusion length in 2D RP perovskite single crystals probed by scanning photocurrent microscopy. Carrier diffusion lengths of 7–14μm are observed when the number of PbI 6 –2 octahedra between organic spacers increases from 1 to 3. Using detailed light intensity and electric-field-dependent photocurrent measurements, we attribute the observed long diffusion length to the dominating dissociated free carrier transport. This is further validated by time-resolved photoluminescence measurements, where the decay lifetime increases in the presence of an electric field. From our experiments, we conclude that the in-plane transport in RP perovskites is efficient because of the partial free carrier generation, which overcomes strong excitonic effects. In conclusion, our results suggest that semiconducting devices fabricated from RP perovskite single crystals can be as efficient as their 3D counterparts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗