Search NASA⌕ Search

Engineering topics

Nikolka, Mark

Publications and source records attributed to Nikolka, Mark.

The Effect of Ring Expansion in Thienobenzo[ b ]indacenodithiophene Polymers for Organic Field-Effect Transistors

A fused donor, thienobenzo[b]indacenodithiophene (TBIDT), was designed and synthesized using a novel acid-promoted cascade ring closure strategy, and then copolymerized with a benzothiadiazole (BT) monomer. The backbone of TBIDT is an expansion of the well-known indacenodithiophene (IDT) unit and was expected to enhance the charge carrier mobility by improving backbone planarity and facilitating short contacts between polymer chains. However, the optimized field-effect transistors demonstrated an average saturation hole mobility of 0.9 cm 2 V -1 s -1 , lower than the performance of IDT-BT (~1.5 cm 2 V -1 s -1 ). Mobilities extracted from time-resolved microwave conductivity measurements were consistent with the trend in hole mobilities in organic field-effect transistor devices. Scanning tunneling microscopy measurements and computational modeling illustrated that TBIDT-BT exhibits a less ordered microstructure in comparison to IDT-BT. This reveals that a regular side-chain packing density, independent of conformational isomers, is critical to avoid local free volume due to irregular packing, which can host trapping impurities. DFT calculations indicated that TBIDT-BT, despite containing a larger, planar unit, showed less stabilization of planar backbone geometries in comparison to IDT-BT. This is due to the reduced electrostatic stabilizing interactions between the peripheral thiophene of the fused core and the BT unit, resulting in a reduction of the barrier to rotation around the single bond. Finally, these insights provide a greater understanding of the general structure-property relationships required for semiconducting polymer repeat units to ensure optimal backbone planarization, as illustrated with IDT-type units, guiding the design of novel semiconducting polymers with extended fused backbones for high-performance field-effect transistors.

36 MATERIALS SCIENCE↗

An Intrinsically Stretchable High-Performance Polymer Semiconductor with Low Crystallinity

For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large-area and high-density devices. A prime challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. Although crystalline domains are generally needed to achieve high mobility, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high-performance donor–acceptor polymers that exhibit low degrees of energetic disorder, while having a high fraction of amorphous domains, appear promising for polymer semiconductors. Here, a low crystalline, i.e., near-amorphous, indacenodithiophene-co-benzothiadiazole (IDTBT) polymer and a semicrystalline thieno[3,2-b]thiophene-diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under strain. It is observed that IDTBT is able to achieve both a high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer and observed mobility ≈0.6 cm 2 V -1 s -1 at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV-vis and grazing-incidence X-ray diffraction to elucidate the molecular origins of high ductility. In summary, the near-amorphous IDTBT polymer signifies a promising direction regarding molecular design principles toward intrinsically stretchable high-performance polymer semiconductor.

36 MATERIALS SCIENCE↗