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Ning, Cun-Zheng

Publications and source records attributed to Ning, Cun-Zheng.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Ten years of spasers and plasmonic nanolasers

Ten years ago, three teams experimentally demonstrated the first spasers, or plasmonic nanolasers, after the spaser concept was first proposed theoretically in 2003. An overview of the significant progress achieved over the last 10 years is presented here, together with the original context of and motivations for this research. After a general introduction, we first summarize the fundamental properties of spasers and discuss the major motivations that led to the first demonstrations of spasers and nanolasers. This is followed by an overview of crucial technological progress, including lasing threshold reduction, dynamic modulation, room-temperature operation, electrical injection, the control and improvement of spasers, the array operation of spasers, and selected applications of single-particle spasers. Research prospects are presented in relation to several directions of development, including further miniaturization, the relationship with Bose–Einstein condensation, novel spaser-based interconnects, and other features of spasers and plasmonic lasers that have yet to be realized or challenges that are still to be overcome.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films

To reduce the cost of III–V solar cells, a buffer-layer free method of depositing high-quality III–V thin films onto low-cost silicon nanostructured substrates is proposed that is enabled by stress relaxation due to the nanopore morphology of the silicon substrate. As a proof-of-concept test of the proposed method, the nanoheteroepitaxial deposition of high quality InP thin film is examined. By comparing the deposition of InP (under conditions optimized for InP deposition onto InP substrates) onto nanostructured Si(100) substrates with nanopore and nanopillar morphologies, the morphology of nanopores is found to be preferred for the nanoheteroepitaxial deposition of InP films.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Nanowires for Photonics

All-photonic integrated circuits are promising platforms for future systems beyond the limitation of Moore's law. Over the last several decades, one-dimensional (1D) nanowires have demonstrated great potential in photonic circuitry because of their unique 1D structure to effectively generate and tightly confine optical signals as well as easily tunable optical properties. In this Review, we categorize nanowires based on the optical properties (i.e., semiconducting, metallic, and dielectric nanowires) for their potential photonic applications (as light emitters or plasmonic and photonic waveguides). We further discuss the recent efforts in integration of nanowire-based photonic elements toward next-generation optical information processors. However, there are still several challenges remaining before the nanowires are fully utilized as photonic building blocks. In conclusion, the scientific and technical challenges and outlooks are provided to indicate the future directions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

High-Quality Indium Phosphide Films and Nano-Network Grown Using Low-Cost Metal-Catalyzed Vapor-Liquid-Solid Method for Photovoltaic Applications

Growth of high-quality InP film is demonstrated by directly co-evaporating elemental In and P in a simple low-cost chemical vapor deposition (CVD) reactor. By exploring the interplay between the metal-assisted vapor–liquid–solid and vapor–solid mechanisms, the authors present the growth of highly stoichiometric InP thin films or nano-network in a wide range of growth temperature from 560 to 720 °C. Photoluminescence (PL) measurements reveal high optical quality of the as-grown InP film with PL bandwidth (≈49 meV) comparable to commercial InP wafer (≈41 meV). The versatility of this approach is demonstrated through successful growth of thin films on diverse substrates such as silicon, InP, and fused quartz. Additionally, the effects of catalysts are also studied by comparing growths based on Au-catalyst with In-self-catalyst (without Au). The temperature dependence study of Au-catalyzed growth shows that higher growth temperature results in formation of larger grain sizes and continuous void-free polycrystalline InP films. Preliminary solar cell devices are fabricated on a p-type silicon with an indium-tin-oxide contact layer. It is believed that the new growth strategy provides a simpler, lower cost (both precursors and substrates) approach for producing high-quality InP thin film for the fabrication of high efficiency, low-cost solar cells.

36 MATERIALS SCIENCE↗
NASA NTRS2007

Conversion of type of quantum well structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗
NASA NTRS2007

Conversion of Type of Quantum Well Structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗
NASA NTRS2003

Many-Body Effects and Lineshape of Intersubband Transitions in Semiconductor Quantum Wells

Intersubband Transition (ISBT) infrared (IR) absorption and PL in InAs/AlSb were studied for narrow Quantum Wells (QWs). A large redshift was observed (7-10 meV) as temperature increased. A comprehensive many-body theory was developed for ISBTs including contributions of c-c and c-phonon scatterings. Many-body effects were studied systematically for ISBTs. Redshift and linewidth dependence on temperature, as well as spectral features were well explained by theory.

Ning, Cun-Zheng↗
NASA NTRS2003

Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

Li, Jian-Zhong↗
NASA NTRS2003

Spurious States-Free Solution of the k dot p Hamiltonian for Heterostructures

A method for eliminating spurious solution in the k dot p Hamiltonian has been proposed. Introduction of additional off-diagonal alpha k(exp 2) term converts spurious solution with large real wave vector to evanescent solution with large imaginary wave vector. This modification keeps the same effective masses at Gamma point and introduces negligible deviation from original nonparabolicity. A set of unphysical fast oscillation eigenfunctions in confined states of heterostructures are removed.

Kolokolov, Konstantin I.↗
NASA NTRS2003

Collective Excitations in InAs Well Intersubband Transitions

Intersubband transitions in semiconductor quantum well are studied using a density matrix theory that goes beyond the Hartree-Fock approximation by including the full second order electron-electron scattering terms in the polarization equation for the first time. Even though the spectral features remain qualitatively similar to the results obtained with dephasing rate approximation, significant quantitative changes result from such a more detailed treatment of dephasing. More specifically, we show how the interplay of the two fundamental collective excitations, the Fermi-edge singularity and the intersubband plasmon, leads to significant changes in lineshape as the electron density varies.

Li, Jian-Zhong↗
NASA NTRS2003

Microscopic Modeling of Intersubband Resonances in InAs/AlSb Quantum Wells

Linear absorption spectra from intersubband resonance in InAs/AlSb quantum wells are analyzed theoretically using the intersubband semiconductor Bloch equation approach. Our model goes beyond the Hartree-Fock approximation and treats particle-particle correlations under the second Born approximation. Electron-electron and -LO phonon scatterings from such a treatment describe intrinsic line broadening to the intersubband resonance. Electron subbands are determined self-consistently with a spurious-state-free 8-band k.p Hamiltonian under the envelope function approximation. To compare with experimental measurements, we also included line broadening due to electron-interface roughness scattering. Excellent agreement was achieved for temperature-dependent absorption spectra in the mid-infrared frequency range, after taking into careful account the interplay of material parameters, nonparabolicity in bandstructure, and many-body effects.

Li, Jian-Zhong↗
NASA NTRS2003

Many-Body Effects in Quantum-Well Intersubband Transitions

Intersubband polarization couples to collective excitations of the interacting electron gas confined in a semiconductor quantum well (Qw) structure. Such excitations include correlated pair excitations (repellons) and intersubband plasmons (ISPs). The oscillator strength of intersubband transitions (ISBTs) strongly varies with QW parameters and electron density because of this coupling. We have developed a set of kinetic equations, termed the intersubband semiconductor Bloch equations (ISBEs), from density matrix theory with the Hartree-Fock approximation, that enables a consistent description of these many-body effects. Using the ISBEs for a two-conduction-subband model, various many-body effects in intersubband transitions are studied in this work. We find interesting spectral changes of intersubband absorption coefficient due to interplay of the Fermi-edge singularity, subband renormalization, intersubband plasmon oscillation, and nonparabolicity of bandstructure. Our results uncover a new perspective for ISBTs and indicate the necessity of proper many-body theoretical treatment in order for modeling and prediction of ISBT line shape.

Li, Jian-Zhong↗
NASA NTRS2002

Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers

A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field. The equations derived above are implemented in various limiting cases to a typical diode laser to study the consequences of nonlinear diffusion and the cross diffusion terms on laser behavior, especially the dynamic behavior of a diode laser under modulation. Detailed results will be presented by comparing with the standard rate equation results.

Li, J.↗
NASA NTRS2002

Many-body Effects in a Laterally Inhomogeneous Semiconductor Quantum Well

Many body effects on conduction and diffusion of electrons and holes in a semiconductor quantum well are studied using a microscopic theory. The roles played by the screened Hartree-Fock (SHE) terms and the scattering terms are examined. It is found that the electron and hole conductivities depend only on the scattering terms, while the two-component electron-hole diffusion coefficients depend on both the SHE part and the scattering part. We show that, in the limit of the ambipolax diffusion approximation, however, the diffusion coefficients for carrier density and temperature are independent of electron-hole scattering. In particular, we found that the SHE terms lead to a reduction of density-diffusion coefficients and an increase in temperature-diffusion coefficients. Such a reduction or increase is explained in terms of a density-and temperature dependent energy landscape created by the bandgap renormalization.

Ning, Cun-Zheng↗
NASA NTRS2002

Ultrafast Narrow Band Modulation of VCSELs

Multimode beating was greatly enhanced by taking output from part (e.g., half) of the output facet. Simpler sources of microwaves and millimeter waves of various frequencies were generated by varying the VCSEL diameter in a single multimode VCSEL our coupling of a few VCSELs. Breathing frequency in multi-mode operations affects modulation response and bandwidth. Optimizing RO frequency and mode beating frequency could potentially expand bandwidths suitable for wide band digital communications.

Ning, Cun-Zheng↗