Engineering topics

Nishino, S.

Publications and source records attributed to Nishino, S..

3 records

DOE OSTI2019

Analysis of the Beaufort Gyre Freshwater Content in 2003–2018

Abstract Hydrographic data collected from research cruises, bottom‐anchored moorings, drifting Ice‐Tethered Profilers, and satellite altimetry in the Beaufort Gyre region of the Arctic Ocean document an increase of more than 6,400 km 3 of liquid freshwater content from 2003 to 2018: a 40% growth relative to the climatology of the 1970s. This fresh water accumulation is shown to result from persistent anticyclonic atmospheric wind forcing (1997–2018) accompanied by sea ice melt, a wind‐forced redirection of Mackenzie River discharge from predominantly eastward to westward flow, and a contribution of low salinity waters of Pacific Ocean origin via Bering Strait. Despite significant uncertainties in the different observations, this study has demonstrated the synergistic value of having multiple diverse datasets to obtain a more comprehensive understanding of Beaufort Gyre freshwater content variability. For example, Beaufort Gyre Observational System (BGOS) surveys clearly show the interannual increase in freshwater content, but without satellite or Ice‐Tethered Profiler measurements, it is not possible to resolve the seasonal cycle of freshwater content, which in fact is larger than the year‐to‐year variability, or the more subtle interannual variations.

Arctic Ocean↗

NASA NTRS1985

Making Cubic Silicon Carbide Semiconductors

Thin buffer layer of SiC minimizes effects of lattice mismatch. Approach consists of growing single-crystal layer of cubic SiC on single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Process developed for production of large-area single-crystal wafers of cubic silicon carbide (SiC) for semiconductor devices; also used to make devices themselves. Applications include electronics for high temperature (up to 900 C) and electronics for very high frequencies.

Powell, J.↗

NASA NTRS1983

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.

Nishino, S.↗