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Noda, Takeshi

Publications and source records attributed to Noda, Takeshi.

Crystal Structure of Marburg Virus VP40 Reveals a Broad, Basic Patch for Matrix Assembly and a Requirement of the N-Terminal Domain for Immunosuppression

Marburg virus (MARV), a member of the filovirus family, causes severe hemorrhagic fever with up to 90% lethality. MARV matrix protein VP40 is essential for assembly and release of newly copied viruses and also suppresses immune signaling in the infected cell. Here we report the crystal structure of MARV VP40. We found that MARV VP40 forms a dimer in solution, mediated by N-terminal domains, and that formation of this dimer is essential for budding of virus-like particles. We also found the N-terminal domain to be necessary and sufficient for immune antagonism. The C-terminal domains of MARV VP40 are dispensable for immunosuppression but are required for virus assembly. The C-terminal domains are only 16% identical to those of Ebola virus, differ in structure from those of Ebola virus, and form a distinct broad and flat cationic surface that likely interacts with the cell membrane during virus assembly. Marburg virus, a cousin of Ebola virus, causes severe hemorrhagic fever, with up to 90% lethality seen in recent outbreaks. Molecular structures and visual images of the proteins of Marburg virus are essential for the development of antiviral drugs. One key protein in the Marburg virus life cycle is VP40, which both assembles the virus and suppresses the immune system. Furthermore, we provide the molecular structure of Marburg virus VP40, illustrate differences from VP40 of Ebola virus, and reveal surfaces by which Marburg VP40 assembles progeny and suppresses immune function.

59 BASIC BIOLOGICAL SCIENCES↗

Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination

We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Recent developments in droplet epitaxy

The droplet epitaxy allows for self-assembly of lattice-matched GaAs quantum dots (QDs) with high quality and high uniformity. In this article, we show our efforts to realize the GaAs QDs with excellent optical properties. After the optimization of the several growth processes, we achieved current-injection lasing in the GaAs QDs. In addition, formation of further advanced nanostructure is presented.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen δ-doping technique

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen δ-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen δ-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C{sub 3v} symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks.

36 MATERIALS SCIENCE↗

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

36 MATERIALS SCIENCE↗